BTB/BTA41 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-247AD Dim. G T2 T1 T2 G T1 Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I²t dI/dt Parameter PG(AV) Tstg Tj Unit RMS on-state current (full sine wave) TO-247AD Tc = 80 °C 41 A Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz F = 50 Hz t = 16.7 ms t = 20 ms 420 400 A 880 A²s I²t Value for fusing Critical rate of rise of on-state current _ 100 ns I G = 2 x I GT , tr < tp = 10 ms F = 120 Hz Tj = 125°C 50 A/µs tp = 10 ms Tj = 25°C VDRM/VRRM V tp = 20 µs Tj = 125°C 8 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C VDSM/V RSM Non repetitive surge peak off-state voltage IGM Value Peak gate current Average gate p ower diss ipation + 100 Storage junction temperature range Operating junction temperature range ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Test Conditions Quadrant IGT (1) VGT VD = 12 V VGD VD = VDRM IH (2) IT = 500 mA IL IG = 1.2 IGT RL = 33 Ω RL = 3.3 kΩ MAX. 50 100 mA ALL MAX. 1.3 V ALL MIN. 0.2 V MAX. 80 mA MAX. 70 mA Tj = 125°C I- III-IV VD = 67 % VDRM gate open Tj = 125°C (dI/dt)c (2) Without snubber Unit I - II - III IV II dV/dt (2) Value Tj = 125°C 160 MIN. MIN. 500 10 V/µs A/ms BTB/BTA41 Discrete Triacs(Non-Isolated/Isolated) STATIC CHARACTERISTICS Symbol Test Conditions VTM (2) ITM = 60 A Vto (2) tp = 380 µs Value Unit Tj = 25°C MAX. 1.55 V Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 10 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 5 mA IRRM Tj = 125°C MAX. Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 0.6 °C/W Rth(j-a) Junction to ambient 50 °C/W PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Type Package 50 mA Standard TO-247AD Weight Base quantity Packing mode 4.5 g 120 Bulk 200 V ~~ 1000 V BTB/BTA41 X X OTHER INFORMATION Part Number BTB/BTA41 Marking BTB/BTA41 BTB/BTA41 Discrete Triacs(Non-Isolated/Isolated) F ig. 1: Maximum power dis s ipation vers us R MS on-s ta te current (full cycle). 50 P (W) 40 30 20 180° α α 10 IT (R MS ) (A ) 0 0 5 10 15 20 25 30 35 40 F ig. 3: R elative variation of thermal impeda nce versus pulse duration. 1.E +00 F ig. 2: R MS on-state current vers us cas e temperature (full cycle). 45 40 35 30 25 20 15 10 5 0 IT (R MS ) (A ) B TA 41 T c (° C ) 0 25 F ig. 4: values ). K =[Zth/R th] 400 Zth(j-c) α = 180° B T B 41 50 On-s tate 75 100 cha racteris tics 125 (maximum IT M (A ) T j max 100 1.E -01 Zth(j-a) B TA/B T B 41 tp (s ) 1.E -03 1.E -03 1.E -02 1.E -01 1.E +00 1.E +01 1.E +02 1.E +03 F ig. 5: S urge peak on-s tate current vers us number of cycles . 450 400 350 300 250 200 150 100 50 0 T j=25°C 10 1.E -02 IT S M (A ) T j max.: V to = 0.85 V R d = 10 mΩ V T M (V ) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 F ig. 6: Non-repetitive s urge pea k on-s tate current for a s inus oidal puls e with width tp < 10 ms, and corresponding value of I²t. 10000 IT S M (A ), I² t (A ² s ) IT S M t=20ms One cycle Non repetitive T j initial=25°C 1000 dI/dt limitation: 50A /µs I²t R epetitive T c=70°C tp (ms ) Number of cycles 1 10 100 1000 100 0.01 0.10 T j initial=25°C 1.00 10.00 BTB/BTA41 Discrete Triacs(Non-Isolated/Isolated) F ig. 7: R elative varia tion of gate trigger current, holding current and latching current vers us junction temperature (typical values). 2.5 IG T,IH,IL [T j] / IG T,IH,IL [T j=25° C ] (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c 2.0 1.8 2.0 1.6 IG T 1.4 1.5 1.0 1.2 IH & IL 1.0 0.8 0.5 0.6 T j(° C ) 0.0 -40 -20 0 20 40 60 80 100 120 140 F ig. 9: R elative varia tion of critical rate of decreas e of main current vers us junction temperature. (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] 6 5 4 3 2 1 0 T j (° C ) 0 F ig. 8: R ela tive variation of critica l rate of decreas e of main current vers us (dV /dt)c (typica l values ). 25 50 75 100 125 0.4 0.1 (dV /dt)c (V /µs ) 1.0 10.0 100.0