Pb Free Product NCE20G120T http://www.ncepower.com NCE20G120T 1200V, 20A, Trench NPT IGBT Features Trench NPT( Non Punch Through) IGBT High speed switching Low saturation voltage: VCE(sat)=2.0V@IC=20A High input impedance z z z z G Applications Inductive heating, Microwave oven, Inverter, UPS, etc. Soft switching applications z z C E C General Description Using advanced Trench NPT technology, NCE’s 1200V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. G E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 1200 V VGES Gate to Emitter Voltage +/-25 V IC ICM(1) PD Continuous Collector Current @TC=25°C 40 A Continuous Collector Current @TC=100°C 20 A 60 A Pulsed Collector Current Maximum Power Dissipation @TC=25°C 298 W Maximum Power Dissipation @TC=100°C 119 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5seconds 300 °C Notes: 1. Repetitive rating, Pulse width limited by max. junction temperature 共 8 页，第 1 页 Pb Free Product NCE20G120T http://www.ncepower.com Thermal Characteristics Symbol Parameter Typ. Max. Units RƟJC Thermal Resistance, Junction to Case - 0.42 °C/W RJA Thermal Resistance, Junction to Ambient - 40 °C/W Electrical Characteristics of the IGBT TC=25°C Symbol Parameter Off Characteristics Test Conditions Min. Typ. Max. Units BVCES Collector to Emitter Breakdown Voltage VGE=0V, Ic=1mA 1200 - - V ICES Collector Cut-Off Current VCE=VCES, VGE=0V - - 1 mA IGES G-E Leakage Current VGE=VGES, VCE=0V - - +/-250 nA - 7.0 V On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC=20mA, VCE=VGE 4.0 IC=20A, VGE=15V TC=25°C - 2 2.5 V IC=20A, VGE=15V TC=125°C - 2.15 - V Dynamic Characteristics Cies Input Capacitance - 3080 - pF Coes Output Capacitance - 95 - pF Cres Reverse Transfer Capacitance - 60 - pF VCE=30V, VGE=0V, f=1MHz Switching Characteristics td(on) Turn-On Delay Time - 30 - ns tr Rise Time - 79 - ns td(off) Turn-Off Delay Time - 143 - ns tf Fall Time - 217 320 ns Eon Turn-On Switching Loss - 0.42 - mJ Eoff Turn-Off Switching Loss - 0.71 1.05 mJ Ets Total Switching Loss - 1.13 - mJ td(on) Turn-On Delay Time - 29 - ns tr Rise Time - 93 - ns td(off) Turn-Off Delay Time - 147 - ns tf Fall Time - 259 - ns Eon Turn-On Switching Loss - 0.47 - mJ Eoff Turn-Off Switching Loss - 0.86 - mJ Ets Total Switching Loss - 1.33 - mJ Qg Total Gate Charge - 137 - nC Qge Gate to Emitter Charge - 23 - nC Qgc Gate to Collector Charge - 65 - nC VCC=600V,IC=20A, RG=10Ώ,VGE=15V, Resistive Load, TC=25°C VCC=600V,IC=20A, RG=10Ώ,VGE=15V, Resistive Load, TC=125°C VCC=600V,IC=20A, VGE=15V 共 8 页，第 2 页 Pb Free Product NCE20G120T http://www.ncepower.com Typical Performance Characteristics Figure 2. Typical Saturation Voltage Characteristics Collector Current, IC(A) Collector Current IC, (A) Figure 1. Typical Output Characteristics Collector Emitter Voltage, VCE(V) Collector Emitter Voltage, VCE(V) Figure 4. Saturation Voltage vs. VGE Collector Emitter Voltage, IC(V) Collector Emitter Voltage, IC(V) Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level Case temperature, Tc(°C) Figure 6. Capacitance Characteristics Capacitance (pF) Collector Emitter Voltage, IC(V) Figure 5. Saturation Voltage vs. VGE Gate Emitter Voltage, VGE( V) Gate Emitter Voltage, VGE( V) Collector Emitter Voltage, VCE(V) 共 8 页，第 3 页 Pb Free Product NCE20G120T http://www.ncepower.com Typical Performance Characteristics (Continued) Figure 9. Turn-off Characteristics vs. Gate Resistance Switching Time (ns) Switching Time (ns) Figure 8. Turn-on Characteristics vs. Gate Resistance Gate Resistance, RG (Ω) Gate Resistance, RG (Ω) Figure 11. Turn-on Characteristics vs. Collector Current Switching Loss (mJ) Switching Loss (mJ) Figure 10. Switching Loss vs. Gate Resistance Collector Current, IC (A) Gate Resistance, RG (Ω) Figure 13. Switching Loss vs. Collector Current Switching Loss (mJ) Switching Loss (mJ) Figure 12. Turn-Off Characteristics vs. Collector Current Collector Current, IC (A) Collector Current, IC (A) 共 8 页，第 4 页 Pb Free Product NCE20G120T http://www.ncepower.com Typical Performance Characteristics (Continued) Figure 15. SOA Characteristics Collector Current, IC(A) Gate-Emitter Voltage (V) Figure14. Gate Charge Characteristics Gate Charge, Qg (nC) Collector Emitter Voltage, (V) Collector Current, IC(A) Figure 16. Turn-Off SOA Collector Emitter Voltage, (V) Figure 17. Transient Thermal Impedance of IGBT 共 8 页，第 5 页 Pb Free Product http://www.ncepower.com NCE20G120T Mechanical Dimensions (continued) TO-247 共 8 页，第 6 页 Pb Free Product http://www.ncepower.com NCE20G120T 注意: ■新洁能产品说明书中所描述的信息，在没有特殊声明的条件下，不可使用在要求高可靠性的电路中。 例如人体供能系统，航天控制系统或其他应用中。在这种高可靠性应用下，可能会导致严重的物理或 者材料的损坏。当设计电路中用到新洁能的产品时，请就近咨询代理商。 ■新洁能对客户在超出说明书中提到的额定值使用产品所造成的损失不承担任何责任，即使是瞬间的使 用（例如最大额定值，工作环境范围或 其他参数） 。 ■新洁能对所有产品在单独应用的情况下保证它的性能﹑典型应用和功能符合说明书中的条件。当使用 在客户的产品和设备中，以上条件我们不做保证。为了了解产品在单独使用下无法估测的情况，新洁 能建议客户在使用过程中，必须不断的评估和反复的测试实际应用在产品和设备中的问题。 ■新洁能一直在努力为客户提供高质量，高可靠性的产品。但是，所有的半导体产品都有一定的失效概 率，这些失效概率可能会导致一些事故的发生，危及人的生命，也可能导致产生浓烟或者大火，招致 财产受到损失。当你在设计产品时，必须采用安全指标，这样可以避免事故的发生。这些措施不仅仅 是为了保护电路，电路错误预防所做的安全的设计，多余的设计和结构的设计。 ■新洁能的所有产品（包括技术参数和服务）受到当地出口法规的控制，这种产品在没有得到有关部门 的同意是不允许出口。 ■没有新洁能预先的许可，这些出版物不能以任何的形式或方式重印或传送，包括影印和记录，或任何 信息存储和检索系统。 ■在文中所列的信息（包括电路图和电路参数）仅做泛例参考；这并不是批量生产的保证。新洁能保证 说明书中所提到的任何信息都是准确、 可靠的，但是不对其使用在任何违反知识产权或者第三方其他 产权的情况作保证。 ■所有产品由于工艺/技术的提高等所做的信息变动，新洁能不做通知。当在设计电路时，请参照将要使 用的产品的交付说明书。 ■这份说明书所提供的信息时间是在2010年3月。对规格书中信息的更改我们不做通知。 ATTENTION: ■ Any and all NCE products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE representative nearest you before using any NCE products described or contained herein in such applications. ■ NCE assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE products described or contained herein. ■ Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all NCE products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE Power Semiconductor CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied 共 8 页，第 7 页 Pb Free Product http://www.ncepower.com NCE20G120T regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product that you intend to use. ■ This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice. ■ 共 8 页，第 8 页