AP60T03GP
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
30V
RDS(ON)
12mΩ
ID
G
45A
S
Description
AP60T03 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercial-industrial
through hole applications. The low thermal resistance and low
package cost contribute to the worldwide popular package.
G
TO-220(P)
D
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
.
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
45
A
ID@TC=100℃
Drain Current, VGS @ 10V
32
A
120
A
44
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201502254
AP60T03GP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=20A
-
-
12
mΩ
VGS=4.5V, ID=15A
-
-
25
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=10A
-
25
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=20A
-
11.6
19
nC
Qgs
Gate-Source Charge
VDS=24V
-
3.9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
VDS=15V
-
8.8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
57.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
18.5
-
ns
tf
Fall Time
VGS=10V
-
6.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
1135 1816
pF
Coss
Output Capacitance
VDS=25V
-
200
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
135
-
pF
Min.
Typ.
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=45A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
23.3
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP60T03GP
90
125
10V
8.0V
ID , Drain Current (A)
6.0V
75
5.0V
50
6.0V
60
5.0V
30
V G =4.0V
25
V G =4.0V
0
0
0
1
2
3
0
4
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
80
I D =15A
T C =25 ℃
I D =20A
V G =10V
1.6
40
.
Normalized RDS(ON)
60
RDS(ON) (mΩ)
10V
8.0V
o
T C =175 C
ID , Drain Current (A)
o
T C =25 C
100
1.2
0.8
20
0
0.4
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
25
100
175
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
100
2
o
o
T j =175 C
IS(A)
VGS(th) (V)
10
T j =25 C
1
1
0
0.1
0
0.5
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
25
100
175
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP60T03GP
f=1.0MHz
10000
12
V DS =16V
V DS =20V
V DS =24V
9
C (pF)
VGS , Gate to Source Voltage (V)
I D =20A
6
C iss
1000
3
C oss
C rss
0
100
0
6
12
18
1
24
8
Q G , Total Gate Charge (nC)
15
22
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
ID (A)
Operation in this area
limited by RDS(ON)
.
100us
10
1ms
10ms
100ms
DC
T C =25 o C
Single Pulse
1
Normalized Thermal Response (Rthjc)
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP60T03GP
MARKING INFORMATION
60T03GP
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5