Order this document by MJ16018/D SEMICONDUCTOR TECHNICAL DATA *Motorola Preferred Device 1.5 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. Typical Applications: Features: • • • • • • Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS • Collector–Emitter Voltage — VCEV = 1500 Vdc • Fast Turn–Off Times 80 ns Inductive Fall Time — 100_C (Typ) 110 ns Inductive Crossover Time — 100_C (Typ) 4.5 µs Inductive Storage Time — 100_C (Typ) • 100_C Performance Specified for: Reverse–Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Symbol MJ16018 MJW16018 Unit Collector–Emitter Voltage VCEO(sus) 800 Vdc Collector–Emitter Voltage VCEV 1500 Vdc Emitter–Base Voltage VEB 6 Vdc Collector Current — Continuous — Peak(1) IC ICM 10 15 Adc Base Current — Continuous — Peak(1) IB IBM 8 12 Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above TC = 25_C PD Operating and Storage Junction Temperature Range TJ, Tstg 175 100 1 125 50 1 Watts – 65 to 200 – 55 to 150 _C CASE 1–07 TO–204AA MJ16018 W/_C THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case RθJC Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 µs, Duty Cycle TL Max 1 Unit 1 275 _C/W _C CASE 340F–03 TO–247AE MJW16018 10%. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 800 — — Vdc — — — — 0.25 1.5 OFF CHARACTERISTICS(1) Collector–Emitter Sustaining Voltage (Table 1) (IC = 50 mA, IB = 0) Collector Cutoff Current (VCEV = 1500 Vdc, VBE(off) = 1.5 Vdc) (VCEV = 1500 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV mAdc Collector Cutoff Current (VCE = 1500 Vdc, RBE = 50 Ω, TC = 100_C) ICER — — 2.5 mAdc Emitter Cutoff Current (VEB = 6 Vdc, IC = 0) IEBO — — 0.1 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 13 RBSOA See Figure 14 ON CHARACTERISTICS(1) Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 5 Adc) (IC = 5 Adc, IB = 2 Adc, TC = 100_C) VCE(sat) Base–Emitter Saturation Voltage (IC = 5 Adc, IB = 2 Adc) Base–Emitter Saturation Voltage (IC = 5 Adc, IB = 2 Adc, TC = 100_C) DC Current Gain (IC = 5 Adc, VCE = 5 Vdc) Vdc — — — — — — 1 5 1.5 VBE(sat) — — — — 1.5 1.5 Vdc hFE 4 — — — Cob — — 450 pF tsv — 4000 8000 ns tfi — 60 200 tc — 90 300 tsv — 4500 9000 tfi — 80 250 tc — 110 375 td — 85 200 DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 kHz) SWITCHING CHARACTERISTICS Inductive Load (Table 1) Storage Time Baker Clamped (IC = 5 Adc, IB1 = 2 Adc, VBE(off) = 2 Vdc, VCE(pk) = 400 Vdc) PW = 25 µs Fall Time Crossover Time Storage Time Fall Time (TJ = 25_C) (TJ = 100_C) Crossover Time Resistive Load (Table 1) Delay Time Baker Clamped (IC = 5 Adc, VCC = 250 Vdc, IB1 = 2 Adc, IB2 = 2 Adc, RB2 = 3 Ω, PW = 25 µs, Duty Cycle 2%) Rise Time Storage Time Fall Time (1) Pulse Test: PW = 300 µs, Duty Cycle 25°C 0°C 3 2 1 0.15 0.2 VCE = 5 V 0.3 2 5 0.5 0.7 1 3 IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain 2 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) hFE, DC CURRENT GAIN TC = 100°C 20 10 7 5 — 900 2000 — 4500 9000 tf — 200 400 2%. 100 70 50 30 tr ts ns 7 10 15 10 7 5 3 2 IC = 1 A 3A 5A 8A 10 A 3 5 1 0.7 0.5 0.3 0.2 TC = 25°C 0.1 0.07 0.1 0.2 0.3 0.5 0.7 1 2 IB, BASE CURRENT (AMPS) Figure 2. Collector Saturation Region Motorola Bipolar Power Transistor Device Data 7 10 7 5 5 VBE, BASE–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) TYPICAL STATIC CHARACTERISTICS IC/IB = 5 TC = 100°C 3 IC/IB = 5 TC = 25°C 2 1 0.7 0.5 IC/IB = 2.5 TC = 100°C IC/IB = 2.5 TC = 25°C 0.3 0.2 0.1 0.1 0.2 0.3 1 0.5 0.7 3 2 5 7 10 IC/IB = 2.5 1 0.7 0.5 5 0.3 0.2 0.1 0.07 0.05 TC = 25°C THRU 100°C 0.1 0.2 0.3 0.5 0.7 1 3 2 7 5 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector–Emitter Saturation Region Figure 4. Base–Emitter Saturation Region 104 10 10K Cib 103 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT ( µ A) 3 2 TJ = 150°C 102 125°C 100°C 101 75°C REVERSE 100 10–1 – 0.4 25°C 0 – 0.2 + 0.2 + 0.4 VBE, BASE–EMITTER VOLTAGE (VOLTS) 100 1 + 0.6 Cob TC = 25°C 10 VCE = 250 V FORWARD 1K 1 2 5 10 20 50 100 200 VCB, COLLECTOR–BASE VOLTAGE (VOLTS) 500 1K Figure 6. Typical Capacitance Figure 5. Collector Cutoff Region TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS 20 5 10 IC/IB = 2.5 7 5 2.5 3 2 1 0.7 0.5 VBE(off) = 2 V TC = 100°C 0.3 0.2 IC/IB = 2.5 300 t fi , FALL TIME (ns) t sv, STORAGE TIME (µ s) 1000 700 500 5 5 200 2.5 100 70 50 5 30 NO BAKER CLAMP BAKER CLAMPED VBE(off) = 2 V TC = 100°C 20 NO BAKER CLAMP BAKER CLAMPED 10 1 2 3 5 7 10 1 2 3 5 7 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 7. Storage Time Figure 8. Inductive Switching Fall Time Motorola Bipolar Power Transistor Device Data 10 3 TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS 2000 6 t sv, STORAGE TIME (µ s) 300 200 5 2.5 5 100 70 50 VBE(off) = 2 V TC = 100°C 30 20 NO BAKER CLAMP BAKER CLAMPED 4 3 IC = 5 A IB1 = 2 A IB2 = 2 A OR VBE = – 2 V 2 1 0 1 I B2 , REVERSE BASE CURRENT (AMPS) 5 IC/IB = 2.5 700 500 2 3 5 7 10 1 5 9 13 17 PULSE WIDTH (µs) Figure 9. Inductive Switching Crossover Time Figure 10. (tsv) Storage Time versus IB1 Pulse Width IC pk 6 5 25 21 IC, COLLECTOR CURRENT (AMPS) IC = 5 A IB1 = 2 A VCE = 400 V 4 3 VCE(pk) 90% VCE(pk) VOLTAGE AND CURRENT t c , CROSSOVER TIME (ns) 1000 IC tsv 90% IC(pk) trv tfi tti tc VCE IB 10% VCE(pk) 90% IB1 10% IC pk 2% IC 2 1 –1 –2 –3 –4 –5 –6 VBE(off), REVERSE BASE–EMITTER VOLTAGE (VOLTS) TIME Figure 11. Reverse Base Current versus Off Voltage Figure 12. Inductive Switching Measurements GUARANTEED SAFE OPERATING AREA LIMITS 50 30 20 TC = 25°C 10 5 3 2 10 µs MJ16018 dc MJW16018 1 ms 1 0.5 0.3 0.2 0.1 10 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 15 20 30 50 100 200 300 500 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13. Maximum Forward Bias Safe Operating Area 4 IC(pk) , PEAK COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 1K 16 14 12 IC/IB1 = 2.5, 5 10 8 TC ≤ 100°C 6 VBE(off) = 2 V 4 VBE(off) = 0 V 2 0 0 200 400 600 800 1K 1.2K 1.4K 1.6K 1.8K VCE(pk), PEAK COLLECTOR VOLTAGE (VOLTS) Figure 14. Maximum Reverse Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 2K POWER DERATING FACTOR (%) 100 SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 MJ16018 MJW16018 20 0 0 40 80 120 TC, CASE TEMPERATURE (°C) 160 200 Figure 15. Power Derating SAFE OPERATING AREA INFORMATION FORWARD BIAS r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 13 may be found at any case temperature by using the appropriate curve on Figure 15. T J(pk) may be calculated from the data in Figure 16. At high case temperatures, thermal limitations will reduce the 1.0 0.7 0.5 0.3 0.2 power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base–to–emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 14 gives the RBSOA characteristics. D = 0.5 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 P(pk) RθJC(t) = r(t) RθJC RθJC = 1.0°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME @ t1 TJ(pk) – TC = P(pk) RθJC(t) 0.05 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k Figure 16. Thermal Response Motorola Bipolar Power Transistor Device Data 5 Input Conditions 6 Circuit Values Test Circuit Motorola Bipolar Power Transistor Device Data VCC Lcoil (I Cpk) –V +V A L = 10 mH RB2 = ∞ VCC = 20 Volts I(pk) = 50 mA S1 Closed T 1 adjusted to obtain IC(pk) T1 ≈ 0V T1 V off 50 Ω +10 1 µF +15 500 µ F S1 MUR105 *Tektronix AM503 P6302 or Equivalent *I B MUR105 MUR1100 Vclamp MUR8100 L 1 µF Scope — Tektronix 7403 or Equivalent T.U.T. *I C L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 S1 Closed MJE210 MUR105 MTP8P10 100 µ F Drive Circuit RBSOA 100 Ω 150 Ω 150 Ω Note: Adjust Voff to obtain desired VBE(off) at Point A VCEO(sus) A VCC IB VCE IC V CE(pk) I B2 I B1 I C(pk) L = 200 µH RB2 = 0 when VBE(off) is specified or selected for desired I B2 VCC ≈ 20 Volts, Adjusted to obtain desired IC RB1 selected for desired IB1 S1 = Open for baker clamp condition MTP12N10 R B2 R B1 MTP8P10 Inductive Switching A Table 1. Test Conditions for Dynamic Performance RB 50 Ω *I B S1 MUR105 MUR105 MUR1100 T.U.T. for td and t r VCC = 250 Volts RB selected for desired IB1 RL selected for desired IC for ts and t f VCC = 250 Volts RB = 0 RB1 & RB2 selected for IB1 & IB2 R L selected for desired I C For ts and t f : Inductive Switching Drive Circuit t r ≤ 15 ns ≈ 11 V *Tektronix AM503 P6302 or Equivalent 0 V in H.P. 214 OR EQUIV. P.G. For t d and t f : Resistive Switching *I C A VCC RL PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY. C SEATING PLANE –T– E D K 2 PL 0.13 (0.005) U M Y M DIM A B C D E G H K L N Q U V –Y– L V T Q M 2 H G B M T Y 1 –Q– 0.13 (0.005) M INCHES MIN MAX 1.550 REF ––– 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC ––– 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF ––– 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC ––– 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1–07 TO–204AA (TO–3) ISSUE Z 0.25 (0.010) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. –T– –Q– T B M E –B– C 4 U A R 1 K 2 3 –Y– P F V D 0.25 (0.010) M L Y Q S H J DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 20.40 20.90 15.44 15.95 4.70 5.21 1.09 1.30 1.50 1.63 1.80 2.18 5.45 BSC 2.56 2.87 0.48 0.68 15.57 16.08 7.26 7.50 3.10 3.38 3.50 3.70 3.30 3.80 5.30 BSC 3.05 3.40 STYLE 3: PIN 1. 2. 3. 4. G INCHES MIN MAX 0.803 0.823 0.608 0.628 0.185 0.205 0.043 0.051 0.059 0.064 0.071 0.086 0.215 BSC 0.101 0.113 0.019 0.027 0.613 0.633 0.286 0.295 0.122 0.133 0.138 0.145 0.130 0.150 0.209 BSC 0.120 0.134 BASE COLLECTOR EMITTER COLLECTOR CASE 340F–03 TO–247AE ISSUE E Motorola Bipolar Power Transistor Device Data 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 8 ◊ Motorola Bipolar Power Transistor Device Data *MJ16018/D* MJ16018/D