CJL6601 SOT-23-6L Plastic-Encapsulate MOSFETS CJL6601 P-channel and N-channel Complementary MOSFETS GENERAL DESCRIPTION The CJL6601 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications. SOT-23-6L Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Value Symbol N-channel Unit P-channel Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±12 ±12 V ID 3.4 -2.3 A IDM 30 -30 A PD 0.35 0.35 W RθJA 357 357 ℃/W Junction Temperature TJ 150 150 ℃ Storage Temperature Tstg -55~+150 -55~+150 ℃ (1) Continuous Drain Current Pulsed Drain Current (2) Power Dissipation (1) Thermal Resistance from Junction to Ambient 2 1.The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.The current ratings is based on t≤10s thermal rasistance rating. 2. Repetitive rating,pulse with limited by junction temperature. [email protected] www.zpsemi.com 1 of 2 CJL6601 N-channel MOSFET Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =24V,VGS = 0V Gate-source leakage current (note1) IGSS VGS =±12V, VDS = 0V Drain-source on-resistance (note1) Forward tranconductance (note1) Gate threshold voltage Diode forward voltage (note1) RDS(on) gFS VGS(th) VSD 30 V 1 µA ±100 nA VGS =10V, ID =3A 60 mΩ VGS =4.5V, ID =3A 75 mΩ VGS =2.5V, ID =2A 115 mΩ 1.4 V 1 V VDS =5V, ID =3A VDS =VGS, ID =250µA 5 S 0.6 IS=1A,VGS=0V Dynamic characteristics (note2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg VGS =0V,VDS =15V ,f =1MHz VGS =0V,VDS =0V,f =1MHz 390 pF 54.5 pF 41 pF 3 Ω 4 ns Switching Characteristics(note2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr td(off) VGS=10V,VDS=15V, 2 ns RL=5Ω,RGEN=6Ω 22 ns 3 ns tf P-channel MOSFET Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 Gate-source leakage current IGSS VGS =±12V, VDS = 0V ±100 nA VGS =-10V, ID =-2.3A 135 mΩ VGS =-4.5V, ID =-2A 185 mΩ 265 mΩ Drain-source on-resistance (note1) RDS(on) -30 V VGS =-2.5V, ID =-1A Forward tranconductance (note1) Gate threshold voltage Diode forward voltage (note1) gFS VGS(th) VDS VDS =-5V, ID =-2.3A VDS =VGS, ID =-250µA 5 µA S -0.6 IS=-1A,VGS=0V -1.4 V -1 V Dynamic characteristics (note2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg 409 pF 55 pF 42 pF 12 Ω 13 ns VGS=-10V,VDS=-15V, 10 ns RL=6Ω,RGEN=6Ω 28 ns 13 ns VGS =0V,VDS =-15V,f =1MHz VGS =0V,VDS =0V,f =1MHz Switching Characteristics (note2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Notes : td(on) tr td(off) tf 1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. [email protected] www.zpsemi.com 2 of 2