Microsemi JANTX Pnp darlington power silicon transistor Datasheet

TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/505
Devices
Qualified Level
2N6286
JANTX
JANTXV
2N6287
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation(1)
@ TC = +250C
@ TC = +1000C
Operating & Storage Junction Temperature Range
Symbol
2N6286
2N6287
Unit
VCEO
VCBO
VEBO
IB
IC
-80
-80
-100
-100
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
PT
Top, Tstg
-7.0
-0.5
-20
175
87.5
-65 to +175
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Symbol
RθJC
Max.
0.857
Unit
C/W
0
TO-3*
(TO-204AA)
1) Derate linearly @ 1.17 W/0C above TC > +250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
2N6286
2N6287
V(BR)CEO
-80
-100
2N6286
2N6287
ICEO
-1.0
-1.0
mAdc
2N6286
2N6287
ICEX
-0.5
-0.5
mAdc
IEBO
-2.5
Adc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC =-100 mAdc
Collector-Emitter Cutoff Current
VCE = -40 Vdc
VCE = -50 Vdc
Collector-Emitter Cutoff Current
VCE = -80 Vdc, VBE = 1.5 Vdc
VCE = -100 Vdc, VBE = 1.5 Vdc
Emitter-Base Cutoff Current
VEB = -7.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
120101
Page 1 of 2
2N6286, 2N6287 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
hFE
1,500
1,250
300
18,000
Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = -1.0 Adc, VCE = -3.0 Vdc
IC = -10 Adc, VCE = -3.0 Vdc
IC = -20 Adc, VCE = -3.0 Vdc
Collector-Emitter Saturation Voltage
IC = -20 Adc, IB = -200 mAdc
IC = -10 Adc, IB = -40 mAdc
Base-Emitter Saturation Voltage
IC = -20 Adc, IB = -200 mAdc
Base-Emitter Voltage
IC = -10 Adc, VCE = -3.0 Vdc
VCE(sat)
-3.0
-2.0
Vdc
VBE(sat)
-4.0
Vdc
VBE(on)
-2.8
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = -10 Adc, VCE = -3.0 Vdc f = 1.0 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = -10 Adc, VCE = -3.0 Vdc
Output Capacitance
VCB = -10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
8.0
hfe
300
80
400
pF
on
2.0
µs
off
10
µs
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = -30 Vdc; IC = -10 Adc; IB = -40 mAdc
Turn-Off Time
VCC = -30 Vdc; IC = -10 Adc; IB1 = IB2 = -40 mAdc
t
t
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = -8.75 Vdc, IC = -20 Adc
All Types
Test 2
VCE = -30 Vdc, IC = -5.8 Adc
All Types
Test 3
VCE = -80 Vdc, IC = -100 mAdc
2N6286
VCE = -100 Vdc, IC = -100 mAdc
2N6287
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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