MSX1PB, MSX1PD, MSX1PG, MSX1PJ www.vishay.com Vishay General Semiconductor Surface-Mount ESD Capability Rectifier FEATURES • • • • • • Available Very low profile - typical height of 0.65 mm Ideal for automated placement Oxide planar chip junction Low forward voltage drop, low leakage current ESD capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ® eSMP Series Top View Bottom View MicroSMP (DO-219AD) TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 100 V, 200 V, 400 V, 600 V IFSM 18 A VF at IF = 1.0 A (125 °C) 0.9 V General purpose, polarity protection, and rail-to-rail protection in commercial, industrial, and automotive applications. MECHANICAL DATA TJ max. 175 °C Package MicroSMP (DO-219AD) Diode variations Single Case: MicroSMP (DO-219AD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free and RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code MSX1PB MSX1PD MSX1PG MSX1PJ XB XD XG XJ 100 200 400 600 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current IF(AV) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 18 A TJ, TSTG -55 to +175 °C Operating junction and storage temperature range V ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 0.5 A Maximum instantaneous forward voltage IF = 1.0 A IF = 0.5 A IF = 1.0 A SYMBOL TA = 25 °C VF (1) TA = 125 °C TA = 25 °C IR (2) TYP. MAX. 0.93 - 1.0 1.1 0.81 - 0.9 0.98 - 1.0 4.1 50 UNIT V Maximum reverse current Rated VR Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 960 - ns Typical junction capacitance 4.0 V, 1 MHz CJ 5 - pF TA = 125 °C μA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms Revision: 24-Jan-18 Document Number: 87726 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSX1PB, MSX1PD, MSX1PG, MSX1PJ www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance MSX1PB MSX1PD MSX1PG RJA (1) 110 RJL (1) 30 MSX1PJ UNIT °C/W Note (1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. R JL is measured at the terminal of cathode band IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS (TA = 25 °C, unless otherwise noted) STANDARD AEC-Q101-001 CLASS VALUE Human body model (contact mode) TEST TYPE C = 100 pF, R = 1.5 k TEST CONDITIONS SYMBOL H3B > 8 kV AEC-Q101-002 Machine model (contact mode) C = 200 pF, R = 0 M4 > 400 V JESD 22-A114 Human body model (contact mode) C = 100 pF, R = 1.5 k 3B > 8 kV JESD 22-A115 Machine model (contact mode) C = 200 pF, R = 0 C > 400 V Human body model (contact mode) C = 150 pF, R = 330 4 > 8 kV C = 150 pF, R = 330 4 > 15 kV C = 330 pF, R = 2 k - 20 kV typ. IEC 61000-4-2 (2) ISO 10605 Human body model (air-discharge mode) Contact mode (1) VC Notes (1) Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV (2) System ESD standard ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MSX1PJ-M3/89A 0.006 89A 4500 7" diameter plastic tape and reel MSX1PJHM3/89A (1) 0.006 89A 4500 7" diameter plastic tape and reel Note (1)AEC-Q101 qualified Revision: 24-Jan-18 Document Number: 87726 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSX1PB, MSX1PD, MSX1PG, MSX1PJ www.vishay.com Vishay General Semiconductor 1.2 100 Instantaneous Reverse Current (μA) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 25 °C 0.01 0.001 175 20 Case Temperature (°C) 40 60 Fig. 4 - Typical Reverse Leakage Characteristics 1.2 100 D = 0.8 1.0 D = 0.5 0.8 D = 1.0 D = 0.3 0.6 Junction Capacitance (pF) Average Power Loss (W) 100 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve D = 0.2 D = 0.1 0.4 T 0.2 D = tp/T TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 tp 0.0 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0.1 1 Average Forward Current (A) TJ = 175 °C TJ = 150 °C 1 TJ = 125 °C TJ = 100 °C TJ = 75 °C 0.1 TJ = 25 °C TJ = -40 °C 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 100 Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) 10 10 Reverse Voltage (V) Fig. 2 - Average Power Loss Characteristics Instantaneous Forward Current (A) 80 10 Junction to Case 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 24-Jan-18 Document Number: 87726 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSX1PB, MSX1PD, MSX1PG, MSX1PJ www.vishay.com Vishay General Semiconductor Electrostatic Discharge ESD (kV) 35 30 25 20 15 C = 330 pF, R = 2 kΩ 10 Fig. 7 - ESD Dispersion Map PACKAGE OUTLINE DIMENSIONS in inches (millimeters) MicroSMP (DO-219AD) 0.059 (1.50) 0.043 (1.10) Cathode Band 0.055 (1.40) 0.047 (1.20) 0.030 (0.75) 0.022 (0.55) 0.039 (0.98) 0.031 (0.78) 0.091 (2.30) 0.083 (2.10) 0.106 (2.70) 0.091 (2.30) 0.030 (0.75) 0.022 (0.55) Mounting Pad Layout 0.079 (2.00) 0.029 (0.73) 0.025 (0.63) 0.043 (1.10) 0.011 (0.27) 0.005 (0.12) 0.032 (0.80) 0.032 (0.80) 0.020 (0.50) Revision: 24-Jan-18 Document Number: 87726 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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