MMG75SR060UA 600V 75A IGBT Module RoHS Compliant FEATURES · Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module · SMPS and UPS · Induction Heating ABSOLUTE MAXIMUM RATINGS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Values Unit IGBT VCES Collector - Emitter Voltage 600 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 150 A TC=100°C 75 A ICpuls Pulsed Collector Current TC=25°C, tp=1ms 300 A TC=80°C, tp=1ms 210 A Ptot Power Dissipation Per IGBT 625 W TJ Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C Visol Insulation Test Voltage 3000 V 600 V TC=25°C 125 A TC=80°C 85 A 122 A AC, t=1min Free-Wheeling Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IF(RMS) RMS Forward Current IFSM Non-Repetitive Surge TJ=45°C, t=10ms, Sine 500 A Forward Current TJ=45°C, t=8.3ms, Sine 545 A MIMMG75SR060UA ELECTRICAL CHARACTERISTICS Symbol TC=25°C unless otherwise specified Parameter Test Conditions Min. Typ. Max. Unit IGBT VGE(th) VCE(sat) Gate - Emitter Threshold Voltage VCE=VGE, IC=250μA 3.5 5.5 Collector - Emitter IC=75A, VGE=15V, TJ=25°C 1.7 Saturation Voltage IC=75A, VGE=15V, TJ=125°C 2.0 VCE=600V, VGE=0V, TJ=25°C V V V 0.5 ICES Collector Leakage Current IGES Gate Leakage Current VCE=0V, VGE=±20V Qge Gate Charge VCC=300V, IC=75A , VGE=±15V Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr VCE=600V, VGE=0V, TJ=125°C mA 2 -1.1 mA 1.1 μA 230 nC 5.3 nF 0.52 nF 0.34 nF VCC=300V, IC=75A 45 ns Rise Time RG =10Ω,VGE=±15V 45 ns td(off) Turn - off Delay Time TJ=25°C 320 ns tf Fall Time Inductive Load 35 ns td(on) Turn - on Delay Time VCC=300V, IC=75A 50 ns tr Rise Time RG =10Ω,VGE=±15V 45 ns td(off) Turn - off Delay Time TJ=125°C 350 ns tf Fall Time Inductive Load 40 ns Eon Turn - on Switching Energy Eoff Turn - off Switching Energy VCE=25V, VGE=0V, f =1MHz VCC=300V, IC=75A TJ=25°C 3.5 mJ RG =10Ω TJ=125°C 4.5 mJ VGE=±15V TJ=25°C 2.5 mJ Inductive Load TJ=125°C 3.5 mJ Free-Wheeling Diode IF=75A , VGE=0V, TJ=25°C 1.8 2.1 V VF Forward Voltage trr Reverse Recovery Time IF=75A , VR=400V 50 ns IRRM Max. Reverse Recovery Current diF/dt=-1000A/μs 45 A Qrr Reverse Recovery Charge TJ=125°C 1.5 µC IF=75A , VGE=0V, TJ=125°C 1.5 1.8 V THERMAL AND MECHANICAL CHARACTERISTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit RthJC Junction-to-Case Thermal Resistance Per IGBT 0.2 K /W RthJCD Junction-to-Case Thermal Resistance Per Inverse Diode 0.5 K /W Torque Module-to-Sink Recommended（M6） 3 5 N· m Torque Module Electrodes Recommended（M5） 2.5 5 N· m Weight 150 g 300 300 250 250 200 200 T J =25°C 150 V CE =20V T J =25°C IC (A) IC (A) MIMMG75SR060UA 150 T J =125°C T J =125°C 100 100 50 50 0 0 0 1.5 2.5 3.5 2 3 VCE(sat)（V） Figure1. Typical Output characteristics 0.5 1 60 40 25 V CC =300V R G =10ohm V GE =±15V T J =125°C 20 Eon Eoff (mJ) Eon Eoff (mJ) 50 30 E on 20 10 0 0 6 8 4 10 1 22 140 VGE（V） Figure2. Typical Transfer characteristics 15 E on 10 5 E of f E of f 0 70 30 40 50 60 RG（ohm） Figure4. Switching Energy vs. Gate Resistor 50 100 150 200 250 300 350 IC（A） Figure3. Switching Energy vs. Collector Current 1000 V CC =300V I C =100A V GE =±15V T J =125°C 0 10 20 1000 td(off ) t (ns) t (ns) td(off ) 100 100 tr td(on ) td(on ) tf V CC =300V R G =10ohm V GE =±15V T J =125°C tf 10 0 30 90 120 150 180 210 IC（A） Figure5. Switching Times vs. Collector Current 60 V CC =300V I C =100A V GE =±15V T J =125°C tr 10 35 15 20 25 30 RG（ohm） Figure6. Switching Times vs. Gate Resistor 0 5 10 MIMMG75SR060UA 10 25 20 C ies V CC =300V I C =100A T J =25°C C (nF) VGE (V) 15 10 V GE =0V f=1MHz 1 C oes C res 5 0 0 350 20 25 30 35 900 600 100 T J =150°C T C =25°C V GE =15V 100 T J =150°C T C =25°C V GE =15V tsc ≤10µs 300 0 200 300 400 500 600 700 VCE（V） Figure10. Short Circuit Safe Operating Area 300 400 500 600 700 VCE（V） Figure9. Reverse Biased Safe Operating Area 200 175 0 100 300 T J =150°C V GE ≥15V 150 250 125 200 100 T J =125°C IF (A) IC(A) 15 VCE（V） Figure8. Typical Capacitances vs. VCE ICsc (A) 150 75 150 100 50 T J =25°C 50 25 0 0 10 1200 200 0 0 5 1500 250 50 0 1800 300 ICpuls (A) 0.1 100 200 150 250 Qg（nC） Figure7. Gate Charge characteristics 50 50 75 100 125 150 TC Case Temperature(°C) Figure11. Rated Current vs. TC 25 175 0 0 1.5 2.0 2.5 3 3.5 VF（V） Figure12. Diode Forward Characteristics 0.5 1.0 MIMMG75SR060UA 1 1 -1 10-1 10-2 ZthJC (K/W) Duty 0.5 0.2 0.1 0.05 Single Pulse 10-3 Duty 0.5 0.2 0.1 0.05 Single Pulse 10-2 10-3 -4 10-4 -4 10 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure14. Transient Thermal Impedance of Diode 10 10-3 10-4 10-2 10-1 1 Rectangular Pulse Duration (seconds) Figure13. Transient Thermal Impedance of IGBT 1 2 3 6 7 Figure15. Circuit Diagram M5 8.5 23.0 29.5 30.5 2.8x0.5 3 17.0 34.0 2 7 6 1 4.5 94.0 23.0 23.0 17.0 80.0 Dimensions in mm Figure16. Package Outlines 4.5 4 5 6.5 ZthJC (K/W) 10