WTE ER800F 8.0a isolation super-fast glass passivated rectifier Datasheet

ER800F – ER806F
WTE
POWER SEMICONDUCTORS
8.0A ISOLATION SUPER-FAST GLASS PASSIVATED RECTIFIER
Features
!
Glass Passivated Die Construction
!
!
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!
!
Super-Fast Switching for High Efficiency
High Current Capability
C
Low Reverse Leakage Current
High Surge Current Capability
G
Plastic Material has UL Flammability
Classification 94V-O
D
B
Mechanical Data
!
!
!
!
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A
PIN1
2
F
Case: ITO-220A Full Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
Marking: Type Number
ITO-220A
Dim
Min
Max
A
14.9
15.1
B
—
10.5
C
2.62
2.87
D
3.56
4.06
E
13.46
14.22
F
0.68
0.94
G
3.74 Ø
3.91 Ø
H
5.84
6.86
I
4.44
4.70
J
2.54
2.79
K
0.35
0.64
L
1.14
1.40
P
4.95
5.20
All Dimensions in mm
E
P
I
L
H
PIN 1+
J
PIN 2 -
K
Maximum Ratings and Electrical Characteristics
@TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
ER
800F
ER
801F
ER
801AF
ER
802F
ER
803F
ER
804F
ER
806F
Unit
VRRM
VRWM
VR
50
100
150
200
300
400
600
V
VR(RMS)
35
70
105
140
210
280
420
V
IO
8.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
125
A
Forward Voltage
@IF = 8.0A
VFM
@TA = 25°C
@TA = 100°C
IRM
Peak Reverse Current
At Rated DC Blocking Voltage
@TC = 105°C
Symbol
0.95
1.3
1.7
10
400
V
µA
Reverse Recovery Time (Note 1)
trr
35
50
nS
Typical Junction Capacitance (Note 2)
Cj
70
50
pF
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
ER800F – ER806F
1 of 3
© 2002 Won-Top Electronics
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
10
8
6
4
2
0
0
50
100
100
800F - 802F
806F
1.0
Pulse width = 300µs
2% duty cycle
0.1
150
0.2
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
0.6
1.0
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
180
400
8.3 ms single half-sine-wave
JEDEC method
150
800F - 802F
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
803F - 804F
10
120
90
60
100
803F - 806F
30
10
0
1
10
0.1
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
ER800F – ER806F
1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
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© 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.
Package Type
Shipping Quantity
ER800F
ITO-220A
50 Units/Tube
ER801F
ITO-220A
50 Units/Tube
ER801AF
ITO-220A
50 Units/Tube
ER802F
ITO-220A
50 Units/Tube
ER803F
ITO-220A
50 Units/Tube
ER804F
ITO-220A
50 Units/Tube
ER806F
ITO-220A
50 Units/Tube
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: [email protected]
Internet: http://www.wontop.com
ER800F – ER806F
We power your everyday.
3 of 3
© 2002 Won-Top Electronics
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