APTM100DA18CT1G VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 40A @ Tc = 25°C Boost chopper MOSFET + SiC chopper diode Power Module Application 5 6 11 • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features 3 4 Q2 • NTC 9 Power MOS 8™ MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged 10 1 2 • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF 12 • • • Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 1000 40 30 260 ±30 216 657 33 Unit V September, 2009 • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant A V mΩ W A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTM100DA18CT1G – Rev 0 Pins 1/2 ; 3/4 ; 5/6 must be shorted together • • • • APTM100DA18CT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS =1000V VGS = 0V Tj = 125°C VGS = 10V, ID = 33A VGS = VDS, ID = 2.5mA VGS = ±30 V Min 3 Typ 180 4 Max 100 500 216 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 14800 1555 196 pF 570 VGS = 10V VBus = 500V ID = 33A nC 100 270 85 Resistive switching @ 25°C VGS = 15V VBus = 667V ID = 33A RG = 2.2Ω 75 ns 285 70 SiC chopper diode ratings and characteristics IF Maximum Reverse Leakage Current VR=1200V DC Forward Current Min 1200 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Typ Max 64 112 20 1.6 2.3 400 2000 VF Diode Forward Voltage IF = 20A QC Total Capacitive Charge IF = 20A, VR = 600V di/dt =1000A/µs 80 C Total Capacitance f = 1MHz, VR = 200V 192 f = 1MHz, VR = 400V 138 Unit V µA A 1.8 3 V nC pF Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor SiC Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 4000 -40 -40 -40 2.5 Typ Max 0.19 1 Unit °C/W V 150 125 100 4.7 80 °C N.m g 2–5 September, 2009 IRM Test Conditions APTM100DA18CT1G – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTM100DA18CT1G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature 1 ⎞⎤ RT: Thermistor value at T ⎡ ⎛ 1 − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦⎥ ⎣⎢ SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Typical Mosfet Performance Curve Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.9 0.16 September, 2009 0.7 0.12 0.5 0.08 0.04 0.3 0.1 Single P ulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 3–5 APTM100DA18CT1G – Rev 0 Thermal Impedance (°C/W) 0.2 APTM100DA18CT1G Low Voltage Output Characteristics Low Voltage Output Characteristics 70 120 90 60 TJ=125°C 60 TJ=25°C ID, Drain Current (A) TJ=125°C 30 0 VGS=6, 7, 8 & 9V 50 40 5V 30 20 4.5V 10 0 0 5 10 15 20 0 5 VDS, Drain to Source Voltage (V) 20 25 30 Transfert Characteristics 3 60 VGS=10V ID=33A 2.5 ID, Drain Current (A) 2 1.5 1 0.5 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 50 40 TJ=125°C 30 20 TJ=25°C 10 0 25 50 75 100 125 150 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) Capacitance vs Drain to Source Voltage Gate Charge vs Gate to Source 12 100000 VDS=200V Ciss C, Capacitance (pF) ID=33A TJ=25°C 10 VDS=500V 8 6 VDS=800V 4 2 0 10000 1000 Coss Crss 100 10 0 100 200 300 400 500 600 Gate Charge (nC) 0 50 100 150 200 VDS, Drain to Source Voltage (V) www.microsemi.com 4–5 September, 2009 RDSon, Drain to Source ON resistance 15 VDS, Drain to Source Voltage (V) Normalized RDS(on) vs. Temperature VGS, Gate to Source Voltage 10 APTM100DA18CT1G – Rev 0 ID, Drain Current (A) VGS=10V APTM100DA18CT1G Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 200 30 TJ=75°C 20 TJ=125°C TJ=175°C 10 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 150 100 TJ=75°C TJ=125°C 50 TJ=175°C TJ=25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 0 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) VF Forward Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 1400 1200 1000 800 600 400 0 1 10 100 VR Reverse Voltage 1000 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTM100DA18CT1G – Rev 0 September, 2009 200