Weitron BZM55C82 Surface mount zener diode Datasheet

BZM55C Series
Surface Mount Zener Diodes
P b Lead(Pb)-Free
SMALL SIGNAL
ZENER DIODES
Features:
*500mw Power Dissipation
*General Purpose
*Ideal for Surface Mountted Application
0.5 WATTS
Mechanical Data:
*Case : MICRO-MELF Glass Case
*Weight : Approx 0.01g
MICRO-MELF
MICRO-MELF Outline Dimensions
MICRO-MELF
A
2.5
R≥ ass
Gl
Dim
B
C
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Unit:mm
1/5
A
B
C
Min
2.0
1.20
1.35
Max
1.8
1.30
1.35
Rev.A 12-Oct-09
WEITRON
BZM55C Series
Maximum Ratings and Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Value
Unit
Power Dissipation, RθJA≤300˚C/W
PD
500
mW
Z-Current
IZ
PD/VZ
mA
RθJA
500
˚C/W
Forward Voltage @ IF=200mA
VF
1.5
V
Operation Junction Temperature Range
TJ
175
C
TSTG
-65 to+175
C
Characteristics
Thermal Resistance Junction to Ambient(1)
Storage Temperature Range
Note: 1.On pc board 50 mm x 50mm x 1.6mm
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Rev.A 12-Oct-09
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BZM55C Series
Electrical Characteristics
Type
BZM55C.
2V0
2V2
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
1)
VZnom
V
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
IZT for VZT and
1)
mA
V
5
1.9~2.1
5
2.09~2.31
5
2.28~2.56
5
2.5~2.9
5
2.8~3.2
5
3.1~3.5
5
3.4~3.8
5
3.7~4.1
5
4.0~4.6
5
4.4~5.0
5
4.8~5.4
5
5.2~6.0
5
5.8~6.6
5
6.4~7.2
5
7.0~7.9
5
7.7~8.7
5
8.5~9.6
5
9.4~10.6
5
10.4~11.6
5
11.4~12.7
5
12.4~14.1
5
13.8~15.6
5
15.3~17.1
5
16.8~19.1
5
18.8~21.2
5
20.8~23.3
5
22.8~25.6
5
25.1~28.9
5
28~32
5
31~35
5
34~38
2.5
37~41
2.5
40~46
2.5
44~50
2.5
48~54
2.5
52~60
2.5
58~66
2.5
64~72
2.5
70~79
2.5
77~87
1.0
85~96
1.0
94~106
(TA=25 C unless otherwise noted, VF=1.5 V Max. @IF=200mA for all types)
rzjT
Ω
100
100
<85
<85
<85
<85
<85
<85
<75
<60
<35
<25
<10
<8
<7
<7
<10
<15
<20
<20
<26
<30
<40
<50
<55
<55
<80
<80
<80
<80
<80
<90
<90
<110
<125
<135
<150
<200
<250
<300
<450
<450
rzjK at IZK
Ω
mA
<600
1
<600
1
<600
1
<600
1
<600
1
<600
1
<600
1
<600
1
<600
1
<600
1
<550
1
<450
1
<200
1
<150
1
<50
1
<50
1
<50
1
<70
1
<70
1
<90
1
<110
1
<110
1
<170
1
<170
1
<220
1
<220
1
<220
1
<220
1
<220
1
<220
1
<220
1
<500
0.5
<600
0.5
<700
0.5
<700
0.5
<1000
0.5
<1000
0.5
<1000
0.5
<1500
0.5
<2000
0.5
<5000
0.1
<5000
0.1
IR and
μA
<150
<150
<50
<10
<4
<2
<2
<2
<1
<0.5
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
IR at
2)
μA
<300
<300
<100
<50
<40
<40
<40
<40
<20
<10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
<10
<10
<10
<10
<10
<10
<10
<10
VR
V
1
1
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
TKVZ
%/K
-0.09~-0.06
-0.09~-0.06
-0.09~-0.06
-0.09~-0.06
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.06~-0.03
-0.05~+0.02
-0.02~+0.02
-0.05~+0.05
0.03~0.06
0.03~0.07
0.03~0.07
0.03~0.08
0.03~0.09
0.03~0.1
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
Tighter tolerances available request:
BZM55B… ±2% of VZnom
2)
at Tj=150℃
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Rev.A 12-Oct-09
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BZM55C Series
600
1.3
VZtn – Relative Voltage Change
Ptot – Total Power Dissipation ( mW )
Characteristics(TA=25˚C unless otherwise specified)
500
400
300
200
100
0
0
40
80
120
160
VZtn=VZt/VZ(25°C)
1.2
TKVZ=10
1.1
TK VZ – Temperature Coefficient of VZ ( 10 –4 /K )
VZ – Voltage Change ( mV )
Tj = 25°C
100
IZ=5mA
10
10
15
20
10–4/K
10–4/K
0
60
120
10–4/K
180
240
Fig.2 Typical Change of Working Voltage vs.
Junction Temperature
1000
5
4
2
Tj – Junction Temperature ( °C )
Fig.1 Total Power Dissipation vs.
Ambient Temperature
0
10–4/K
10–4/K
–4
0.9
Tamb – Ambient Temperature ( °C )
1
8
6
0
–2 10–4/K
1.0
0.8
–60
200
10–4/K
25
VZ – Z-Voltage ( V )
Fig.3 Typical Change of Working Voltage
under Operating Conditions at Tamb =25 C
15
10
5
IZ=5mA
0
–5
0
10
20
30
40
50
VZ – Z-Voltage ( V )
Fig.4 Temperature Coefficient of Vz vs. Z–Voltage
C D – Diode Capacitance ( pF )
200
150
VR = 2V
Tj = 25°C
100
50
0
0
5
10
15
20
25
VZ – Z-Voltage ( V )
Fig.5 Diode Capacitance vs. Z–Voltage
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Rev.A 12-Oct-09
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100
50
10
40
IZ – Z-Current ( mA )
IF – Forward Current ( mA )
BZM55C Series
Tj = 25˚C
1
0.1
0.01
0.001
Ptot=500mW
Tamb=25°C
30
20
10
0
0.2
0.4
0.6
0
1.0
0.8
15
20
25
35
30
VZ – Z-Voltage ( V )
VF – Forward Voltage ( V )
Figure 7. Z–Current vs. Z–Voltage
Fig.6 Forward Current vs. Forward Voltage
100
80
r Z – Differential Z-Resistance (
IZ – Z-Current ( mA )
)
1000
Ptot=500mW
Tamb=25°C
60
40
20
0
0
4
8
12
IZ=1mA
100
5mA
10 10mA
1
20
16
Tj = 25°C
0
5
10
VZ – Z-Voltage ( V )
20
25
VZ – Z-Voltage ( V )
Figure 9. Differential Z–Resistance vs. Z–Voltage
Figure 8. Z–Current vs. Z–Voltage
Z thp – Thermal Resistance for Pulse Cond. (˚C / W )
15
1000
tp/T=0.5
100
tp/T=0.2
Single Pulse
10
tp/T=0.1
tp/T=0.02
tp/T=0.01
iZM=(–VZ+(VZ2+4rzj
tp/T=0.05
1
0.1
RthJA=300˚C/W
T=Tjmax–Tamb
1
10
T/Zthp)1/2)/(2rzj)
100
tp – Pulse Length ( ms )
Figure 10. Thermal Response
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Rev.A 12-Oct-09