DSS 25-0025B IFAV = 25 A VRRM = 25 V VF = 0.44 V Power Schottky Rectifier Preliminary Data VRSM VRRM V V 25 25 TO-220 AC Type A C C A DSS 25-0025B C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 125°C; rectangular, d = 0.5 IFSM 35 25 A A TVJ = 45°C; tp = 10 ms (50 Hz), sine 300 A EAS IAS = tbd A; L = 180 µH; TVJ = 25°C; non repetitive tbd mJ IAR VA =1.5 • VRRM typ.; f=10 kHz; repetitive tbd A tbd V/ms (dv/dt)cr TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical Symbol Conditions IR VF -55...+150 150 -55...+150 °C °C °C 90 W 0.4...0.6 2 g Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 100°C VR = VRRM IF = 25 A; IF = 25 A; IF = 50 A; Nm 20 80 TVJ = 125°C TVJ = 25°C TVJ = 125 °C RthJC RthCH 0.5 Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see outlines.pdf mA mA 0.44 0.52 0.66 V V V 1.4 K/W K/W IXYS reserves the right to change limits, Conditions and dimensions. © 2002 IXYS All rights reserved 232 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSS 25-0025B 100 10000 1000 A mA TVJ=150°C pF IR 100 125°C IF CT 100°C 10 10 1000 75°C 1 TVJ = 150°C 125°C 25°C 50°C 0.1 25°C TVJ= 25°C 1 0.0 100 0.01 0.2 0.6 V 0.4 0 5 10 15 Fig. 1 Maximum forward voltage drop characteristics Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 40 20 A W P(AV) 30 15 d=0.5 IF(AV) 10 10 5 0 40 80 120 °C 160 d= DC 0.5 0.33 0.25 0.17 0.08 0 10 20 IF(AV) TC Fig. 4 Average forward current IF(AV) versus case temperature TC 10 15 20 V 25 VR Fig. 3 Typ. junction capacitance CT versus reverse voltage VR A IFSM 1000 0 0 5 10000 DC 20 0 20 V 25 VR VF 30 A 100 10 100 1000 µs 10000 tP Fig. 5 Forward power loss characteristics 2 1 D=0.5 K/W ZthJC 0.33 0.25 0.17 Single Pulse 0.08 0.1 0.01 0.0001 DSS 25-0025B 0.001 0.01 0.1 s 1 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles © 2002 IXYS All rights reserved Note: All curves are per diode 2-2