isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY25 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed APPLICATIONS ·Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A IB Base Current 3 A PC Collector Power Dissipation@TC=25℃ 87.5 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER MAX UNIT 2.0 ℃/W Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDY25 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 140 V V(BR)CBO Collector-Base Breakdown Voltage IC= 3mA; IE= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.25A 1.2 V ICES Collector Cutoff Current VCE= 180V; VBE= 0 1.0 mA ICEO Collector Cutoff Current VCE= 140V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 1.0 mA hFE DC Current Gain IC= 2A; VCE= 4V 15 Current Gain-Bandwidth Product IC= 0.5A; VCE= 15V; f=10MHz 10 fT CONDITIONS MIN B B TYP. MAX UNIT 100 MHz Switching Times ton Turn-On Time IC= 5A; IB= 1A 0.5 μs toff Turn-Off Time IC= 5A; IB1= 1A; IB2= -0.5A 2.0 μs B hFE Classifications A B C 15-45 30-90 75-100 isc Website：www.iscsemi.cn 2