ON MBRM110LT3G Surface mount schottky power rectifier Datasheet

MBRM110LT1G,
NRVBM110LT1G,
NRVBM110LT3G
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The Schottky POWERMITE employs the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage drop−reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the POWERMITE has the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles,  1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “ORing” of
multiple supply voltages and any other application where performance
and size are critical.
Features









Ultra Low VF
1st in Marketplace with a 10 VR Schottky Rectifier
Low Profile − Maximum Height of 1.1 mm
Small Footprint − Footprint Area of 8.45 mm2
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
ESD Ratings:
 Human Body Model > 4000 V (Class 3)
 Machine Model > 400 V (Class C)
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics:





POWERMITE is JEDEC Registered as D0−216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 62 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Maximum for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 10 VOLTS
ANODE
CATHODE
POWERMITE
CASE 457
PLASTIC
MARKING DIAGRAM
1
M
1L1
G
M
1L1G
2
= Date Code
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
MBRM110LT1G
POWERMITE
(Pb−Free)
3,000 /
Tape & Reel
NRVBM110LT1G
POWERMITE
(Pb−Free)
3,000 /
Tape & Reel
MBRM110LT3G
POWERMITE
(Pb−Free)
12,000 /
Tape & Reel
NRVBM110LT3G
POWERMITE
(Pb−Free)
12,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 2
1
Publication Order Number:
MBRM110L/D
MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
10
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 115C, RqJL = 35C/W)
IO
A
1.0
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
Storage Temperature
Tstg
−55 to 125
C
Operating Junction Temperature
TJ
−55 to 125
C
Voltage Rate of Change
(Rated VR, TJ = 25C)
A
50
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Rtjl
Rtjtab
Rtja
35
23
277
C/W
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
VF
Maximum Instantaneous Forward Voltage (Note 2)
TJ = 100C
0.280
0.365
0.415
0.175
0.275
0.325
TJ = 25C
TJ = 100C
0.2
0.5
30
60
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 2.0 A)
IR
Maximum Instantaneous Reverse Current (Note 2)
Unit
TJ = 25C
(VR = 5.0 V)
(VR = 10 V)
V
mA
10
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
2. Pulse Test: Pulse Width  250 ms, Duty Cycle  2%.
TJ = 125C
100C
75C
25C
1
−55C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
TJ = 125C
100C
75C
1
25C
0.1
0.1
0.2
0.3
−55C
0.4
0.5
0.6
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
http://onsemi.com
2
0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1E−1
TJ = 125C
1E−2
100C
75C
1E−3
1E−4
25C
1E−5
1E−6
1
0
2
3
4
5
6
7
8
9
10
VR, REVERSE VOLTAGE (VOLTS)
IR, INSTANTANEOUS REVERSE VOLTAGE (VOLTS)
IR, INSTANTANEOUS REVERSE VOLTAGE (VOLTS)
MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G
1E+0
TJ = 125C
1E−1
100C
75C
1E−2
1E−3
25C
1E−4
1E−5
0
1
3
4
5
6
7
8
9
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
IF , AVERAGE FORWARD CURRENT (AMPS)
2
Figure 4. Maximum Reverse Current
1.8
dc
1.6
1.4
SQUARE WAVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
60
40
80
100
120
140
TL, LEAD TEMPERATURE (C)
500
C, CAPACITANCE (pF)
450
400
350
300
TJ = 25C
f = 1 MHz
250
200
150
100
0
1
2
3
4
5
6
7
8
VR, REVERSE VOLTAGE (VOLTS)
9
10
PFO, AVERAGE POWER DISSIPATION (WATTS)
Figure 5. Current Derating − Junction to Lead
0.45
0.4
dc
0.35
0.3
SQUARE WAVE
0.25
0.2
0.15
0.1
0.05
0
0
Figure 6. Typical Capacitance
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Forward Power Dissipation
http://onsemi.com
3
1.8
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G
1.0
50%
20%
0.1
10%
5.0%
0.01
2.0%
1.0%
Rtjl(t) = Rtjl*r(t)
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
T, TIME (s)
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 8. Thermal Response Junction to Lead
1.0
50%
20%
0.1
10%
5.0%
0.01
2.0%
Rtjl(t) = Rtjl*r(t)
1.0%
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
T, TIME (s)
Figure 9. Thermal Response Junction to Ambient
http://onsemi.com
4
10
100
1,000
MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G
PACKAGE DIMENSIONS
POWERMITE
CASE 457−04
ISSUE E
F
0.08 (0.003)
C
−A−
J
M
T B
S
C
S
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
PIN 1
−B−
DIM
A
B
C
D
F
H
J
K
L
R
S
K
PIN 2
R
L
J
D
H
−T−
0.08 (0.003)
M
T B
S
C
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
1.75
2.05 0.069
0.081
1.75
2.18 0.069
0.086
0.85
1.15 0.033
0.045
0.40
0.69 0.016
0.027
0.70
1.00 0.028
0.039
-0.05
+0.10 -0.002 +0.004
0.10
0.25 0.004
0.010
3.60
3.90 0.142
0.154
0.50
0.80 0.020
0.031
1.20
1.50 0.047
0.059
0.50 REF
0.019 REF
STYLE 1:
PIN 1. CATHODE
2. ANODE
S
SOLDERING FOOTPRINT*
0.635
0.025
2.67
0.105
0.762
0.030
2.54
0.100
1.27
0.050
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBRM110L/D