BCD AH278 High voltage hall effect latch Datasheet

Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH278
General Description
Features
The AH278 is an integrated Hall sensor with output
driver designed for electronic commutation of brushless DC motor applications. The device includes an onchip Hall sensor for magnetic sensing, an amplifier
that amplifies the Hall voltage, a Schmitt trigger to
provide switching hysteresis for noise rejection and
two complementary open-collector drivers for sinking
large load current. It also includes an internal band-gap
regulator which is used to provide bias voltage for
internal circuits and allows a wide operating supply
voltage ranges.
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·
·
·
·
·
·
·
On-Chip Hall Sensor
4V to 30V Supply Voltage
500mA (avg) Output Sink Current
Build in Protection Diode for Reverse Power
Connecting
-20oC to 85oC Operating Temperature
Low Profile TO-94 (SIP-4L) Package
Build in Over Temperature Protection Function
ESD Rating: 300V(Machine Model)
Applications
Placing the device in a variable magnetic field, if the
magnetic flux density is larger than threshold BOP, the
pin DO will be turned low (on) and pin DOB will be
turned high (off). This output state is held until the
magnetic flux density reverses and falls below BRP,
then causes DO to be turned high (off) and DOB
turned low (on).
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·
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12V/24V Dual-Coil Brushless DC Motor/Fan
Power Supply and Switchboard
Communications Facilities
Industrial Equipment
AH278 is available in TO-94 (SIP-4L) package.
TO-94
Figure 1. Package Type of AH278
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH278
Pin Configuration
Z4 Package
(TO-94)
4
GND
3
2
DOB
DO
1
VCC
Figure 2. Pin Configuration of AH278 (Top View)
Pin Description
Pin Number
Pin Name
Function
1
VCC
Supply voltage
2
DO
Output 1
3
DOB
Output 2
4
GND
Ground
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH278
Functional Block Diagram
VCC
DO
1
2
Over-Temperature
Protection
Regulator
4
GND
Hall
Sensor
Schmitt
Trigger
Amplifier
Output
Driver
3
DOB
Figure 3. Functional Block Diagram of AH278
Ordering Information
AH278
-
Circuit Type
E1: Lead Free
Package
Z4: TO-94 (SIP-4L)
Magnetic Characteristics
A: 10 to 70Gauss
B: 100Gauss
Package
Temperature Range
TO-94
-20 to 85 oC
Part Number
Marking ID
Packing Type
AH278Z4-AE1
AH278Z4-E1
Bulk
AH278Z4-BE1
AH278Z4-E1
Bulk
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH278
Absolute Maximum Ratings (Note 1)
(TA=25oC)
Parameter
Symbol
Value
Unit
Supply Voltage
VCC
30
V
Reverse Protection Voltage
VRCC
-30
V
B
Unlimited
Gauss
500 (Note 2)
mA
600
mA
800
mA
PD
550
mW
Die to atmosphere
θJA
227
oC/W
Die to package case
θJC
49
oC/W
TSTG
-50 to 150
oC
300
V
Magnetic Flux Density
Continuous
Output Current
IO
Hold
Peak (start up)
Power Dissipation
Thermal Resistance
Storage Temperature
ESD (Machine Model)
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect
device reliability.
Note 2: Continuos output current is 300mA at 85oC.
Recommended Operating Conditions
Parameter
Supply Voltage
Operating Ambient Temperature
Symbol
Min
Max
VCC
4
28
V
85
o
TA
-20
Feb. 2007 Rev. 1. 1
Unit
C
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH278
Electrical Characteristics
(TA=25oC, VCC=24V, unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VCC=5V, IO=100mA
0.1
0.3
V
Output Saturation Voltage
VSAT1
IO=500mA
0.5
0.8
V
Output Saturation Voltage
VSAT2
IO=300mA
0.25
0.5
V
Low Supply Voltage
VCE
Output Leakage Current
IOL
VDO,VDOB=24V
0.1
10
µA
Supply Current
ICC
VCC=24V, Output Open
12.5
16
mA
tr
RL=820Ω, CL=20pF
3.0
10
µs
Output Fall Time
tf
RL=820Ω, CL=20pF
0.3
1.5
µs
Switch Time Differential
∆t
RL=820Ω, CL=20pF
3.0
10
µs
Output Rise Time
Output Zener Breakdown Voltage
VZO
60
V
Magnetic Characteristics
(TA=25oC)
Parameter
Symbol
BOP
Operating Point
Grade
Min
A
10
Typ
B
BRP
Releasing Point
Hysteresis
A
-70
B
-100
Max
Unit
70
Gauss
100
Gauss
-10
Gauss
Gauss
80
BHYS
Gauss
VDO (V)
Off-state
High
BHYS
Turn off
Turn on
Low
VSAT
On-state
N
BRP
0
BOP
S
Magnetic Flux Density (Gauss)
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH278
Magnetic Characteristics (Continued)
+24V
AH278
S
VCC
1
Marking Side
DO DOB GND
2
4
3
DO (VOUT1)
R1
820Ω
R2
N
DOB (VOUT2)
820Ω
C1
C2
20pF 20pF
Figure 4. Basic Test Circuit
DO (V)
DOB (V)
16
16
VCC
14
14
12
12
10
10
8
8
6
6
4
4
2
-40
-20
0
VSAT
20
2
VSAT
40
-40
Magnetic Flux Density B (Gauss)
VCC
-20
0
20
40
Magnetic Flux Density B (Gauss)
Figure 5. VDO vs. Magnetic Flux Density
Figure 6. VDOB vs. Magnetic Flux Density
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH278
Typical Performance Characteristics
14
80
12
60
BOP/BRP/BHYS (GS)
ICC (mA)
10
o
TA=25 C
8
6
40
20
BOP
BRP
BHYS
0
o
TA=25 C
4
-20
2
-40
0
0
5
10
15
20
5
25
10
15
20
25
VCC (V)
VCC (V)
Figure 7. ICC vs. VCC
Figure 8. BOP/BRP/BHYS vs. VCC
800
80
600
40
PD (mW)
BOP/BRP/BHYS (GS)
60
20
BOP
BRP
BHYS
VCC=24V
0
-20
400
200
-40
-60
-20
0
20
40
60
0
-25
80
o
TA ( C)
0
25
50
75
100
125
150
o
TA ( C)
Figure 9. BOP/BRP/BHYS vs. Ambient Temperature
Figure 10. PD vs. Ambient Temperature
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH278
Typical Performance Characteristics (Continued)
400
13
300
11
250
VSAT (mV)
ICC (mA)
350
12
VCC=4V
VCC=14V
VCC=24V
10
200
150
9
VCC=24V
IO=300mA
100
8
50
7
-20
0
20
40
60
0
-20
80
0
20
40
60
80
o
o
TA ( C)
TA ( C)
Figure 11. ICC vs. Ambient Temperature
Figure 12. VSAT vs. Ambient Temperature
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH278
Typical Applications
D1
AH278
VCC
DO
1
2
COIL1
COIL2
DOB GND
4
3
R1
VCC
Z1
Z2
R1: R1< (VCC-5.5V)/16mA, 0.5W (Note 3)
Z1, Z2: Zener diode, 2*VCC≤VZ≤60V
Figure 13. Typical Application Circuit with D1
Note 3: Recommended R1 for different VCC
VCC (V)
7
8
9
10
11
12
13
14
15
16
17
R1 (Ω)
0
0
0
0
0
0
470
510
560
620
680
VCC (V)
18
19
20
21
22
23
24
25
26
27
28
R1 (Ω)
750
820
820
910
1k
1k
1.1k
1.2k
1.2k
1.3k
1.3k
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
AH278
Mechanical Dimensions
TO-94
0.500(0.020)
0.700(0.028)
3.780(0.149)
4.080(0.161)
Unit: mm(inch)
45°TYP
1.400(0.055)
1.800(0.071)
0.700(0.028)
0.900(0.035)
4.980(0.196)
5.280(0.208)
0.360(0.014)
0.510(0.020)
1.850(0.073)
1.250(0.050)
Hall Sensor Location
0.380(0.015)
0.550(0.022)
0.360(0.014)
0.500(0.020)
14.900(0.587)
15.300(0.602)
1.270(0.050) TYP
3.710(0.146)
3.910(0.154)
Feb. 2007 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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