Freescale MHV5IC2215NR2 Rf ldmos wideband integrated power amplifier Datasheet

Freescale Semiconductor
Technical Data
Document Number: MHV5IC2215N
Rev. 3, 1/2007
RF LDMOS Wideband Integrated
Power Amplifier
The MHV5IC2215NR2 wideband integrated circuit is designed for base
station applications. It uses Freescale’s High Voltage (28 Volts) LDMOS IC
technology and integrates a two - stage structure. Its wideband on - chip
matching design makes it usable from 1500 to 2200 MHz. The linearity
performances cover all modulation formats for cellular applications including
TD - SCDMA.
Driver Application
• Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ1 =
164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band (1930 1990 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through
13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain — 27.5 dB
ACPR @ 885 kHz Offset — - 60 dBc in 30 kHz Bandwidth
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band (2130 2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 24 dB
ACPR @ 5 MHz Offset — - 55 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 15 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
Features
• On - Chip Matching (50 Ohm Input, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel
VRD1
VRG1
VDS1
2 Stage IC
RFin
VDS2/RFout
VGS1
Quiescent Current
Temperature Compensation
VGS2
MHV5IC2215NR2
2170 MHz, 23 dBm, 28 V
SINGLE N - CDMA, SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
16
1
CASE 978 - 03
PFP - 16
N.C.
1
16
N.C.
VRD1
2
15
VDS2/RFout
VRG1
3
14
VDS2/RFout
VDS1
4
13
VDS2/RFout
GND
5
12
VDS2/RFout
RFin
6
11
VDS2/RFout
VGS1
VGS2
7
8
10
9
VDS2/RFout
N.C.
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MHV5IC2215NR2
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Input Power
Pin
12
dBm
Symbol
Value (1)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Driver Application
(Pout = 23 dBm CW)
Unit
RθJC
°C/W
Stage 1, 28 Vdc, IDQ1 = 164 mA
Stage 2, 28 Vdc, IDQ2 = 115 mA
9.3
3.5
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
0 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
260
°C
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
W - CDMA Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm,
f = 2140 MHz, Single - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
23
24
27
dB
Gain Flatness in 60 MHz Bandwidth @ Pout = 23 dBm
f = 2110 - 2170 MHz
GF
—
0.3
0.5
dB
ACPR
—
- 56
- 54
dBc
IRL
—
- 12
- 10
dB
Adjacent Channel Power Ratio
Input Return Loss
Typical N - CDMA Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm,
f = 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
@ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Gain Flatness @ Pout = 23 dBm
f = 1930 - 1990 MHz
Adjacent Channel Power Ratio
Input Return Loss
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 23 dBm
Average Group Delay @ Pout = 23 dBm Including Output Matching
Gps
25.5
27.5
29
dB
GF
—
0.3
—
dB
ACPR
—
- 60
—
dBc
IRL
—
- 12
—
dB
Φ
—
0.2
—
°
Delay
—
1.5
—
ns
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MHV5IC2215NR2
2
RF Device Data
Freescale Semiconductor
W - CDMA DRIVER APPLICATION
1
NC
NC
16
Z13
VRD1
2
Z11
15
+
C8
VRG1
3
14
4
13
5
12
+
C7
VDS2
C6
Z12
VDS1
RF
INPUT
+
Z1
+
C5
Z2
C4
Z3
C10
Z5
Z6
Z7
Z8
Z9
Z10
RF
OUTPUT
C11
Z4
6
C9
11
C1
VGS1
7
R1
C2
R2
C3
VGS2
10
Quiescent Current
Temperature Compensation
8
Z1
Z2
Z3
Z4
Z5
Z6
Z7
NC
0.045″ x 0.1289″ Microstrip
0.0443″ x 0.0161″ Microstrip
0.0308″ x 0.0416″ x 0.03″ Taper
0.0161″ x 0.0685″ Microstrip
0.0838″ x 0.1759″ Microstrip
0.0503″ x 0.1759″ Microstrip
0.0922″ x 0.1759″ Microstrip
9
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.0105″ x 0.1200″ Microstrip
0.0559″ x 0.1145″ Microstrip
0.045″ x 0.2671″ Microstrip
0.3319″ x 0.0349″ Microstrip
0.0027″ x 2.0413″ Microstrip
0.9151″ x 0.0349″ Microstrip
Rogers 4350, 0.020″, εr = 3.5
Figure 3. MHV5IC2215NR2 Test Circuit Schematic
Table 6. MHV5IC2215NR2 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
22 pF, 50 V Chip Capacitor
06033J220GBS
AVX
C2, C3
6.8 pF, 50 V Chip Capacitors
06035J6R8BBS
AVX
C4, C7
1 μF, 35 V Tantalum Chip Capacitors
TAJA105K035R
AVX
C5, C6
330 μF, 50 V Electrolytic Chip Capacitors
MCR35V337M10X16
Multicomp
C8
0.01 μF, 50 V Chip Capacitor
0805C103K5RACTR
Kemet
C9, C10
2.7 pF, 50 V Chip Capacitors
06035J2R7BBS
AVX
C11
15 pF, 25 V Chip Capacitor
06033J150GBS
AVX
R1, R2
1 kW, 1/8 W Chip Resistors
CRCW08051000FKTA
Vishay
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
3
W - CDMA DRIVER APPLICATION
C5
C6
C4
VD2
VD1
C7
C8
C1
C9
C10
C11
C2
C3
R2
VG2
R1
VG1
MHV5IC2215, Rev. 1
Figure 4. MHV5IC2215NR2 Test Circuit Component Layout
MHV5IC2215NR2
4
RF Device Data
Freescale Semiconductor
33
0
−6
30
27
−12
Gps
−18
24
21
18
15
12
VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA
f1 = 2135 MHz, f2 = 2145 MHz, 2 x W−CDMA
10 MHz in 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
3
−60
PAE
0
−66
0.1
1
Pout, OUTPUT POWER (WATTS) AVG.
40
25_C
24
30
85_C
85_C
20
22
PAE
10
26
10
24
23
22
32 V
21
VDD = 24 V
19
0
30
2
Figure 6. Power Gain and Power Added
Efficiency versus Output Power
30
−4
28
−6
7
−8
0
−10
−12
S11
−14
VDD = 28 Vdc, Pout = 23 dBm CW
IDQ1 = 164 mA, IDQ2 = 115 mA
−21
1000
1500
2000
−14
2500
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
−16
3000
Gps, POWER GAIN (dB)
S21 (dB)
−2
14
−7
6
8
10
12
14
Figure 7. Power Gain versus Output Power
S11 (dB)
S21
4
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
28
28 V
20
0
1
IDQ1 = 164 mA
IDQ2 = 115 mA
f = 2140 MHz
25
Gps, POWER GAIN (dB)
−30_C
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
10
Figure 5. 2 - Carrier W - CDMA ACPR, IM3, Power
Gain and Power Added Efficiency
versus Output Power
Gps
21
−42
−54
50
18
0.1
−36
ACPR
−48
25_C
20
−30
IM3
6
TC = −30_C
VDD = 28 Vdc
IDQ1 = 164 mA
IDQ2 = 115 mA
f = 2140 MHz
−24
9
28
26
IM3 (dBc), ACPR (dBc)
PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL W - CDMA DRIVER APPLICATION CHARACTERISTICS
TC = −30_C
26
25_C
24
85_C
22
20
VDD = 28 Vdc, Pout = 23 dBm CW
IDQ1 = 164 mA, IDQ2 = 115 mA
Two −Tone Measurements, Center Frequency = 2140 MHz
18
1900
1950
2000
2050
2100
2150
2200
2250
2300
f, FREQUENCY (MHz)
Figure 9. Power Gain versus Frequency
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
109
MTTF (HOURS)
108
2nd Stage
107
1st Stage
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc and Pout = 23 dBm.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 10. MTTF versus Junction Temperature
MHV5IC2215NR2
6
RF Device Data
Freescale Semiconductor
f = 2170 MHz
Zload
f = 2110 MHz
f = 2110 MHz
Zin
f = 2170 MHz
Zo = 75 Ω
VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm
Zin
f
MHz
Zin
Ω
Zload
Ω
2110
75.39 - j12.39
1.03 - j0.87
2140
71.11 - j18.83
0.99 - j0.61
2170
66.07 - j22.68
0.94 - j0.35
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 11. Series Equivalent Input and Load Impedance, 2140 MHz
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
7
N - CDMA DRIVER APPLICATION
1
NC
NC
16
Z12
VRD1
2
Z10
15
+
C8
VRG1
3
14
4
13
5
12
+
C7
VDS2
C6
Z11
VDS1
RF
INPUT
+
Z1
+
C5
Z2
C4
Z3
C10
Z5
Z6
Z7
Z8
Z9
RF
OUTPUT
C11
Z4
6
C9
11
C12
C1
VGS1
7
R1
C2
R2
C3
VGS2
10
Quiescent Current
Temperature Compensation
8
Z1
Z2
Z3
Z4
Z5
Z6
Z7
NC
0.045″ x 0.1289″ Microstrip
0.0443″ x 0.0161″ Microstrip
0.0308″ x 0.0416″ x 0.03″ Taper
0.0161″ x 0.0685″ Microstrip
0.0838″ x 0.1759″ Microstrip
0.1425″ x 1.7590″ Microstrip
0.0105″ x 0.1200″ Microstrip
9
Z8
Z9
Z10
Z11
Z12
PCB
0.0559″ x 0.1145″ Microstrip
0.0450″ x 0.2671″ Microstrip
0.3319″ x 0.0349″ Microstrip
0.0027″ x 2.0413″ Microstrip
0.9151″ x 0.0349″ Microstrip
Rogers 4350, 0.020″, εr = 3.5
Figure 12. MHV5IC2215NR2 Test Circuit Schematic
Table 7. MHV5IC2215NR2 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
22 pF, 25 V Chip Capacitor
06033J220GBS
AVX
C2, C3
6.8 pF, 50 V Chip Capacitors
06035J6R8BBS
AVX
C4, C7
1 μF, 35 V Tantalum Chip Capacitors
TAJA105K035R
AVX
C5, C6
330 μF, 50 V Electrolytic Chip Capacitors
MCR35V337M10X16
Multicomp
C8
0.01 μF, 50 V Chip Capacitor
0805C103K5RACTR
Kemet
C9, C10
2.4 pF, 50 V Chip Capacitors
06035J2R4BBS
AVX
C11
15 pF, 25 V Chip Capacitor
06033J150GBS
AVX
C12
1.5 pF, 50 V Chip Capacitor
06035J1R5BBS
AVX
R1, R2
1 kW, 1/8 W Chip Resistors
CRCW08051000FKTA
Vishay
MHV5IC2215NR2
8
RF Device Data
Freescale Semiconductor
N - CDMA DRIVER APPLICATION
C5
C6
C4
VD2
VD1
C8
C7
C1
C12
C9
C10
C11
C2
C3
R2
VG2
R1
VG1
MHV5IC2215, Rev. 1
Figure 13. MHV5IC2215NR2 Test Circuit Component Layout
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
9
44
28
Gps
24
−30
20
−36
16
−42
12
−54
PAE
4
−60
0
−66
0.1
1
Pout, OUTPUT POWER (WATTS) AVG.
40
Gps, POWER GAIN (dB)
29
30
28
20
VDD = 28 Vdc
IDQ1 = 145 mA
IDQ2 = 105 mA
f = 1960 MHz
10
0
1
10
Pout, OUTPUT POWER (WATTS) CW
Figure 15. Power Gain and Power Added
Efficiency versus Output Power
30
32
PAE, POWER ADDED EFFICIENCY (%)
Gps
30
26
0.1
10
Figure 14. 2 - Carrier N - CDMA ACPR, IM3, Power
Gain and Power Added Efficiency
versus Output Power
50
27
−48
ACPR
IM3
8
31
PAE
−18
−24
−2
S21
24
−4
16
−6
8
−8
0
−10
−8
−16
−12
VDD = 28 Vdc
Pout = 23 dBm CW
IDQ1 = 145 mA
IDQ2 = 105 mA
−24
1000
1500
S11 (dB)
32
−6
−12
IM3 (dBc), ACPR (dBc)
40
36
0
VDD = 28 Vdc, IDQ1 = 145 mA, IDQ2 = 105 mA, f1 = 1955 MHz
f2 = 1965 MHz, 2 x N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @
0.01% Probability (CCDF)
S21 (dB)
PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL N - CDMA DRIVER APPLICATION CHARACTERISTICS
S11
2000
−14
2500
−16
3000
f, FREQUENCY (MHz)
Figure 16. Broadband Frequency Response
MHV5IC2215NR2
10
RF Device Data
Freescale Semiconductor
Zo = 50 Ω
Zin
f = 1930 MHz
f = 1990 MHz
f = 1930 MHz
Zload
f = 1990 MHz
VDD = 28 Vdc, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm
Zin
f
MHz
Zin
Ω
Zload
Ω
1930
45.98 + j19.10
2.18 - j0.88
1960
53.88 + j20.43
2.15 - j1.18
1990
62.55 + j18.70
2.12 - j1.49
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 17. Series Equivalent Input and Load Impedance, 1960 MHz
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
11
Table 8. Common Source Scattering Parameters (VDC = 28 V, TC = 25_C, 50 ohm system)
IDQ1 = 164 mA, IDQ2 = 115 mA
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
1000
0.68244
21.958
3.27363
- 46.706
0.00073
9.794
0.98732
153.093
1200
0.60173
- 30.075
10.23125
- 119.333
0.00072
13.436
1.00029
126.919
1400
0.47213
- 92.332
13.7957
123.921
0.0007
- 2.999
0.94139
106.192
1600
0.39882
175.345
13.86577
44.495
0.00088
- 45.669
0.93605
87.096
1800
0.35107
59.2
16.61251
- 38.246
0.00141
- 13.097
0.91624
65.161
2000
0.23689
- 70.587
17.30592
- 133.04
0.0018
- 35.967
0.88891
37.263
2200
0.21492
162.587
17.05916
121.911
0.00324
- 62.618
0.56059
- 24.504
2400
0.30222
113.328
6.44934
- 14.639
0.00275
- 134.469
0.69074
84.748
2600
0.46271
74.437
1.40717
- 89.824
0.00149
- 169.397
0.92384
34.554
2800
0.60247
39.529
0.39763
- 141.044
0.00109
167.909
0.958
6.133
3000
0.69273
8.867
0.10191
- 174.046
0.00129
122.208
0.9351
- 18.125
IDQ1 = 164 mA, IDQ2 = 345 mA
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
1000
0.67537
21.709
5.31667
- 50.942
0.0008
6.129
0.99279
152.416
1200
0.59017
- 29.975
15.91709
- 129.84
0.00067
- 0.12
0.99768
124.892
1400
0.46708
- 92.31
19.32081
119.077
0.00075
- 10.343
0.91612
105.353
1600
0.39635
174.623
20.10313
41.013
0.00083
- 45.427
0.91179
87.084
1800
0.32171
55.947
23.76068
- 42.642
0.00135
- 6.07
0.89001
65.729
2000
0.2053
- 76.58
24.4731
- 136.766
0.0017
- 34.308
0.86052
38.165
2200
0.20173
154.548
23.13058
117.16
0.00282
- 62.743
0.47971
- 18.382
2400
0.29085
112.112
8.78893
- 12.308
0.00276
- 133.95
0.65353
80.165
2600
0.46015
74.095
2.0309
- 88.099
0.00145
- 172.129
0.91226
34.199
2800
0.60229
39.22
0.58259
- 140.332
0.00109
165.352
0.95453
6.049
3000
0.69238
8.662
0.15083
- 173.655
0.00114
127.091
0.93394
- 18.148
IDQ1 = 164 mA, IDQ2 = 500 mA
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
1000
0.6711
21.546
5.75013
- 53.329
0.0007
24.45
0.99347
152.201
1200
0.58525
- 30.018
16.76169
- 134.625
0.00077
- 1.375
0.9925
124.548
1400
0.46378
- 92.504
19.69001
116.925
0.00076
5.296
0.91107
105.394
1600
0.39336
174.232
20.76629
39.298
0.0009
- 40.621
0.90699
87.053
1800
0.31114
55.471
24.51619
- 44.522
0.00124
- 10.794
0.88668
65.947
2000
0.19301
- 78.069
25.16732
- 138.656
0.00189
- 36.619
0.85513
38.413
2200
0.19638
152.604
23.41998
115.327
0.00305
- 62.675
0.46723
- 15.877
2400
0.28869
111.542
9.01024
- 12.58
0.00259
- 134.95
0.64185
79.222
2600
0.45971
73.791
2.10623
- 88.735
0.00142
- 166.566
0.90861
34.114
2800
0.60251
39.001
0.60593
- 141.146
0.00107
168.738
0.95346
6.03
3000
0.69282
8.463
0.15674
- 174.755
0.00121
124.35
0.93359
- 18.226
MHV5IC2215NR2
12
RF Device Data
Freescale Semiconductor
TD - SCDMA CHARACTERIZATION
1
NC
NC
16
Z13
VRD1
2
Z11
15
+
C8
VRG1
3
14
4
13
5
12
+
C7
VDS2
C6
Z12
VDS1
RF
INPUT
+
Z1
+
C5
Z2
C4
Z3
C10
Z5
Z6
Z7
Z8
Z9
Z10
RF
OUTPUT
C11
Z4
6
11
C9
C1
VGS1
7
R1
C2
R2
C3
VGS2
10
Quiescent Current
Temperature Compensation
8
Z1
Z2
Z3
Z4
Z5
Z6
Z7
NC
0.045″ x 0.1289″ Microstrip
0.0443″ x 0.0161″ Microstrip
0.0308″ x 0.0416″ x 0.03″ Taper
0.0161″ x 0.0685″ Microstrip
0.0838″ x 0.1759″ Microstrip
0.089″ x 0.1759″ Microstrip
0.054″ x 0.1759″ Microstrip
9
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.0105″ x 0.1200″ Microstrip
0.0559″ x 0.1145″ Microstrip
0.045″ x 0.2671″ Microstrip
0.7775″ x 0.0349″ Microstrip
2.0413″ x 0.0027″ Microstrip
0.4697″ x 0.0349″ Microstrip
Rogers 4350, 0.020″, εr = 3.5
Figure 18. MHV5IC2215NR2 Test Circuit Schematic — TD - SCDMA
Table 9. MHV5IC2215NR2 Test Circuit Component Designations and Values — TD - SCDMA
Part
Description
Part Number
Manufacturer
C1
22 pF, 50 V Chip Capacitor
06033J220GBS
AVX
C2, C3
6.8 pF, 50 V Chip Capacitors
06035J6R8BBS
AVX
C4, C7
1 μF, 35 V Tantalum Chip Capacitors
TAJA105K035R
AVX
C5, C6
330 μF, 50 V Electrolytic Chip Capacitors
MCR35V337M10X16
Multicomp
C8
0.01 μF, 50 V Chip Capacitor
0805C103K5RACTR
Kemet
C9, C10
2.7 pF, 50 V Chip Capacitors
06035J2R7BBS
AVX
C11
15 pF, 25 V Chip Capacitor
06033J150GBS
AVX
R1, R2
1 kW, 1/8 W Chip Resistors
CRCW08051000FKTA
Vishay
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
13
C5
C6
C4
VD2
VD1
C7
C8
C1
C9
C10
C11
C2
C3
R2
VG2
R1
VG1
MHV5IC2215, Rev. 1
Figure 19. MHV5IC2215NR2 Test Circuit Component Layout — TD - SCDMA
MHV5IC2215NR2
14
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
−20
−25
ALT/ACPR (dBc)
−30
3.5
PAE
3
−35
2.5
−40
2
Adj −U
−45
1.5
Alt−L
Adj −L
−50
1
−55
0.5
Alt−U
−60
PAE, POWER ADDED EFFICIENCY (%)
4
3−Carrier TD−SCDMA
VD1 = VD2 = 28 V
IDQ1 = 140 mA, IDQ2 = 125 mA
f = 2017.5 MHz
0
15
19
17
21
23
27
25
Pout, OUTPUT POWER (WATTS) AVG.
Figure 20. 3 - Carrier TD - SCDMA ACPR, ALT and
Power Added Efficiency versus Output Power
−20
−25
ALT/ACPR (dBc)
−30
3.5
PAE
3
−35
2.5
−40
2
Adj −L
Adj −U
−45
1.5
−50
1
Alt−U
Alt−L
−55
0.5
−60
PAE, POWER ADDED EFFICIENCY (%)
4
6−Carrier TD−SCDMA
VD1 = VD2 = 28 V
IDQ1 = 140 mA, IDQ2 = 125 mA
f = 2017.5 MHz
0
15
17
19
21
23
27
25
Pout, OUTPUT POWER (WATTS) AVG.
Figure 21. 6 - Carrier TD - SCDMA ACPR, ALT and
Power Added Efficiency versus Output Power
TD - SCDMA TEST SIGNAL
−30
−30
1.28 MHz
Channel BW
−40
−50
−50
−60
−70
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
−ALT2 in
1.28 MHz BW
−3.2 MHz Offset
−80
−90
−100
−ALT2 in
1.28 MHz BW
−3.2 MHz Offset
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
−100
−110
−120
(dBm)
(dBm)
−90
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
−60
−70
−80
1.28 MHz
Channel BW
−40
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
−110
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
−ALT1 in
1.28 MHz BW
−1.6 MHz Offset
−130
Center 2.0175 GHz
1.5 MHz
Span 15 MHz
f, FREQUENCY (MHz)
Figure 22. 3 - Carrier TD - SCDMA Spectrum
−120
−ALT1 in
1.28 MHz BW
−1.6 MHz Offset
−130
Center 2.0175 GHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
2.5 MHz
Span 25 MHz
f, FREQUENCY (MHz)
Figure 23. 6 - Carrier TD - SCDMA Spectrum
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
15
Zo = 50 Ω
f = 2010 MHz
Zin
f = 2024 MHz
f = 2010 MHz
Zload
f = 2024 MHz
VDD = 28 Vdc, IDQ1 = 140 mA, IDQ2 = 125 mA
f
MHz
Zin
W
Zload
W
2010
65.31 + j15.57
1.34 - j1.00
2017
67.01 + j14.27
1.36 - j1.17
2024
68.60 + j12.82
1.39 - j1.30
Zin
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 24. Series Equivalent Input and Load Impedance — TD - SCDMA
MHV5IC2215NR2
16
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
h X 45 _
A
E2
1
14 x e
16
D
e/2
D1
8
9
E1
8X
bbb
M
B
BOTTOM VIEW
E
C B
S
ÉÉ
ÇÇÇ
ÇÇÇ
ÉÉ
b1
Y
c
A A2
c1
b
DATUM
PLANE
SEATING
PLANE
H
M
ccc C
q
W
GAUGE
PLANE
W
L
C A
SECT W - W
L1
C
aaa
A1
1.000
0.039
S
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
b
b1
c
c1
e
h
q
aaa
bbb
ccc
MILLIMETERS
MIN
MAX
2.000
2.300
0.025
0.100
1.950
2.100
6.950
7.100
4.372
5.180
8.850
9.150
6.950
7.100
4.372
5.180
0.466
0.720
0.250 BSC
0.300
0.432
0.300
0.375
0.180
0.279
0.180
0.230
0.800 BSC
−−−
0.600
0_
7_
0.200
0.200
0.100
DETAIL Y
CASE 978 - 03
ISSUE C
PFP- 16
MHV5IC2215NR2
RF Device Data
Freescale Semiconductor
17
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1949: Mounting Method for the MHVIC910HR2 (PFP - 16) and Similar Surface Mount Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
3
Jan. 2007
Description
• Added “including TD - SCDMA” to data sheet description paragraph, p. 1
• Updated verbiage in Typical N - CDMA Tests table, p. 2
• Corrected ordering of Z11 and Z13 numbers in Z list, Fig. 3, Test Circuit Schematic and updated Part
Numbers in Table 6, Component Designations and Values (for W - CDMA), to RoHS compliant part
numbers, p. 3
• Adjusted scale for Fig. 6, Power Gain and Power Added Efficiency versus Output Power, to better match
the device’s capabilities, p. 5
• Removed lower voltage tests from Fig. 7, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 5
• Replaced Fig. 10, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 6
• Corrected ordering of Z10 and Z11 numbers in Z list, Fig. 12, Test Circuit Schematic and updated Part
Numbers in Table 7, Component Designations and Values (for N - CDMA), to RoHS compliant part
numbers, p. 8
• Adjusted scale for Fig. 15, Power Gain and Power Added Efficiency versus Output Power, to better match
the device’s capabilities, p. 10
• Updated Zin values and chart in Fig. 11, W - CDMA Series Impedance, p. 7, and in
Fig. 17, N - CDMA Series Impedance, p. 11
• Added TD - SCDMA test circuit schematic, component designations and values, component layout, typical
characteristic curves, test signal and series impedance, p. 13 - 16
• Added Product Documentation and Revision History, p. 18
MHV5IC2215NR2
18
RF Device Data
Freescale Semiconductor
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MHV5IC2215NR2
Document
Number:
RF
Device
Data MHV5IC2215N
Rev. 3, 1/2007
Freescale
Semiconductor
19