3 Volt, General Purpose Low Noise High fT Silicon Transistor MP4T6325 Series SOT-23 Features • • • • • Low Voltage Operation (3 - 5V) High fT (11 GHz) Low Noise Figure with 1-5 mA Current Inexpensive Available on Tape and Reel Description The MP4T6325 series of low voltage silicon bipolar transistors provide low noise figure at a bias of 3-5 volts and collector current of 1 to 5 mA. These inexpensive surface mount transistors are useful for low noise amplifiers and VCOs in portable battery operated RF systems from VHF through 2.5 GHz. The MP4T6325 series has high fT (11 GHz) and provides 1.5 dB noise figure with 1-5 mA current and 3 volts bias at 1 GHz. These transistors also have low phase noise when used in 3-5 volt low power battery operated VCOs through 2.5 GHz. SOT-143 Chip The MP4T6325 series are inexpensive transistors useful for portable battery operated RF systems that require low current drain from 3-5 volts DC supplies. The MP4T6325 family of transistors is available in chip (MP4T632500), SOT-23 (MP4T632533), SOT-143 (MP4T632539) and in Micro-X (MP4T632535) packages. Surface mount packages are available on tape and reel. Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 1 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Volt, General Purpose Low Noise High fT Silicon Transistor MP4T6325 Series Electrical Specifications at 25°C Symbol fT 2 |S21E| NF GTU (max) Gain Bandwidth Product Insertion Power Gain Noise Figure Unilateral Gain MAG Maximum Available Gain P1dB Power Out at 1dB Compression RTH (J-A) RTH (J-C) 1. Parameters Thermal Resistance Thermal Resistance Test Conditions VCE = 3V IC = 10 mA VCE = 3V IC = 10 mA f = 1 GHz f = 2 GHz VCE = 3V IC = 2 mA f = 1 GHz VCE = 3V IC = 10 mA f = 1 GHz f = 2 GHz VCE = 3V IC = 10 mA f = 2 GHz VCE = 3V IC = 15 mA f = 900MHz Junction/ Ambient Junction/ Case Units MP4T632500 Chip 11 typ. MP4T632533 SOT-23 10 typ. MP4T632535 Micro-X 11 typ. MP4T632539 SOT-143 11 typ. 12 typ. 8 typ. 11 typ. 7 typ. 12 typ. 8 typ. 11 typ. 7 typ. 1.5 typ. 1.6 typ. 1.5 typ. 1.6 typ. 14.5 typ. 9 typ. 13 typ. 8 typ. 14.5 typ. 9 typ. 13 typ. 8 typ. 10 typ. 9 typ. 10 typ. 9 typ. °C/W 8 typ. 8 typ. 650 typ. 8 typ. 500 typ. 8 typ. 625 typ. °C/W 70 max. 200 typ. 200 typ. 200 typ. GHz dB dB dB dB dBm 1 Junction/Heat Sink R TH (J-C) Maximum Ratings at 25°C Parameter Collector Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Chips or Ceramic Packages Plastic Packages Power Dissiapation 1. Symbol VCBO VCEO VEBO IC Tj Maximum Rating 8V 6V 1.5 V 25 mA 200°C TSTG -65°C to +200°C -65°C to +125°C 150mW1 PD See Typical Performance Curves for power derating. Electrical Specifications at 25°C Parameters Collector Cut-off Current Conditions VCB = 5 V IE = 0 VEB = 1 V IC = 0 VCE = 3 V IC = 3 mA VCB = 3 V IE = 0 f = 1 MHz Emitter Cut-off Current Forward Current Gain Collector Base Junction Capacitance Symbol ICBO Min. Typ. Max. 100 Units nA IEBO 1 µA hFE 20 90 200 COB 0.52 0.70 pF Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 2 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Volt, General Purpose Low Noise High fT Silicon Transistor MP4T6325 Series MP4T632535 Typical Scattering Parameters in the MIcro-X Package VCE = 3 Volts, IC = 5 mA Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.486 0.338 0.294 0.284 0.283 0.281 0.290 0.320 0.333 0.358 0.382 0.405 Angle -80.5 -128.0 -156.3 169.8 160.9 144.6 132.5 119.4 106.6 94.9 82.7 72.7 Mag. 7.164 4.508 3.219 2.533 2.123 1.835 1.678 1.546 1.434 1.354 1.290 1.238 S21E Angle 119.8 93.4 78.1 66.1 55.5 46.3 36.8 28.3 18.9 11.5 4.0 -4.0 Mag. 0.077 0.112 0.144 0.179 0.210 0.240 0.272 0.301 0.323 0.349 0.375 0.397 S12E Angle 56.6 51.9 50.2 47.8 44.7 41.8 36.7 33.2 29.0 25.1 21.4 17.7 Mag 0.628 0.424 0.345 0.305 0.280 0.266 0.256 0.254 0.245 0.241 0.246 0.255 S22E Angle -45.8 -58.8 -65.9 -74.9 -83.1 -90.8 -103.7 -113.8 -125.4 -135.9 -146.1 -158.0 VCE = 3 Volts, IC = 10 mA Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.326 0.288 0.288 0.305 0.319 0.330 0.335 0.372 0.385 0.417 0.445 0.468 Angle -116.9 -158.6 174.6 160.8 145.8 131.0 121.4 110.2 99.4 88.6 77.1 67.4 Mag. 8.628 4.808 3.337 2.608 2.172 1.863 1.696 1.559 1.444 1.361 1.294 1.236 S21E Angle 108.6 86.7 73.4 62.3 52.2 43.2 34.5 25.9 16.9 9.4 3.2 -6.0 Mag. 0.060 0.098 0.135 0.170 0.204 0.234 0.268 0.299 0.322 0.350 0.379 0.401 S12E Angle 60.9 60.0 57.7 53.7 49.7 45.8 41.0 36.8 32.7 28.3 24.1 20.3 Mag 0.505 0.351 0.302 0.275 0.256 0.245 0.245 0.245 0.240 0.237 0.242 0.253 S22E Mag. 9.912 5.355 3.679 2.875 2.377 2.029 1.834 1.653 1.552 1.456 1.377 1.312 S21E Angle 104.1 84.5 72.6 61.7 52.0 43.0 34.6 26.7 17.3 10.0 2.2 -5.5 Mag. 0.053 0.092 0.132 0.165 0.200 0.230 0.265 0.290 0.317 0.344 0.372 0.392 S12E Angle 65.0 64.6 60.8 56.6 52.2 47.7 42.7 38.9 34.1 29.7 25.2 21.3 Mag 0.428 0.295 0.263 0.236 0.222 0.215 0.218 0.220 0.218 0.213 0.212 0.218 Angle -48.5 -56.2 -61.8 -71.7 -80.2 -88.1 -101.8 -112.9 -125.3 -136.8 -148.0 -160.2 VCE = 3 Volts, IC = 15 mA Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.286 0.278 0.287 0.317 0.334 0.354 0.355 0.382 0.408 0.440 0.471 0.492 Angle -136.7 -173.6 168.5 149.8 135.8 121.6 112.4 100.2 92.3 82.1 71.3 62.2 S22E Angle -50.5 -55.5 -60.3 -70.3 -77.5 -84.3 -97.2 -103.8 -117.6 -127.1 -137.0 -147.9 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 3 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Volt, General Purpose Low Noise High fT Silicon Transistor MP4T6325 Series Typical Performance Curves (MP4T632535) NOISE FIGURE and ASSOCIATED GAIN at VCE = 3 V, 1 GHz vs COLLECTOR CURRENT POWER DERATING CURVES 10 160 NOISE FIGURE (dB) POWER DISSIPATION (mW) 120 100 80 M P4T632533, 39 (S O T -2 3 , 1 4 3 ) F R E E A I R 60 M P 4 T 6 3 2 5 3 5 (M IC R O -X ) 40 ASSOCIATED GAIN (dB) 9 140 7 6 AS SO C I AT E D G AI N 5 4 N O IS E F IG U R E (50 O hm s ) 3 2 1 M P4T 63250 0 (C H IP ) O N I N F IN I T E H E A T S I N K 20 8 NF 0 0 1 0 25 50 75 100 125 150 175 (O P T) 10 10 0 C O L L E C T O R C U R R E N T (m A) A M B I E N T T E M P E R A T U R E (C ) GAIN vs FREQUENCY at VCE=3 V and IC = 10 mA COLLECTOR-BASE CAPACITANCE (COB) vs COLLECTOR-BASE VOLTAGE 16 0.65 GAIN (dB) 12 COLL.-BASE CAPACITANCE (pF) 14 G T U (M AX ) 10 8 |S 2 1E |2 6 4 2 0 1 0 .6 0.55 0 .5 0.45 0 .4 10 1 F R E Q U E N C Y (G H z) 10 C O L L E C T O R -B ASE VO L T AG E (Vo lts) GAIN BANDWIDTH PRODUCT (fT ) vs COLLECTOR CURRENT at VCE=3 V GAIN vs COLLECTOR CURRENT at 2 GHz, VCE=3 V 12 10 10 8 GAIN (dB) GAIN BANDWIDTH (GHz) 12 6 4 M AG 8 G T U (M AX ) |S 2 1 E |2 6 4 2 2 0 1 10 C O L L E C T O R C U R RE N T (m A) 100 0 1 10 C O L L E C T O R C U R R E N T (m A) Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 4 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 10 0 3 Volt, General Purpose Low Noise High fT Silicon Transistor MP4T6325 Series Typical Performance Curves (MP4T632535) Cont. DC CURRENT GAIN (hFE) vs COLLECTOR CURRENT at VCE = 3 V 1 00 DC CURRENT GAIN 90 80 70 60 50 40 0 5 10 15 20 25 C O L L E C T O R C U R R E N T (m A ) OUTPUT POWER at 1 dB COMPRESSION POINT vs COLLECTOR CURRENT VCE=3V 12 10 POUT - 1dB (dBm) f = 90 0 M H z 8 6 f = 2 GH z 4 2 0 5 10 15 20 25 30 C O L L E C T O R C U R R E N T (m A) Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 5 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Volt, General Purpose Low Noise High fT Silicon Transistor MP4T6325 Series Case Styles Chip - MP4T632500 MP4T632500 DIM. A B C D BASE INCHES (Nominal) 0.013 0.013 0.0016 0.0045 MM (Nominal) 0.35 0.35 0.040 0.11 DIM. A B C D E F G H J K L INCHES MIN. MAX. 0.048 0.008 0.040 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.037 typical 0.075 typical 0.103 0.024 MILLIMETERS MIN. MAX. 1.22 0.20 1.00 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 0.95 typical 1.90 typical 2.60 0.60 DIM. M N GRADIENT 10° max. 1 2° . . . 30° B D THICKNESS EMITTER A C 2 PLCS. SOT-23 - MP4T632533 MP4T632533 F N A D C olle c tor B M G K L H B a se E J C E m itte r NOTE: 1. Applicable on all sides Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 6 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Volt, General Purpose Low Noise High fT Silicon Transistor MP4T6325 Series Case Styles (Con’t) Micro-X - MP4T632535 MP4T632535 Emitter F 4 PLCS. E H Collector INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45° MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.046 0.56 3.81 0.08 0.15 45° DIM. A B C D E F G H J K L M INCHES MIN. MAX. 0.044 0.044 0.040 0.030 0.035 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.075 typical 0.075 typical 0.103 0.024 MILLIMETERS MIN. MAX. 1.10 1.10 1.00 0.75 0.90 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 1.90 typical 1.90 typical 2.6 0.6 DIM. N P GRADIENT 10° max. 1 2° . . . 30° DIM. A B C D E F G H Base B Emitter A C D G SOT-143 - MP4T632539 MP4T632539 B a se E m itte r G P A J B N H L M E D F C K C olle c tor E m itte r NOTE: 1. Applicable on all sides Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 7 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Volt, General Purpose Low Noise High fT Silicon Transistor MP4T6325 Series Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 8 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440