AOSMD AO4407A P-channel enhancement mode field effect transistor Datasheet

AO4407A
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4407A uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications. Standard Product
AO4407A is Pb-free (meets ROHS & Sony 259
specifications).
VDS = -30V
(VGS = -10V)
ID = -12A
RDS(ON) < 11mΩ (VGS = -20V)
RDS(ON) < 13mΩ (VGS = -10V)
RDS(ON) < 38mΩ (VGS = -10V)
UIS TESTED!
RG, CISS, COSS, CRSS TESTED!
D
SOIC-8
Top View
S
D
S
D
S
D
G
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
VDS
Drain-Source Voltage
-30
VGS
±25
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
TA=70°C
Pulsed Drain Current
ID
IDM
B
-12
-9.2
-10
-7.4
-60
Avalanche Current G
IAR
26
Repetitive avalanche energy L=0.3mH G
EAR
101
Power Dissipation
A
TA=25°C
PD
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
Alpha & Omega Semiconductor, Ltd.
RθJA
RθJL
V
A
mJ
3.1
1.7
2.0
1.1
-55 to 150
Typ
32
60
17
Units
V
Max
40
75
24
W
°C
Units
°C/W
°C/W
°C/W
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AO4407A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = -250µA, VGS = 0V
-30
-10
TJ = 55°C
-50
Gate-Body leakage current
VDS = 0V, VGS = ±25V
VGS(th)
Gate Threshold Voltage
VDS = VGS ID = -250µA
-1.7
ID(ON)
On state drain current
VGS = -10V, VDS = -5V
-60
nA
-3
V
8.5
11
11.5
15
10
13
VGS = -5V, ID = -10A
27
38
VDS = -5V, ID = -10A
21
TJ=125°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
IS = -1A,VGS = 0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VGS = -10V, ID = -12A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
A
-0.7
2060
VGS=0V, VDS=-15V, f=1MHz
VGS=-10V, VDS=-15V, ID=-12A
VGS=-10V, VDS=-15V, RL=1.25Ω,
RGEN=3Ω
mΩ
S
-1
V
-3
A
2600
pF
370
pF
295
VGS=0V, VDS=0V, f=1MHz
Gate Drain Charge
tD(on)
µA
±100
RDS(ON)
Output Capacitance
Units
-2.3
VGS = -20V, ID = -12A
Coss
Max
V
VDS = -30V, VGS = 0V
IGSS
IS
Typ
pF
2.4
3.6
Ω
30
39
nC
4.6
nC
10
nC
11
ns
9.4
ns
24
ns
12
trr
Body Diode Reverse Recovery Time
IF=-12A, dI/dt=100A/µs
30
Qrr
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
22
ns
40
ns
nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C.
Rev3: Jan 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4407A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
-10V
VDS= -5V
-6V
60
-5V
-ID(A)
-ID (A)
60
-4.5V
40
40
-4V
125°C
20
20
25°C
VGS= -3.5V
0
0
0
1
2
3
4
5
0
0.5
40
1.5
2
2.5
3
3.5
4
4.5
5
1.6
Normalized On-Resistance
VGS=-5V
30
RDS(ON) (mΩ)
1
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Figure 1: On-Region Characteristics
20
VGS=-10V
10
VGS=-20V
ID=-12A
1.4
VGS=-10V
ID=-12A
1.2
VGS=-5V
ID=-10A
1.0
VGS=-20V
0
0
4
0.8
I12
dI/dt=100A/µs
20
F=-6.5A,16
8
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
ID=-12A
1E+00
25
1E-01
20
-IS (A)
RDS(ON) (mΩ)
25
125°C
1E-02
125°C
1E-03
15
25°C
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS
OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-04
25°C
OUT OF 10
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1E-05
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1E-06
5
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4407A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
Ciss
Capacitance (pF)
-VGS (Volts)
2500
VDS=-15V
ID=-12A
8
6
4
2
2000
1500
1000
Coss
500
Crss
0
0
0
5
10
15
20
25
30
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
30
TJ(Max)=150°C
TA=25°C
10µs
10
100µs
1
Power (W)
1ms
-ID (Amps)
25
1000
100
10ms
RDS(ON) limited
100ms
0.1
TJ(Max)=150°C
TA=25°C
0.1
1
IF=-6.5A, dI/dt=100A/µs
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
1
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
-VDS (Volts)
10
100
10s
DC
0.01
ZθJA Normalized Transient
Thermal Resistance
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
0.01
Ton
FUNCTIONS AND RELIABILITY WITHOUT
T
SingleNOTICE.
Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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