APT5014BFLL
APT5014SFLL
500V 35A 0.140Ω
POWER MOS 7
R
FREDFET
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
TO-247
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
D3PAK
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT5014BFLL_SFLL
UNIT
500
Volts
Drain-Source Voltage
35
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
403
Watts
Linear Derating Factor
3.22
W/°C
PD
TJ,TSTG
140
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
35
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 17.5A)
TYP
MAX
Volts
0.140
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
6-2004
Characteristic / Test Conditions
050-7025 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
Ciss
APT5014BFLL_SFLL
Characteristic
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
C rss
Reverse Transfer Capacitance
f = 1 MHz
Qg
3
Total Gate Charge
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 550V
tf
ID = 35A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
325
VDD = 333V, VGS = 15V
249
ID = 35A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
3
RG = 1.6Ω
Eon
UNIT
pF
50
72
20
36
11
6
23
ID = 35A @ 25°C
Turn-off Delay Time
MAX
3261
704
VDD = 550V
Rise Time
td(off)
TYP
VGS = 10V
Qgs
tr
MIN
µJ
545
VDD = 333V VGS = 15V
ID = 35A, RG = 5Ω
288
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
IS
ISM
VSD
dv/
MIN
TYP
MAX
35
Continuous Source Current (Body Diode)
Amps
Pulsed Source Current
1
(Body Diode)
140
Diode Forward Voltage
2
(VGS = 0V, IS = -35A)
1.3
Volts
15
V/ns
Peak Diode Recovery
dt
UNIT
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -35A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
525
Q rr
Reverse Recovery Charge
(IS = -35A, di/dt = 100A/µs)
Tj = 25°C
1.6
Tj = 125°C
6.0
IRRM
Peak Recovery Current
(IS = -35A, di/dt = 100A/µs)
Tj = 25°C
13
Tj = 125°C
21
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.31
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.25
0.7
0.20
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7025 Rev C
6-2004
0.35
0.15
0.3
0.10
t1
t2
0.05
0
0.1
Duty Factor D = t1/t2
SINGLE PULSE
Peak TJ = PDM x ZθJC + TC
0.05
10-5
10-4
10-3
°C/W
4 Starting Tj = +25°C, L = 2.12mH, RG = 25Ω, Peak IL = 35A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -35A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
UNIT
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT5014BFLL_SFLL
100
RC MODEL
Junction
temp. (°C)
0.119
0.0135F
Power
(watts)
0.191
0.319F
Case temperature. (°C)
ID, DRAIN CURRENT (AMPERES)
15 &10V
8V
80
60
7V
6.5V
20
6V
20
5.5V
5V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
80
60
40
TJ = +125°C
TJ = +25°C
20
TJ = -55°C
0
1
2
3
4
5
6
7
8
9
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
30
25
20
15
10
5
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
1.10
VGS=10V
1.05
VGS=20V
1.0
0.95
0.90
0
1.10
1.05
1.00
0.95
0.90
0.85
-50
1.2
2.5
I
D
V
= 17.5A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
NORMALIZED TO
= 10V @ 17.5A
GS
1.15
1.15
35
0
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
6-2004
0
1.2
050-7025 Rev C
ID, DRAIN CURRENT (AMPERES)
100
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
Typical Performance Curves
APT5014BFLL_SFLL
10,000
140
Ciss
50
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
= 35A
14
12
VDS=100V
10
VDS=250V
8
VDS=400V
6
4
2
0
0
td(off)
TJ =+150°C
TJ =+25°C
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
= 333V
DD
R
G
= 5Ω
T = 125°C
V
DD
R
G
= 333V
= 5Ω
T = 125°C
J
30
L = 100µH
20
tf
L = 100µH
50
tr and tf (ns)
40
40
30
20
tr
td(on)
0
1000
10
10
0
30
40
50
60
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
SWITCHING ENERGY (µJ)
50
J
10
6-2004
100
60
20
30
40
50
60
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
J
EON includes
diode reverse recovery.
600
Eon
400
200
Eoff
10
I
DD
D
20
= 333V
= 35A
T = 125°C
J
L = 100µH
0
10
V
1200
T = 125°C
800
0
1400
= 333V
= 5Ω
20
30
40
50
60
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
SWITCHING ENERGY (µJ)
td(on) and td(off) (ns)
50
050-7025 Rev C
200
70
60
0
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
40
60
80
100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
100
10
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
D
Coss
10mS
1
5
10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
1,000
Eoff
L = 100µH
E ON includes
1000
diode reverse recovery.
800
Eon
600
400
200
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT5014BFLL_SFLL
Gate Voltage
10 %
90%
T = 125 C
J
td(on)
Gate Voltage
td(off)
tr
Drain Voltage
90%
5%
T = 125 C
J
Drain Current
90%
tf
10 %
10%
0
Drain Voltage
Switching Energy
Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
APT30DF60
IC
V DD
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7025 Rev C
0.46 (.018)
0.56 (.022) {3 Plcs}
6-2004
3.50 (.138)
3.81 (.150)