IXYS DGS20-025A Gallium arsenide schottky rectifier Datasheet

DGS 20-022A
DGS 20-025A
DGSK 40-022A
DGSK 40-025A
IFAV
= 18 A
VRRM
= 220/250 V
CJunction = 26 pF
Gallium Arsenide Schottky Rectifier
Preliminary Data
VRSM
VRRM
V
V
Type
220
250
220
250
DGS 20-022A
DGS 20-025A
VRSM
VRRM
Type
V
V
220
250
220
250
A
C
TO-220 AC
Single
C
A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
A
DGSK 40-022A
DGSK 40-025A
C
A
Common cathode
TO-220 AB
Symbol
Conditions
Maximum Ratings
IFAV
IFAV
TC = 25°C; DC
TC = 90°C; DC
18
13
A
A
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
30
A
-55...+175
-55...+150
°C
°C
48
W
0.4...0.6
Nm
A
C
A
C (TAB)
Features
Low forward voltage
Very high switching speed
Low junction capacity of GaAs
- low reverse current peak at turn off
Soft turn off
Temperature independent switching
behaviour
High temperature operation capability
Epoxy meets UL 94V-0
●
●
●
●
TVJ
Tstg
●
●
Ptot
TC = 25°C
Md
mounting torque
●
Applications
MHz Switched mode power supplies
●
(SMPs)
●
●
●
Symbol
IR
VF
CJ
Conditions
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 125°C VR = VRRM
2.0
IF = 7.5 A;
IF = 7.5 A;
TVJ = 125°C
TVJ = 25°C
1.3
1.2
VR = 100 V; TVJ = 125°C
26
2.0
RthJC
RthCH
Small size SMPs
High frequency converters
Resonant converters
1.5
mA
mA
V
V
pF
3.1
K/W
0.5
K/W
2
g
Weight
IXYS reserves the right to change limits, Conditions and dimensions.
© 2001 IXYS All rights reserved
119
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
1-2
DGS 20-022A
DGS 20-025A
DGSK 40-022A
DGSK 40-025A
300
30
pF
10
CJ
A
IF
100
1
TVJ =
125°C
25°C
0.1
TVJ = 125°C
0.01
0.0
0.5
1.0
1.5
10
0.1
2.0 V 2.5
1
10
100 V 1000
VR
VF
Fig. 1 typ. forward characteristics
Fig. 2 typ. junction capacity
versus blocking voltage
10
Outline (center pin only for DGSK types)
K/W
Single Pulse
1
ZthJC
0.1
0.01
DGS10-015/018BS
0.00001
0.0001
0.001
0.01
0.1
1
s
10
t
Fig. 3 typ. thermal impedance junction to case
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium
Arsenide Schottky diodes:
GaAs Schottky Diode
by majority carriers only
VF (IF), see Fig. 1
reverse current charges
junction capacity CJ, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Millimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.38
0.56
2.29
2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.015 0.022
0.090 0.110
119
Rectifier Diode
conduction
by majority + minority carriers
forward characteristics VF (IF)
turn off characteristics extraction of excess carriers
causes temperature dependant
reverse recovery (trr, IRM, Qrr)
turn on characteristics delayed saturation leads to VFR
Dim.
© 2001 IXYS All rights reserved
2-2
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