DGS 20-022A DGS 20-025A DGSK 40-022A DGSK 40-025A IFAV = 18 A VRRM = 220/250 V CJunction = 26 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM V V Type 220 250 220 250 DGS 20-022A DGS 20-025A VRSM VRRM Type V V 220 250 220 250 A C TO-220 AC Single C A C (TAB) A = Anode, C = Cathode , TAB = Cathode A DGSK 40-022A DGSK 40-025A C A Common cathode TO-220 AB Symbol Conditions Maximum Ratings IFAV IFAV TC = 25°C; DC TC = 90°C; DC 18 13 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 30 A -55...+175 -55...+150 °C °C 48 W 0.4...0.6 Nm A C A C (TAB) Features Low forward voltage Very high switching speed Low junction capacity of GaAs - low reverse current peak at turn off Soft turn off Temperature independent switching behaviour High temperature operation capability Epoxy meets UL 94V-0 ● ● ● ● TVJ Tstg ● ● Ptot TC = 25°C Md mounting torque ● Applications MHz Switched mode power supplies ● (SMPs) ● ● ● Symbol IR VF CJ Conditions Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM 2.0 IF = 7.5 A; IF = 7.5 A; TVJ = 125°C TVJ = 25°C 1.3 1.2 VR = 100 V; TVJ = 125°C 26 2.0 RthJC RthCH Small size SMPs High frequency converters Resonant converters 1.5 mA mA V V pF 3.1 K/W 0.5 K/W 2 g Weight IXYS reserves the right to change limits, Conditions and dimensions. © 2001 IXYS All rights reserved 119 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified 1-2 DGS 20-022A DGS 20-025A DGSK 40-022A DGSK 40-025A 300 30 pF 10 CJ A IF 100 1 TVJ = 125°C 25°C 0.1 TVJ = 125°C 0.01 0.0 0.5 1.0 1.5 10 0.1 2.0 V 2.5 1 10 100 V 1000 VR VF Fig. 1 typ. forward characteristics Fig. 2 typ. junction capacity versus blocking voltage 10 Outline (center pin only for DGSK types) K/W Single Pulse 1 ZthJC 0.1 0.01 DGS10-015/018BS 0.00001 0.0001 0.001 0.01 0.1 1 s 10 t Fig. 3 typ. thermal impedance junction to case Note: explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes: GaAs Schottky Diode by majority carriers only VF (IF), see Fig. 1 reverse current charges junction capacity CJ, see Fig. 2; not temperature dependant no turn on overvoltage peak A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.38 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.015 0.022 0.090 0.110 119 Rectifier Diode conduction by majority + minority carriers forward characteristics VF (IF) turn off characteristics extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) turn on characteristics delayed saturation leads to VFR Dim. © 2001 IXYS All rights reserved 2-2