NVATS5A113PLZ Power MOSFET 60 V, 29.5 mΩ, 38 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features Low On-Resistance High Current Capability 100% Avalanche Tested AEC-Q101 qualified and PPAP capable ATPAK package is pin-compatible with DPAK (TO-252) Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 29.5 mΩ @ 10 V 38 mΩ @ 4.5 V 60 V ELECTRICAL CONNECTION P-Channel 2, 4 1 1 : Gate 2 : Drain 3 : Source 4 : Drain SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Operating Junction and Storage Temperature 38 A 44 mΩ @ 4 V Typical Applications Reverse Battery Protection Load Switch Automotive Front Lighting Automotive Body Controllers Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW 10 s, duty cycle 1% Power Dissipation Tc = 25C ID Max Symbol VDSS VGSS ID 3 Value 60 20 38 Unit V V A IDP 114 A PD 60 W 55 to +175 C Tj, Tstg 4 1 2 3 ATPAK MARKING Avalanche Energy (Single Pulse) (Note 2) EAS 95 mJ Avalanche Current (Note 3) IAV 18 A Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : VDD = 10 V, L = 500 H, IAV = 18 A 3 : L ≤ 500 H, Single pulse ORDERING INFORMATION THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction to Case Steady State (Tc = 25C) RJC 2.5 C/W Junction to Ambient (Note 4) RJA 80.1 C/W See detailed ordering and shipping information on page 6 of this data sheet. 2 Note 4 : Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad. © Semiconductor Components Industries, LLC, 2016 June 2016 - Rev. 0 1 Publication Order Number : NVATS5A113PLZ/D NVATS5A113PLZ ELECTRICAL CHARACTERISTICS at Ta 25C (Note 5) Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS ID = 1 mA, VGS = 0 V Zero-Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 1 A Gate to Source Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 A Gate Threshold Voltage VGS(th) VDS = 10 V, ID = 1 mA 2.6 V Forward Transconductance gFS VDS = 10 V, ID = 18 A 37 ID = 18 A, VGS = 10 V 22.5 29.5 m ID = 9 A, VGS = 4.5 V 27 38 m ID = 5 A, VGS = 4 V 29 44 m Static Drain to Source On-State Resistance RDS(on) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Conditions Value Parameter min typ 60 See Fig.1 VDS = 30 V, VGS = 10 V, ID = 35 A Unit V 1.2 2,400 VDS = 20 V, f = 1 MHz max S pF 250 pF 195 pF 15 ns 125 ns 250 ns 200 ns 55 nC 7.5 nC 12 nC VSD IS = 35 A, VGS = 0 V Forward Diode Voltage V 0.98 1.5 Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Switching Time Test Circuit www.onsemi.com 2 NVATS5A113PLZ www.onsemi.com 3 NVATS5A113PLZ www.onsemi.com 4 NVATS5A113PLZ PACKAGE DIMENSIONS unit : mm DPAK (Single Gauge) / ATPAK CASE 369AM ISSUE O 4 2 3 RECOMMENDED SOLDERING FOOTPRINT 6.5 1 : Gate 2 : Drain 1.5 2 4 : Drain 6.7 3 : Source 1.6 1 2.3 www.onsemi.com 5 2.3 NVATS5A113PLZ ORDERING INFORMATION Device NVATS5A113PLZT4G Marking Package Shipping (Qty / Packing) ATP113 DPAK(Single Gauge) / ATPAK (Pb-Free / Halogen Free) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the NVATS5A113PLZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 6