Dc MPSA05 Technical specifications of npn epitaxial planar transistor Datasheet

DC COMPONENTS CO., LTD.
MPSA05
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
TO-92
Pinning
.190(4.83)
.170(4.33)
1 = Emitter
2 = Base
3 = Collector
o
2 Typ
.190(4.83)
.170(4.33)
o
2 Typ
.500
Min
(12.70)
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol
Rating
.022(0.56)
.014(0.36)
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
4
V
Collector Current
IC
500
mA
Total Power Dissipation
PD
625
mW
Junction Temperature
TJ
+150
o
Storage Temperature
TSTG
-55 to +150
o
.050
Typ
(1.27)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
3 2 1
.148(3.76)
.132(3.36)
.050
o
o
5 Typ. 5 Typ. (1.27) Typ
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
Characteristic
BVCBO
60
-
-
V
Collector-Emitter Breakdown Voltage
BVCEO
60
-
-
V
IC=1mA, IB=0
Emitter-Base Breakdown Volatge
BVEBO
4
-
-
V
IE=100µA, IC=0
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
(1)
DC Current Gain(1)
Transition Frequency
(1)Pulse Test: Pulse Width
(1)
Test Conditions
IC=100µA, IE=0
ICBO
-
-
0.1
µA
VCB=60V, IE=0
ICEO
-
-
0.1
µA
VCE=60V, IB=0
VCE(sat)
-
-
0.25
V
IC=100mA, IB=10mA
VBE(on)
-
-
1.2
V
IC=100mA, VCE=1V
hFE1
50
-
-
-
IC=10mA, VCE=1V
hFE2
50
-
-
-
fT
100
-
-
MHz
380µs, Duty Cycle
2%
IC=100mA, VCE=1V
IC=10mA, VCE=2V, f=100MHz
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