DC COMPONENTS CO., LTD. MPSA05 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating .022(0.56) .014(0.36) Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 4 V Collector Current IC 500 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 60 - - V Collector-Emitter Breakdown Voltage BVCEO 60 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 4 - - V IE=100µA, IC=0 Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage (1) DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width (1) Test Conditions IC=100µA, IE=0 ICBO - - 0.1 µA VCB=60V, IE=0 ICEO - - 0.1 µA VCE=60V, IB=0 VCE(sat) - - 0.25 V IC=100mA, IB=10mA VBE(on) - - 1.2 V IC=100mA, VCE=1V hFE1 50 - - - IC=10mA, VCE=1V hFE2 50 - - - fT 100 - - MHz 380µs, Duty Cycle 2% IC=100mA, VCE=1V IC=10mA, VCE=2V, f=100MHz