*J.£.i\£.u
^zmi-donductoi
U
{/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IRF140-143/IRF540-543
N-Channel Power MOSFETs,
27 A, 60-100 V
Power And Discrete Division
Description
TO-204AE
TO-220AB
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high power, high speed
applications, such as switching power supplies, UPS, AC
and DC motor controls, relay and solenoid drivers and
high energy pulse circuits.
Low Boston)
VGS Rated at ±20 V
Silicon Gate for Fast Switching Speeds
IDSS. Vos(on), Specified at Elevated Temperature
Rugged
Low Drive Requirements
Ease of Paralleling
IRFS40
IRF541
IRF542
IRF543
Product Summary
ID at
ID at
Tc = 100'C
Part Number
VDSS
RDS (on)
Tcsas'c
IRF140
100 V
0.085 J2
27 A
17 A
IRF141
60 V
0.085 n
0.11 n
0.11 n
0.085 n
o.o85 n
0.11 n
0.11 n
27 A
17 A
24 A
15 A
IRF142
100 V
IRF143
60 V
IRF540
100 V
IRF541
60 V
IRF542
100 V
IRF543
60 V
24 A
15 A
27 A
17 A
27 A
17 A
24 A
15 A
24 A
15 A
Case Style
TO-204AE
TO-220AB
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF140-143/IRF540-543
Maximum Ratings
Rating
IRF140/142
IRFS40/542
Rating
IRF141/143
IRF641/S43
VDSS
Drain to Source Voltage1
100
60
V
VOQR
Drain to Gate Voltage1
RQS - 20 k«
100
60
V
Characteristic
Symbol
VGS
Tj.
TStg
TL
Unit
Gate to Source Voltage
±20
±20
V
Operating Junction and
Storage Temperatures
-55 to +15C
-55 to +150
°c
275
275
•c
Maximum Lead Temperature
(or Soldering Purposes,
1/8" From Case for 5 $
Maximum Thermal Characteristics
IRF140-143
IRF540-543
RftjC
Thermal Resistance,
Junction to Case
1.0
1.0
°C/W
PD
Total Power Dissipation
at Tc-^S-C
125
125
W
IDM
Pulsed Drain Current2
108
108
A
Electrical Characteristics (Tc = 25°C unless otherwise noted)
Mln
Characteristic
Symbol
Max
Unit
Test Conditions
Off Characteristics
V(BR)DSS
loss
IGSS
V
VQS-O V, ID = 250 M
250
J"A
V DS - Rated VDSS, V QS -=0 V
1000
HA
VDS - 0.8 x Rated VDSS.
VQS = O V, Tc-ISS'C
nA
V QS - ±20 V, Voa-0 V
Drain Source Breakdown Voltage1
IRF140/142/540/542
100
IRF141/143/541/543
60
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IRF140-143
±100
±500
IRF540-S43
On Characteristics
vGS(lh)
Gate Threshold Voltage
R[3S(on)
Static Drain-Source On-Resistance2
2.0
ID => 250 AIA, VDS " VQS
V GS -10 V, ID = 15 A
S Rj)
VDS -10 V, b -15 A
0.11
IRF142/143/542/543
gis
V
ft
0.085
IRF140/141/540/541
Forward Transconductance
4.0
r
6.0
IRF140-143/IRF540-543
Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
1600
PF
Test Conditions
Dynamic Characteristics
Cjss
Input Capacitance
COM
Output Capacitance
600
pF
Crss
Reverse Transfer Capacitance
300
PF
VDS - 25 V, VGS - 0 V
f-1.0 MHz
Switching Characteristics (TC = 25°C, Figures 1, 2,)3
tdlon)
Turn-On Delay Time
30
ns
t,
Rise Time
60
ns
td(otf)
Turn-Oft Delay Time
80
tf
Fall Time
30
ns
ns
ld(on)
Turn-On Delay Time
60
ns
tr
Rise Time
450
ns
*d(otf)
Turn-Off Delay Time
150
ns
»f
Fall Time
200
ns
QQ
Total Gate Charge
60
nC
Symbol
Characteristic
Typ
Max
Unit
VDD = 45 V. b -15 A
VQS -10 V, RGEN-4.7 S7
RQS - 4.7 li
V D D -25 V, ID -15 A
VQS-IO v, RQEN-SO n
Ros-50 n
VGS -10 V, ID -34 A
VDD = 35 V
Test Conditions
Source-Drain Diode Characteristics
VSD
V
Diode Forward Voltage
IRF140/141/540/541
IRF142/143/542/543
2.0
2.0
Reverse Recovery Time
300
Notu
1. Tj- -I-25'C to +1BO'C
2. Pulse widlh limited by Tj
3. Switching time measurements performed on LEM TR-58 test equipment
2.5
2.3
V
V
ls - 27 A; VQS - 0 V
ls - 24 A; VQS - 0 V
ns
ls = 4.0 A; dls/dt - 25 A/»iS