Pb Free Plating Product ISSUED DATE :2006/08/15 REVISED DATE : GSC9431 BVDSS RDS(ON) ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -20V 130m -3.5A Description The GSC9431 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Simple Drive Requirement *Low On-resistance *Fast Switching Speed Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. Millimeter Min. Max. M H L J K G 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. GSC9431 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Unit V V A A A W W/ Tj, Tstg Ratings -20 ±8 -3.5 -2.8 -18 2.5 0.02 -55 ~ +150 Symbol Rthj-a Value 50 Unit /W Page: 1/4 ISSUED DATE :2006/08/15 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.028 - Gate Threshold Voltage VGS(th) -0.4 - -1.0 V VDS=VGS, ID=-250uA gfs - 6.5 - S VDS=-5V, ID=-3.5A IGSS - - ±100 nA VGS= ±8V - - -1 uA VDS=-16V, VGS=0 - - -25 uA VDS=-12V, VGS=0 - - 130 - - 180 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-250uA VGS=-4.5V, ID=-3.5A VGS=-2.5V, ID=-3.0A Total Gate Charge2 Qg - 6 8.5 Gate-Source Charge Qgs - 0.8 - Gate-Drain (“Miller”) Change Qgd - 1.3 - Td(on) - 6.5 - Tr - 20 - Td(off) - 31 - Tf - 21 - Ciss - 405 - Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss - 45 - Symbol Min. Typ. Max. Unit VSD - - -1.2 V IS=-2.1A, VGS=0V IS - - -2.1 A VD=VG=0V, VS=-1.2V 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance nC ID=-3.5A VDS=-5V VGS=-4.5V ns VDD=-5V ID=-1A VGS=-4.5V RG=6 pF VGS=0V VDS=-10V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current (Body Diode) Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad. GSC9431 Page: 2/4 ISSUED DATE :2006/08/15 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics GSC9431 Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage Fig 4. On-Resistance v.s. Junction Temperature Fig 5. On-Resistance v.s. Gate-Source Voltage Fig 6. Body Diode Characteristics Page: 3/4 ISSUED DATE :2006/08/15 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Maximum Power Dissipation v.s. Junction Temperature Fig 9. Gate Charge Characteristics 0.0001 0.001 0.01 Fig 10. Typical Capacitance Characteristics 0.1 1 10 100 300 Fig 11. Transient Thermal Response Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSC9431 Page: 4/4