GTM GSC9431 P-channel enhancement mode power mosfet Datasheet

Pb Free Plating Product
ISSUED DATE :2006/08/15
REVISED DATE :
GSC9431
BVDSS
RDS(ON)
ID
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
-20V
130m
-3.5A
Description
The GSC9431 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low On-resistance
*Fast Switching Speed
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0°
0.40
0.19
6.20
5.00
4.00
8°
0.90
0.25
REF.
Millimeter
Min.
Max.
M
H
L
J
K
G
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
1,2
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
GSC9431
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Unit
V
V
A
A
A
W
W/
Tj, Tstg
Ratings
-20
±8
-3.5
-2.8
-18
2.5
0.02
-55 ~ +150
Symbol
Rthj-a
Value
50
Unit
/W
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ISSUED DATE :2006/08/15
REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
-0.028
-
Gate Threshold Voltage
VGS(th)
-0.4
-
-1.0
V
VDS=VGS, ID=-250uA
gfs
-
6.5
-
S
VDS=-5V, ID=-3.5A
IGSS
-
-
±100
nA
VGS= ±8V
-
-
-1
uA
VDS=-16V, VGS=0
-
-
-25
uA
VDS=-12V, VGS=0
-
-
130
-
-
180
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=-250uA
Reference to 25 , ID=-250uA
VGS=-4.5V, ID=-3.5A
VGS=-2.5V, ID=-3.0A
Total Gate Charge2
Qg
-
6
8.5
Gate-Source Charge
Qgs
-
0.8
-
Gate-Drain (“Miller”) Change
Qgd
-
1.3
-
Td(on)
-
6.5
-
Tr
-
20
-
Td(off)
-
31
-
Tf
-
21
-
Ciss
-
405
-
Output Capacitance
Coss
-
170
-
Reverse Transfer Capacitance
Crss
-
45
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
-1.2
V
IS=-2.1A, VGS=0V
IS
-
-
-2.1
A
VD=VG=0V, VS=-1.2V
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
nC
ID=-3.5A
VDS=-5V
VGS=-4.5V
ns
VDD=-5V
ID=-1A
VGS=-4.5V
RG=6
pF
VGS=0V
VDS=-10V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
GSC9431
Page: 2/4
ISSUED DATE :2006/08/15
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
GSC9431
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain
Current and Gate Voltage
Fig 4. On-Resistance v.s.
Junction Temperature
Fig 5. On-Resistance
v.s. Gate-Source Voltage
Fig 6. Body Diode Characteristics
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ISSUED DATE :2006/08/15
REVISED DATE :
Fig 7. Maximum Safe Operating Area
Fig 8. Single Pulse Maximum
Power Dissipation
v.s. Junction Temperature
Fig 9. Gate Charge Characteristics
0.0001
0.001
0.01
Fig 10. Typical Capacitance Characteristics
0.1
1
10
100
300
Fig 11. Transient Thermal Response Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSC9431
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