DC COMPONENTS CO., LTD. MJE13005 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high-voltage, high-speed power switching inductive circuits. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .405(10.28) .380(9.66) .295(7.49) .220(5.58) o Absolute Maximum Ratings(TA=25 Characteristic C) Symbol Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current o .625(15.87) .570(14.48) Rating .350(8.90) .330(8.38) Unit VCEX 700 VCEO 400 V VEBO 9 V IC 4 A IB 2 A V Total Power Dissipation(TC=25 C) PD 75 Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .640 Typ (16.25) 1 2 3 .562(14.27) .500(12.70) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .024(0.60) .014(0.35) .100 Typ (2.54) W C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Collector-Emitter Breakdown Volatge Min Typ Max Unit Test Conditions BVCEX 700 - - V IC=1mA, VBE(off)=1.5V BVCEO 400 - - V IC=10mA Collector Cutoff Current ICEX - - 1 mA VCE=700V, VBE(off)=1.5V Emitter Cutoff Current IEBO - - 1 mA VEB=9V VCE(sat)1 - - 0.5 V (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage(1) (1) DC Current Gain (1)Pulse Test: Pulse Width IC=1A, IB=200mA VCE(sat)2 - - 0.6 V IC=2A, IB=500mA VCE(sat)3 - - 1 V IC=4A, IB=1A VBE(sat)1 - - 1.2 V IC=1A, IB=200mA VBE(sat)2 - - 1.6 V IC=2A, IB=500mA hFE1 10 - 60 - IC=0.5A, VCE=5V hFE2 10 - 60 - IC=1A, VCE=5V hFE3 8 - 40 - IC=2A, VCE=5V 380µs, Duty Cycle 2%