B120B-B160B Schottky Barrier Rectifiers REVERSE VOLTAGE: 20 --- 60 V CURRENT: 1.0 A SMB Features 4.7± 0.25 Built-in strain relief ◇ Metal silicon junction, majority carrier conduction ◇ High surge capability Low profile package 3.6± 0.3 ◇ ◇ 2.0± 0.15 ◇ Plastic package has Underwriters Laboratory 11 1 Flammability Classification 94V-0 ◇ For surface mounted applications 5.4± 0.2 2.3± 0.15 ◇ Low power loss,high effciency ◇ For use in low voltage high frequency inverters,free 11 1 wheeling and polarity protection applications ◇ Guardring for overvoltage protection 0.2± 0.05 1.3± 0.2 0.203MAX ◇ High temperature soldering guaranteed:250oC/10 11 1 seconds at terminals Mechanical Data ◇ Case:JEDEC SMB,molded plastic over 11 11passivated chip ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.003 ounces, 0.093 gram Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified B120B B130B IB140B B150B B160B UNITS OOH Maximum recurrent peak reverse voltage VRRM 20 30 40 50 60 V Maximum RMS voltage VRWS 14 21 28 35 42 V Maximum DC blocking voltage VDC 20 30 40 50 60 V Maximum average forw ord rectified current at x TL(SEE FIG.1) Peak forw ard surge current 8.3ms single halfx sine-w ave superimposed on rated load(JEDEC x Method) Maximum instantaneous forw ard voltage at x 1.0A(NOTE.1) Maximum DC reverse current (NOTE.1) x @TA=25oC at rated DC blockjing voltage 1.0 A I FSM 30.0 A VF IR Storage temperature range Operating junction x and storage temperature range 0.5 0.7 0.5 V mA 10.0 @TA =100oC Typical thermal resitance (NOTE. 2) Storage temperature range I(AV) RθJA 88.0 RθJL 20.0 Tj - 55 --- +125 TSTG - 55 --- +150 NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle 2. P.C.B.mounted with 0.2"X0.2"(5.0X5.0mm 2)copper pad areas http://www.luguang.cn mail:[email protected] o C/W o C o C B120B-B160B Schottky Barrier Rectifiers Ratings AND Charactieristic Curves AVERAGE FORWARD CURRENT,AMPERES 1.0 FIG.2-- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,AMPERES FIG.1 -- FORWARD DERATING CURVE Resistive or inductive Load 0.5 P.C.B.MOUNTED ON 0.2X0.2(5.0X5.0mm) COPPERPAD AREAS 0 50 60 70 80 90 100 110 120 130 140 150 160 170 50 20 10 0 O TJ=100 C S O TJ=25 C B120-B140 B150-B160 0.2 0.4 0.6 0.8 1.0 1.2 100 1.4 100 INSTANTANEOUS REVERSE CURRENT,MICROAMPERES TJ=125 C 10 1.6 B120B-B140B B150B-B160B 10 0 TJ=125 C 1 0.1 0 TJ=75 C 0.01 TJ=25 0C 0.001 0 20 40 60 FIG.5--TYPICAL JUNCTION CAPACITANCE 400 0 TJ=25 C f=1.0MHz Vsig=50mVp-p 100 10 0.1 B120B-B140B B150B-B160B 1 10 100 REVERSE VOLTAGE,VOLTS http://www.luguang.cn 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,％ INSTANTANEOUS FORWARD VOLTAGE,VOLTS JUNCTION CAPACITANCE,pF INSTANTANEOUS FORWARD CURRENT,AMPERES O 0.01 0 10 FIG.4 -- TYPICAL REVERSE CHARACTERISTICS 50 0.1 1 NUMBER OF CYCLES AT 60Hz FIG.3 -- TYPICAL FORWARD CHARACTERISTICS 1 TL=100 C 8.3ms Single Half Sine-Wave (JEDEC Method) 30 LEAD TEMPERATURE ℃ Puise Width=300 1%DUTY CYCLE O 40 mail:[email protected]