MGCHIP MDF9N60 N-channel mosfet 600v, 9a, 0.75(ohm) Datasheet

N-Channel MOSFET 600V, 9A, 0.75Ω
General Description
Features
The MDF9N60 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF9N60 is suitable device for SMPS, high Speed switching
and general purpose applications.
D
@ Tjmax
@ VGS = 10V
@ VGS = 10V
Applications
G
VDS = 600V
VDS = 660V
ID = 9.0A
RDS(ON) ≤ 0.75Ω
Power Supply
PFC
High Current, High Speed Switching
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
TC=25 C
VDSS
600
V
660
V
VGSS
±30
V
9.0
A
5.7
A
32
A
48
W
W/ oC
ID
o
TC=100 C
Pulsed Drain Current(1)
IDM
o
TC=25 C
Power Dissipation
o
Derate above 25 C
Repetitive Avalanche Energy EAR(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Unit
VDSS @ Tjmax
o
Continuous Drain Current (※)
Rating
PD
0.38
EAR
4.8
mJ
Dv/dt
4.5
V/ns
EAS
480
mJ
TJ, Tstg
-55~150
Symbol
Rating
RθJA
62.5
RθJC
2.62
o
C
※ Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
(1)
(1)
Thermal Resistance, Junction-to-Case
Nov 2009. Version 2.2
1
Unit
o
C/W
MagnaChip Semiconductor Ltd.
MDF9N60 N-channel MOSFET 600V
MDF9N60
Part Number
Temp. Range
Package
Packing
RoHS Status
MDF9N60TH
-55~150oC
TO-220F
Tube
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
600
-
-
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
3.0
-
5.0
IDSS
VDS = 600V, VGS = 0V
-
-
1
µA
IGSS
VGS = ±30V, VDS = 0V
-
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 4.5A
gfs
VDS = 30V, ID = 4.5A
Forward Transconductance
V
-
100
nA
0.65
0.75
Ω
7.0
-
S
-
27
-
-
8.2
-
-
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
10.7
Input Capacitance
Ciss
-
1160
VDS = 480V, ID = 9.0A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
Crss
-
6.2
Output Capacitance
Coss
-
134
Turn-On Delay Time
td(on)
-
31
-
59
-
48
tf
-
30
IS
-
11
Rise Time
tr
Turn-Off Delay Time
Fall Time
td(off)
VGS = 10V, VDS = 300V, ID = 9.0A,
RG = 25Ω(3)
nC
pF
ns
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
VSD
trr
IS = 9.0A, VGS = 0V
IF = 9.0A, dl/dt = 100A/µs(3)
Qrr
-
-
A
1.4
V
-
360
ns
-
3.9
µC
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤9.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=10.8mH, IAS=9.0A,
Nov 2009. Version 2.2
VDD=50V, Rg =25Ω, Starting TJ=25°C
2
MagnaChip Semiconductor Ltd.
MDF9N60 N-channel MOSFET 600V
Ordering Information
1.5
RDS(ON) [Ω ]
15
ID,Drain Current [A]
Notes
1. 250㎲ Pulse Test
2. TC=25℃
Vgs=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
=10.0V
=15.0V
10
VGS=10.0V
1.0
VGS=20V
5
0.5
5
10
15
20
0
5
10
VDS,Drain-Source Voltage [V]
20
25
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
1.2
3.0
※ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
※ Notes :
RDS(ON), (Normalized)
Drain-Source On-Resistance
15
1. VGS = 10 V
2. ID = 4.5 A
2.5
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
1.1
1.0
0.9
0.8
-50
200
0
IDR
Reverse Drain Current [A]
ID [A]
150℃
-55℃
25℃
6
8
10
150℃
10
25℃
1
0.1
0.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain Voltage [V]
VGS [V]
Fig.5 Transfer Characteristics
Nov 2009. Version 2.2
200
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
10
4
150
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. VDS=30V
2
100
TJ, Junction Temperature [ C]
Fig.3 On-Resistance Variation with
Temperature
1
50
o
o
TJ, Junction Temperature [ C]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
MagnaChip Semiconductor Ltd.
MDF9N60 N-channel MOSFET 600V
20
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Note : ID = 9A
8
C oss
2000
120V
300V
Capacitance [pF]
480V
6
4
1500
C iss
1000
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
C rss
2
500
0
0
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
1
30
Fig.7 Gate Charge Characteristics
10
Fig.8 Capacitance Characteristics
2
Operation in This Area
is Limited by R DS(on)
10
10 µs
100 µs
1
8
1 ms
ID, Drain Current [A]
ID, Drain Current [A]
10
10
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
10 ms
DC 1s
10
10
100 ms
0
-1
-2
10
-1
4
2
Single Pulse
TJ=Max rated
TC=25℃
10
6
10
0
10
1
10
0
25
2
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
16000
single Pulse
RthJC = 2.62℃/W
TC = 25℃
14000
D=0.5
0
10
12000
10000
0.1
Power (W)
Zθ JC(t),
Thermal Response
0.2
0.05
-1
10
0.02
0.01
2000
0
1E-5
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t1, Rectangular Pulse Duration [sec]
1E-4
1E-3
0.01
0.1
1
10
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation
Fig.11 Transient Thermal Response Curve
Nov 2009. Version 2.2
6000
4000
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=2.62℃/W
single pulse
8000
4
MagnaChip Semiconductor Ltd.
MDF9N60 N-channel MOSFET 600V
10
MDF9N60 N-channel MOSFET 600V
Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
S y mbol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
¢R
Nov 2009. Version 2.2
Min
4.50
0.63
1.15
0.33
15.47
9.60
Nom
Max
4.93
0.91
1.47
0.63
16.13
10.71
2.54
2.34
6.48
12.24
2.79
2.52
3.10
3.00
2.84
6.90
13.72
3.67
2.96
3.50
3.55
5
MagnaChip Semiconductor Ltd.
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DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
\
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Nov 2009. Version 2.2
6
MagnaChip Semiconductor Ltd.
MDF9N60 N-channel MOSFET 600V
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