LESHAN RADIO COMPANY, LTD. Driver Transistors NPN Silicon 3 COLLECTOR BSS64LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 80 Vdc Collector–Base Voltage V CBO 120 Vdc Emitter–Base Voltage V EBO 5.0 Vdc 100 mAdc Collector Current — Continuous IC CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/°C RθJA 556 °C/W PD 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C RθJA TJ , Tstg DEVICE MARKING BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 80 — Vdc Collector–Base Breakdown Voltage (I C = 100 µAdc ) V (BR)CBO 120 — Vdc Emitter–Base Breakdown Voltage V (BR)EBO 5.0 — Vdc ( V CB = 90 Vdc ) — 0.1 ( T A = 150°C ) Emitter Cutoff Current — 500 — 200 OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 4.0 mAdc ) (I E = 100 µAdc ) Collector Cutoff Current ( V EB = 4.0Vdc ) I CBO I EBO nAdc nAdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company. M40–1/2 LESHAN RADIO COMPANY, LTD. BSS64LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit hFE 20 — — V BE(sat) — — — 0.15 0.2 — — fT 60 — MHz C ob — 20 pF ON CHARACTERISTICS DC Current Gain (I C = 10 mAdc, V CE = 1.0 Vdc) Collector–Emitter Saturation Voltage (I C = 4.0mAdc, I B = 0.4 mAdc) (I C = 50mAdc, I B = 15 mAdc) Forward Base–Emitter Voltage VCE(sat) Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 4.0 mAdc, V CE = 10 Vdc, f = 20 MHz) Output Capacitance (V CB = 10 Vdc, f = 1.0 MHz) M40–2/2