SUTEX LP0701N3 P-channel enhancement-mode lateral mosfet Datasheet

LP0701
Low Threshold
P-Channel Enhancement-Mode
Lateral MOSFET
Ordering Information
Order Number / Package
BVDSS /
BVDGS
RDS(ON)
(max)
ID(ON)
(min)
VGS(th)
(max)
TO-92
SO-8
Die
-16.5V
1.5Ω
-1.25A
-1.0V
LP0701N3
LP0701LG
LP0701ND
Advanced MOS Technology
Features
These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown. The low threshold voltage and low onresistance characteristics are ideally suited for hand held battery
operated applications.
Ultra low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Freedom from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Applications
Logic level interfaces
Package Options
Solid state relays
(Note 1)
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
SGD
Absolute Maximum Ratings
TO-92
Drain-to-Source Voltage
BVDSS
Drain-to-Gate Voltage
BVDGS
NC
1
8
D
Gate-to-Source Voltage
± 10V
NC
2
7
D
-55°C to +150°C
S
3
6
D
300°C
G
4
5
D
Operating and Storage Temperature
Soldering Temperature*
*Distance of 1.6 mm from case for 10 seconds.
SO-8
top view
Note: See Package Outline section for dimensions.
7-23
LP0701
Thermal Characteristics
Package
*
†
°C/W
θja
°C/W
IDR
IDRM*
1W
125
170
-0.5A
-1.25A
1.5W†
83
104†
-0.7A
-1.25A
ID (continuous)*
ID (pulsed)*
Power Dissipation
@ TC = 25°C
TO-92
-0.5A
-1.25A
SO-8
-0.7A
-1.25A
θjc
ID (continuous) is limited by max rated Tj.
Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
∆V GS(th)
Typ
Max
Unit
-16.5
Conditions
V
VGS = 0V, ID = -1mA
-1.0
V
VGS = VDS, ID = -1mA
Change in VGS(th) with Temperature
-4.0
mV/°C
VGS = VDS, ID = -1mA
IGSS
Gate Body Leakage
-100
nA
VGS = ±10V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
-100
nA
VDS = -15V, VGS = 0V
-1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
-0.5
-0.7
-0.4
ON-State Drain Current
ID(ON)
RDS(ON)
-0.6
-1.0
-1.25
-2.3
Static Drain-to-Source
ON-State Resistance
A
VGS = VDS = -2V
VGS = VDS = -3V
A
VGS = VDS = -5V
Ω
VGS = -2V, ID = -50mA
2.0
4.0
1.7
2.0
VGS = -3V, ID = -150mA
1.3
1.5
VGS = -5V, ID = -300mA
∆RDS(ON)
Change in RDS(ON) with temperature
GFS
Forward Transconductance
CISS
Input Capacitance
120
250
COSS
Common Source Output Capacitance
100
125
CRSS
Reverse Transfer Capacitance
40
60
td(ON)
Turn-ON Delay Time
20
tr
Rise Time
20
VDD =-15V, ID = -1.25A,
td(OFF)
Turn-OFF Delay Time
30
RGEN = 25Ω
tf
Fall Time
30
VSD
Diode Forward Voltage Drop
0.75
Ω
500
%/°C
700
-1.2
VGS = -5V, ID = -300mA
m
VDS = -15V, ID = -1A
pF
VGS = 0V, VDS = -15V, f = 1MHz
ns
-1.5
V
VGS = 0V, ISD = -500mA
Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
Note 2: All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
PULSE
GENERATOR
INPUT
90%
-10V
t(ON)
td(ON)
Rgen
t(OFF)
td(OFF)
tr
tF
D.U.T.
0V
90%
OUTPUT
INPUT
90%
RL
OUTPUT
VDD
10%
10%
VDD
7-24
LP0701
Typical Performance Curves
Output Characteristics
Saturation Characteristics
-2.5
-2.5
VGS = -5V
VGS = -5V
-2.0
-2.0
ID (amperes)
ID (amperes)
-4V
-1.5
-1.0
-3V
-0.5
-2V
-4V
-1.5
-1.0
-3V
-0.5
-2V
-1V
-1V
0
0
0
-4
-8
-12
-16
0
-1
-2
VDS (volts)
-4
-5
Power Dissipation vs. Case Temperature
Transconductance vs. Drain Current
2
1.0
VDS = -15V
TA = -55°C
0.8
SO-8
TA = 25°C
0.6
PD (watts)
GFS (siemens)
-3
VDS (volts)
TA = 125°C
0.4
1
TO-92
0.2
0
0
0
0
-2.0
-1.0
50
75
100
125
TC (°C)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
-10
150
Thermal Resistance (normalized)
1.0
TO-92/SO-8 (pulsed)
ID (amperes)
25
ID (amperes)
-1.0
TO-92 (DC)
-0.1
SO-8 (DC)
0.8
0.6
TO-92
TC = 25°C
PD = 1W
0.4
0.2
T C = 25°C
-0.01
-0.1
-1.0
-10
0
0.001
-100
VDS (volts)
0.01
0.1
tP (seconds)
7-25
1.0
10
LP0701
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
10
VGS = -2V
1.1
VGS = -3V
RDS(ON) (ohms)
BVDSS (normalized)
8
1.0
VGS = -5V
6
4
2
0.9
0
0
50
100
150
-3
-2
Tj (°C)
ID (amperes)
Transfer Characteristics
V(th) and RDS Variation with Temperature
1.6
1.4
-2
VDS = -15V
VGS(th) (normalized)
1.2
TA = -55°C
ID (amperes)
-1
0
TA = 25°C
-1
TA = 125°C
1.0
1.2
0.8
1.0
RDS(ON) @ -5V, -300mA
0.6
0
1.4
V(th) @ -1mA
0.8
0.4
0
-1
-2
-3
-4
0.6
-50
-5
0
50
100
150
VGS (volts)
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
200
-10
f = 1MHz
VDS = -10V
CISS
VGS (volts)
C (picofarads)
-8
100
COSS
-20V
-6
238pF
-4
-2
CRSS
0
CISS = 115pF
0
0
-5
-10
0
-15
VDS (volts)
1
2
3
QG (nanocoulombs)
7-26
4
5
RDS(ON) (normalized)
-50
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