650V Field Stop IGBT General Description Features This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. High Speed Switching & Low Power Loss VCE(sat) = 1.95V @ IC = 40A Eoff = 0.3mJ @ TC = 25°C High Input Impedance trr = 80ns (typ.) @diF/dt = 1000A/ μs Maximum junction temperature 175°C Applications PFC UPS PV Inverter Welder IH Cooker TO-247 G C E Maximum Rating Parameter Collector-emitter voltage DC collector current, limited by Tvjmax TC=25°C TC=100°C Pulsed collector current, tp limited by Tjvjmax Turn off safe operating area VCE ≤ 600V, Tvj ≤ 175°C TC=25°C Diode forward current limited by Tvjmax TC=100°C Diode pulsed current, tp limited by Tvjmax Gate-emitter voltage TC=25°C Power dissipation TC=100°C Short circuit withstand time VCC ≤ 400V, VGE = 15V, Tvj = 150°C Allowed number of short circuits < 1000 Time between short circuits ≥ 1.0s Operating Junction temperature range Storage temperature range Soldering temperature Wave soldering 1.6 mm (0.063 in.) from case for 10s Mounting torque, M3 screw Maximum of mounting processes: 3 Symbol Rating Unit VCE 650 80 40 160 160 40 20 160 ±20 341 170 V A A A A A V W W tsc 5 μs Tvj Tstg -40~175 -55~150 °C °C 260 °C M 0.6 Nm Unit IC ICpuls IF IFpuls VGE PD A Thermal Characteristic Symbol Rating Thermal resistance junction-to-ambient Parameter RθJA 40 Thermal resistance junction-to-case for IGBT RθJC 0.44 Thermal resistance junction-to-case for Diode RθJC 1.2 Sep. 2015 Revision 0.0 1 °C/W MagnaChip Semiconductor Ltd. MBQ40T65FESC 650V Field Stop IGBT MBQ40T65FESC Part Number Marking Temp. Range Package Packing RoHS Status MBQ40T65FESCTH 40T65FESC -55~175°C TO-247 Tube Halogen Free Electrical Characteristic (Tvj = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit 650 - - V Tvj = 25°C 1.95 2.4 Tvj = 175°C 2.3 Tvj = 25°C 1.5 Tvj = 175°C 1.4 Static Characteristic Collector-emitter breakdown voltage BVCES IC = 2mA, VGE = 0V Collector-emitter saturation voltage VCE(sat) IC = 40A, VGE= 15V VF VGE = 0V, IF = 20A Diode forward voltage Gate-emitter threshold voltage VGE(th) VCE = VGE, IC = 0.5mA 1.9 V V 4.0 5.0 6.0 V Zero gate voltage collector current ICES VCE = 650V, VGE = 0V, Tvj = 25°C - - 40 μA Gate-emitter leakage current IGES VGE = 20V, VCE = 0V - - ±100 nA - 218 Dynamic Characteristic Total gate charge Qg Gate-emitter charge Qge Gate-collector charge Qgc VCE = 520V, IC = 40A, VGE = 15V - 33 - 136 nC - 3342 - - 120 - Input capacitance Cies Reverse transfer capacitance Cres Output capacitance Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current Max. 1000 short circuits Time between short circuits: ≥ 1.0s Coes - 198 - LE - 13.0 - nH - 120 - A td(on) - 50 - tr - 49 - - 318 - - 36 - IC(SC) VCE = 25V, VGE = 0V, f = 1MHz VGE = 15V, VCC = 400V, tSC ≤ 5μs, Tvj = 150°C pF Switching Characteristic Turn-on delay time Rise time Turn-off delay time Fall time td(off) tf VGE = 15V, VCC = 400V, IC = 40A, RG = 7.9Ω, Inductive Load, Tvj = 25°C Turn-on switching energy Eon - 0.68 - Turn-off switching energy Eoff - 0.30 - Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Ets - 0.98 - td(on) - 45 - tr - 57 - td(off) - 366 - - 47 - - 0.95 - tf VGE = 15V, VCC = 400V, IC = 40A, RG = 7.9Ω, Inductive Load, Tvj = 175°C ns mJ ns Turn-on switching energy Eon Turn-off switching energy Eoff - 0.36 - Total switching energy Ets - 1.31 - Reverse recovery time trr - 80 - ns Reverse recovery current Irr - 20 - A Reverse recovery charge Qrr - 0.8 - μC Reverse recovery time trr - 92 - ns - 28 - A - 1.3 - nC Reverse recovery current Irr Reverse recovery charge Qrr Sep. 2015 Revision 0.0 IF = 20A, diF/dt = 1000A/ μs, Tvj = 25°C IF = 20A, diF/dt = 1000A/ μs, Tvj = 175°C 2 mJ MagnaChip Semiconductor Ltd. MBQ40T65FESC 650V Field Stop IGBT Ordering Information MBQ40T65FESC 650V Field Stop IGBT Sep. 2015 Revision 0.0 3 MagnaChip Semiconductor Ltd. MBQ40T65FESC 650V Field Stop IGBT Sep. 2015 Revision 0.0 4 MagnaChip Semiconductor Ltd. MBQ40T65FESC 650V Field Stop IGBT Sep. 2015 Revision 0.0 5 MagnaChip Semiconductor Ltd. MBQ40T65FESC 650V Field Stop IGBT Sep. 2015 Revision 0.0 6 MagnaChip Semiconductor Ltd. TO-247 E ΦP Dimensions are in millimeters, unless otherwise specified A L1 D E2 D1 S Q A2 b2 L b1 b e E1 c Dimension Min(mm) Max(mm) A 4.70 5.31 A1 2.20 2.60 A2 1.50 2.49 b 0.99 1.40 b1 2.59 3.43 b2 1.65 2.39 c 0.38 0.89 D 20.30 21.46 D1 13.08 - E 15.45 16.26 E1 13.06 14.02 E2 4.32 5.49 e L 5.45BSC 19.81 20.57 L1 - 4.50 ΦP 3.50 3.70 Q 5.38 S Sep. 2015 Revision 0.0 A1 6.20 6.15BSC 7 MagnaChip Semiconductor Ltd. MBQ40T65FESC 650V Field Stop IGBT Physical Dimension MBQ40T65FESC 650V Field Stop IGBT DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Sep. 2015 Revision 0.0 8 MagnaChip Semiconductor Ltd.