AP9997GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 100V RDS(ON) 120mΩ ID G 11A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications. G D TO-220(P) S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 11 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 7 A 30 A 34.7 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 3.6 ℃/W 62 ℃/W 1 200812242 AP9997GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 100 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A - - 120 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=8A - 7.3 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA Drain-Source Leakage Current (T j=150 C) VDS=80V ,VGS=0V - - 100 uA Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=10A - 13 21 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=80V - 2.2 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 6 - nC VDS=50V - 5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=10A - 17 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 15 - ns tf Fall Time RD=5Ω - 4.4 - ns Ciss Input Capacitance VGS=0V - 450 720 pF Coss Output Capacitance VDS=25V - 65 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Min. Typ. IS=10A, VGS=0V - - 1.3 V IS=10A, VGS=0V - 41 - ns dI/dt=100A/µs - 73 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9997GP-HF 20 20 12 8 V G = 3 .0V 4 10 V 7 .0 V 5.0 V 16 ID , Drain Current (A) 16 ID , Drain Current (A) T C = 150 o C 10 V 7 .0 V 5.0 V 4.5 V T C = 25 o C 4.5 V 12 8 V G = 3.0 V 4 0 0 0 1 2 3 4 0 5 2 4 6 8 10 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 150 2.4 I D =8A I D =8A V G =10V T C =25 o C 140 130 Normalized RDS(ON) RDS(ON) (mΩ) 2.0 120 110 1.6 1.2 0.8 100 90 0.4 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 10 6 T j =150 o C Normalized VGS(th) (V) IS(A) 8 T j =25 o C 4 1.2 0.8 0.4 2 0.0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9997GP-HF 10 C iss 8 I D = 10 A V DS = 80 V C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 1000 12 6 100 C oss C rss 4 2 0 10 0 4 8 12 16 20 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100 10 ID (A) 100us 1 1ms 10ms 100ms DC o T c =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4