Fairchild BD137 Medium power linear and switching application Datasheet

BD135/137/139
BD135/137/139
Medium Power Linear and Switching
Applications
• Complement to BD136, BD138 and BD140 respectively
TO-126
1
1. Emitter
2.Collector
3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: BD135
: BD137
: BD139
Value
45
60
80
Units
V
V
V
VCEO
Collector-Emitter Voltage
: BD135
: BD137
: BD139
45
60
80
V
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
1.5
A
ICP
Collector Current (Pulse)
3.0
A
IB
Base Current
0.5
A
PC
Collector Dissipation (TC=25°C)
12.5
W
PC
Collector Dissipation (Ta=25°C)
1.25
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: BD135
: BD137
: BD139
Test Condition
IC = 30mA, IB = 0
Min.
Typ.
Max.
45
60
80
Units
V
V
V
ICBO
Collector Cut-off Current
VCB = 30V, IE = 0
0.1
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
10
µA
hFE1
hFE2
hFE3
DC Current Gain
VCE = 2V, IC = 5mA
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 150mA
: ALL DEVICE
: ALL DEVICE
: BD135
: BD137, BD139
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 500mA, IB = 50mA
VBE(on)
Base-Emitter ON Voltage
VCE = 2V, IC = 0.5A
25
25
40
40
250
160
0.5
V
1
V
hFE Classification
Classification
6
10
16
hFE3
40 ~ 100
63 ~ 160
100 ~ 250
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD135/137/139
Typical Characteristics
100
60
50
40
30
20
10
0
10
100
400
IB
350
IC = 10
70
450
IC = 20 IB
hFE, DC CURRENT GAIN
80
500
VCE(sat)[mV], SATURATION VOLTAGE
VCE = 2V
90
300
250
200
150
100
50
0
1E-3
1000
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
10
1.1
1.0
IC MAX. (Pulsed)
)
(on
V
V BE
=5
V CE
0.7
0.6
0.5
0.4
0.3
1
100us
0.1
BD139
BD137
BD135
IC[A], COLLECTOR CURRENT
0.8
10us
IC MAX. (Continuous)
s
1m
t)
(sa
V BE 0 I B
1
IC =
0.9
DC
VBE[V], BASE-EMITTER VOLTAGE
0.01
0.2
0.01
0.1
1E-3
0.01
0.1
1
10
1
10
100
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Voltage
Figure 4. Safe Operating Area
20.0
PC[W], POWER DISSIPATION
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD135/137/139
Package Demensions
8.00 ±0.30
11.00
ø3.20 ±0.10
±0.20
3.25 ±0.20
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
16.10
±0.30
13.06
0.75 ±0.10
±0.20
1.75 ±0.20
1.60 ±0.10
+0.10
0.50 –0.05
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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SyncFET™
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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