BD135/137/139 BD135/137/139 Medium Power Linear and Switching Applications • Complement to BD136, BD138 and BD140 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD135 : BD137 : BD139 Value 45 60 80 Units V V V VCEO Collector-Emitter Voltage : BD135 : BD137 : BD139 45 60 80 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 1.5 A ICP Collector Current (Pulse) 3.0 A IB Base Current 0.5 A PC Collector Dissipation (TC=25°C) 12.5 W PC Collector Dissipation (Ta=25°C) 1.25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD135 : BD137 : BD139 Test Condition IC = 30mA, IB = 0 Min. Typ. Max. 45 60 80 Units V V V ICBO Collector Cut-off Current VCB = 30V, IE = 0 0.1 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 hFE3 DC Current Gain VCE = 2V, IC = 5mA VCE = 2V, IC = 0.5A VCE = 2V, IC = 150mA : ALL DEVICE : ALL DEVICE : BD135 : BD137, BD139 VCE(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA VBE(on) Base-Emitter ON Voltage VCE = 2V, IC = 0.5A 25 25 40 40 250 160 0.5 V 1 V hFE Classification Classification 6 10 16 hFE3 40 ~ 100 63 ~ 160 100 ~ 250 ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD135/137/139 Typical Characteristics 100 60 50 40 30 20 10 0 10 100 400 IB 350 IC = 10 70 450 IC = 20 IB hFE, DC CURRENT GAIN 80 500 VCE(sat)[mV], SATURATION VOLTAGE VCE = 2V 90 300 250 200 150 100 50 0 1E-3 1000 0.1 1 10 IC[A], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 10 1.1 1.0 IC MAX. (Pulsed) ) (on V V BE =5 V CE 0.7 0.6 0.5 0.4 0.3 1 100us 0.1 BD139 BD137 BD135 IC[A], COLLECTOR CURRENT 0.8 10us IC MAX. (Continuous) s 1m t) (sa V BE 0 I B 1 IC = 0.9 DC VBE[V], BASE-EMITTER VOLTAGE 0.01 0.2 0.01 0.1 1E-3 0.01 0.1 1 10 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area 20.0 PC[W], POWER DISSIPATION 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD135/137/139 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E