MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Designed for broadband commercial and military applications using single ended circuits at frequencies to 500
MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters
for FM broadcast or TV channel frequency bands.
Rev. V1
Product Image
N-Channel enhancement mode
Guaranteed performance @ 500 MHz, 28 Vdc
Output power — 100 W
Power gain — 8.8 dB typ.
Efficiency — 55% typ.
100% ruggedness tested at rated output power
Low thermal resistance
Low Crss — 17 pF typ. @ VDS = 28 V
CASE 333–04, STYLE 2
1
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
2
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
3
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
4
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
5
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
6
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
7
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
9
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
10
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
11
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
12
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
13
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
14
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
15
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate–to–drain (Cgd),
and gate–to–source (Cgs). The PN junction formed during the fabrication of the MOSFET results in a junction
capacitance from drain–to–source (Cds).
These capacitances are characterized as input (Ciss),
output (Coss) and reverse transfer (Crss) capacitances
on datasheets. The relationships between the inter–
terminal capacitances and those given on data sheets
are shown below. The Ciss can be specified in two ways:
1.
2.
Drain shorted to source and positive voltage at
the gate.
Positive voltage of the drain in respect to source
and zero volts at the gate. In the latter case the
numbers are lower. However, neither method
represents the actual operating conditions in RF
applications.
DRAIN CHARACTERISTICS
One figure of merit for a FET is its static resistance in
the full–on condition. This on–resistance, VDS(on), occurs in the linear region of the output characteristic and is
specified under specific test conditions for gate–source
voltage and drain current. For MOSFETs, VDS(on) has a
positive temperature coefficient and constitutes an important design consideration at high temperatures, because
it contributes to the power dissipation within the device.
GATE CHARACTERISTICS
The gate of the MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The input resistance is very high — on the order of 109
ohms — resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive
voltage slightly in excess of the gate–to–source threshold
voltage, VGS(th).
Gate Voltage Rating — Never exceed the gate voltage rating (or any of the maximum ratings on the front
page). Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of this device are
essentially capacitors. Circuits that leave the gate open–
circuited or floating should be avoided. These conditions
can result in turn–on of the devices due to voltage build–
up on the input capacitor due to leakage currents or
pickup.
Gate Protection — These devices do not have an
internalmonolithic zener diode from gate–to–source. If
gate protection is required, an external zener diode is
recommended. Using a resistor to keep the gate–to–
source impedance low also helps damp transients and
serves another important function. Voltage transients on
the drain can be coupled to the gate through the parasitic
gate–drain capacitance. If the gate–to–source impedance and the rate of voltage change on the drain are
both high, then the signal coupled to the gate may be
large enough to exceed the gate–threshold voltage and
turn the device on.
HANDLING CONSIDERATIONS
When shipping, the devices should be transported
only in antistatic bags or conductive foam. Upon removal
from the packaging, careful handling procedures should
be adhered to. Those handling the devices should wear
grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs
should be handled by the case and not by the leads, and
when testing the device, all leads should make good
electrical contact before voltage is applied. As a final
note, when placing the FET into the system it is designed
for, soldering should be done with grounded equipment.
DESIGN CONSIDERATIONS
The MRF275L is a RF power N–channel enhancement mode field–effect transistor (FETs) designed for
HF, VHF and UHF power amplifier applications. M/ACOM RF MOSFETs feature a vertical structure with a
planar design. M/A-COM Application Note AN211A,
FETs in Theory and Practice, is suggested reading for
those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs
include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to
withstand severely mismatched loads without suffering
damage. Power output can be varied over a wide range
with a low power dc control signal.
DC BIAS
The MRF275L is an enhancement mode FET and,
therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for
16
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
optimum performance. The value of quiescent drain current
(IDQ) is not critical for many applications. The MRF275L was
characterized at IDQ = 100 mA, each side, which is the suggested minimum value of IDQ. For special applications such
as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit
and draws no current. Therefore, the gate bias circuit may
be just a simple resistive divider network. Some applications
Rev. V1
may require a more elaborate bias system.
GAIN CONTROL
Power output of the MRF275L may be controlled from its
rated value down to zero (negative gain) by varying the dc
gate voltage. This feature facilitates the design of manual
gain control, AGC/ALC and modulation systems.
17
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MRF275L
The RF MOSFET Line
100W, 500MHz, 28V
Rev. V1
M/A-COM Technology Solutions Inc. All rights reserved.
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M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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