DC COMPONENTS CO., LTD. MPSH10 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver. TO-92 .190(4.83) .170(4.33) Pinning o 1 = Base 2 = Emitter 3 = Collector 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 3 V Collector Current IC 50 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 20 - - V IC=100µA Collector-Emitter Breakdown Voltage BVCEO 15 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 3 - - V IE=10µA ICBO - - 0.1 µA VCB=20V Collector Cutoff Current Test Conditions IEBO - - 0.1 µA VEB=2V Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.5 V IC=4mA, IB=0.4mA Base-Emitter On Voltage VBE(on) - - 0.95 V IC=4mA, VCE=10V Emitter Cutoff Current DC Current Gain (1) hFE 60 - - - Transition Frequency fT 650 - - MHz Output Capacitance Cob - - 0.7 pF (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% IC=4mA, VCE=10V IC=4mA, VCB=10V, f=100MHz VCB=10V, f=1MHz