NPN Silicon AF Transistors BCP 54 ... BCP 56 For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 51 … BCP 53 (PNP) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) BCP 54 BCP 54-10 BCP 54-16 BCP 55 BCP 55-10 BCP 55-16 BCP 56 BCP 56-10 BCP 56-16 BCP 54 BCP 54-10 BCP 54-16 BCP 55 BCP 55-10 BCP 55-16 BCP 56 BCP 56-10 BCP 56-16 Q62702-C2117 Q62702-C2119 Q62702-C2120 Q62702-C2148 Q62702-C2122 Q62702-C2123 Q62702-C2149 Q62702-C2125 Q62702-C2106 B SOT-223 1) C E C For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BCP 54 ... BCP 56 Maximum Ratings BCP 54 Values BCP 55 BCP 56 VCE0 VCER 45 45 60 60 80 100 Collector-base voltage VCB0 45 60 100 Emitter-base voltage VEB0 5 Collector current IC 1 Peak collector current ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 ˚C1) Ptot 1.5 W Junction temperature Tj 150 ˚C Storage temperature range Tstg Parameter Symbol Collector-emitter voltage RBE ≤ 1 kΩ Unit V A mA – 65 … + 150 Thermal Resistance Junction - ambient1) Rth JA ≤ 72 Junction - soldering point Rth JS ≤ 17 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 K/W BCP 54 ... BCP 56 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 45 60 80 – – – – – – 45 60 100 – – – – – – 5 – – – – – – 100 20 µA – – 10 µA 25 – – 40 63 100 25 – 100 160 – 250 160 250 – DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCP 54 BCP 55 BCP 56 V(BR)CE0 V Collector-base breakdown voltage1) IC = 100 µA, IB = 0 BCP 54 BCP 55 BCP 56 V(BR)CB0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EB0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C ICB0 Emitter-base cutoff current VEB = 5 V IEB0 DC current gain IC = 5 mA, VCE = 2 V IC = 150 mA, VCE = 2 V BCP 54/BCP 55/BCP 56 BCP 54/BCP 55/BCP 56-10 BCP 54/BCP 55/BCP 56-16 IC = 500 mA, VCE = 2 V hFE Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA VCEsat – – 0.5 Base-emitter voltage1) IC = 500 mA, VCE = 2 V VBE – – 1 fT – 100 – nA – V AC characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 3 MHz BCP 54 ... BCP 56 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 10 V DC current gain hFE = f (IC) VCE = 2 V Collector cutoff current ICB0 = f (TA) VCB = 30 V Semiconductor Group 4 BCP 54 ... BCP 56 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Permissible pulse load Ptot max/Ptot DC = f (tp) Semiconductor Group 5