SBD T y p e : C20T 20T10Q 10Q OUTLINE DRAWING FEATURES *SQUARE-PAK TO-263AB(SMD) Packaged in 24mm Tape and Reel *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Approx Net Weight: 1.4g Symbol C20T10Q VRRM Average Rectified Output Current IO RMS Forward Current IF(RMS) Surge Forward Current IFSM Operating JunctionTemperature Range Storage Temperature Range Tjw Tstg 20 180 Unit 100 50 Hz Full Sine Wave Tc=120°C Resistive Load 22.2 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 V A A A °C °C Electrical • Thermal Characteristics Characteristics Symbol Peak Reverse Current IRM Peak Forward Voltage VFM Thermal Resistance Conditions Tj= 25°C, VRM= VRRM per arm Tj= 25°C, IFM= 10 A per arm Rth(j-c) Junction to Case Min. Typ. Max. Unit - - 1 mA - - 0.88 V - - 1.5 °C /W C_T_ OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE C20T10Q/C20T10Q-11A (per Arm) INSTANTANEOUS FORWARD CURRENT (A) 50 20 Tj=25°C Tj=150°C 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE (V) 0° θ 180° AVERAGE FORWARD POWER DISSIPATION CONDUCTION ANGLE C20T10Q/C20T10Q-11A (Total) AVERAGE FORWARD POWER DISSIPATION (W) 20 RECT 180° SINE WAVE 16 12 8 4 0 0 4 8 12 16 AVERAGE FORWARD CURRENT (A) 20 24 PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 °C C20T10Q/C20T10Q-11A (per Arm) PEAK REVERSE CURRENT (mA) 50 20 10 5 0 20 40 60 80 100 120 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION C20T10Q/C20T10Q-11A (Total) AVERAGE REVERSE POWER DISSIPATION (W) 3.5 RECT 180° 3.0 2.5 2.0 SINE WAVE 1.5 1.0 0.5 0 0 20 40 60 REVERSE VOLTAGE (V) 80 100 120 0° θ 180° AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE CONDUCTION ANGLE V R M= 100V C20T10Q/C20T10Q-11A (Total) 24 AVERAGE FORWARD CURRENT (A) RECT 180° SINE WAVE 20 16 12 8 4 0 0 25 50 75 100 125 150 CASE TEMPERATURE (°C) SURGE CURRENT RATINGS f=50Hz,Sine Wave,Non-Repetitive,No Load C20T10Q/C20T10Q-11A SURGE FORWARD CURRENT (A) 200 160 120 80 40 I FSM 0.02s 0 0.02 0.05 0.1 0.2 TIME (s) 0.5 1 2 JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5° C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue C20T10Q/C20T10Q-11A (per Arm) JUNCTION CAPACITANCE (pF) 500 200 100 50 0.5 1 2 5 10 20 REVERSE VOLTAGE (V) 50 100 200