AP9620GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On Resistance D D ▼ Capable of 2.5V Drive D D ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free SO-8 S BVDSS -20V RDS(ON) 20mΩ ID -9.5A S S Description AP9620 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D G S The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage 3 ID@TA=25℃ Drain Current, VGS @ 4.5V ID@TA=70℃ Drain Current, VGS @ 4.5V3 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation Linear Derating Factor Rating Units -20 V ±8 V -9.5 A -7.6 A -76 A 2.5 W 0.02 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 50 ℃/W 1 201501122 AP9620GM-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -20 - - V VGS=-4.5V, ID=-9.5A - - 20 mΩ VGS=-2.5V, ID=-6.0A - - 35 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA - - -1 V gfs Forward Transconductance VDS=-10V, ID=-9.5A - 28 - S IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 C) VDS=-16V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS= ± 8V - - ±100 nA Qg Total Gate Charge ID=-9.5A - 30 - nC Qgs Gate-Source Charge VDS=-10V - 6 - nC Qgd Gate-Drain ("Miller") Charge VGS=-5V - 3.5 - nC td(on) Turn-on Delay Time VDS=-10V - 26 - ns tr Rise Time ID=-9.5A - 500 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=-4.5V - 70 - ns tf Fall Time RD=1.05Ω - 300 - ns Ciss Input Capacitance VGS=0V - 2158 - pF Coss Output Capacitance VDS=-15V - 845 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF o Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Forward On Voltage 2 Test Conditions Min. Typ. Max. Units VD=VG=0V , VS=-1.2V - - -2.08 A Tj=25℃, IS=-2.5A, VGS=0V - - -1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9620GM-HF 100 120 -10V T A =25 o C -10V T A =150 o C -8.0V 80 -8.0V -ID , Drain Current (A) -ID , Drain Current (A) 90 -6.0V 60 V GS =-4.0V 60 -6.0V V GS =-4.0V 40 30 20 0 0 0 2 4 0 6 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 40 I D =-9.5A V GS =4.5V I D =-9.5A T A =25 ℃ 1.4 Normalized R DS(ON) 35 RDS(ON) (mΩ ) 2 30 25 1.2 1.0 0.8 20 0.6 15 1 2 3 4 5 -V GS (V) Fig 3. On-Resistance v.s. Gate Voltage 6 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 AP9620GM-HF 3 10 2.5 2 6 PD (W) -ID , Drain Current (A) 8 1.5 4 1 2 0.5 0 0 25 50 75 100 125 150 0 30 60 90 120 150 o o T c , Case Temperature ( C) T c , Case Temperature ( C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1 1000 Normalized Thermal Response (R thja) Duty Factor = 0.5 100 100us 10 -ID (A) 1ms 10ms 1 100ms 1s 10s DC 0.1 T A =25 o C Single Pulse 0.1 0.1 0.05 0.02 PDM 0.01 0.01 t Single Pulse T Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125oC/W 0.001 0.01 0.1 0.2 1 10 -V DS (V) Fig 7. Maximum Safe Operating Area 100 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance 4 AP9620GM-HF f=1.0MHz 7 10000 I D =-9.5A V DS =-10V 5 Ciss 4 C (pF) -VGS , Gate to Source Voltage (V) 6 1000 Coss 3 2 Crss 1 100 0 0 5 10 15 20 25 30 35 1 40 5 9 13 17 21 25 29 -V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 1 100.00 0.8 10.00 0.6 -VGS(th) (V) -IS(A) T j =150 o C o T j =25 C 1.00 0.4 0.10 0.2 0.01 0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 5 AP9620GM-HF VDS 90% RD VDS D RG TO THE OSCILLOSCOPE 0.5 x RATED VDS G 10% S VGS VGS -5V td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS QG TO THE OSCILLOSCOPE D 0.5 x RATED VDS -4.5V QGS G S QGD VGS -1~-3mA I G I D Charge Fig 15. Gate Charge Circuit Q Fig 16. Gate Charge Waveform 6 AP9620GM-HF MARKING INFORMATION Part Number 9620GM YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 7