HSMC HLB124E Npn epitaxial planar transistor Datasheet

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6727
Issued Date : 1998.07.01
Revised Date : 2002.01.07
Page No. : 1/4
HLB124E
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB124E is designed for high voltage, high speed switching inductive
circuits, and amplifier applications.
Features
TO-220
• High Speed Switching
• Low Saturation Voltage
• High Reliability
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................................................ +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 35 W
• Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage ................................................................................................. 600 V
BVCEO Collector to Emitter Voltage .............................................................................................. 400 V
BVEBO Emitter to Base Voltage ....................................................................................................... 8 V
IC Collector Current (DC)................................................................................................................... 2 A
IC Collector Current (Pulse)............................................................................................................... 4 A
IB Base Current (DC)..........................................................................................................................1 A
IB Base Current (Pulse) ..................................................................................................................... 2 A
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Min.
600
400
8
10
10
6
15
Typ.
-
Max.
10
10
0.3
0.8
0.9
1.2
40
-
Unit
V
V
V
uA
uA
V
V
V
V
MHz
Test Conditions
IC=1mA
IC=10mA
IE=1mA
VCB=600V
VEB=9V, IC=0
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
VCE=5V, IC=0.3A
VCE=5V, IC=0.5A
VCE=5V, IC=1A
VCE=10V, IC=0.3, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE1
Rank
Range
HLB124E
B1
10~17
B2
13~22
B3
18~27
B4
23~32
B5
28~37
B6
33~40
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE6727
Issued Date : 1998.07.01
Revised Date : 2002.01.07
Page No. : 2/4
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
100000
100
o
o
75 C
Saturation Voltage (mV)
125 C
o
hFE
25 C
10
10000
o
75 C
1000
o
125 C
o
25 C
100
hFE @ VCE=5V
VCE(sat) @ IC=10IB
1
10
1
10
100
1000
1
10000
10
Collector Current IC (mA)
100
1000
10000
Collector Current IC (mA)
On Voltage & Collector Current
Saturation Voltage & Collector Current
1000
10000
On Voltage (mV)
Saturation Voltage (mV)
VCE=5V
o
75 C
1000
o
25 C
o
125 C
VBE(sat) @ IC=10IB
100
100
1
10
100
1000
1
10000
Collector Current IC (mA)
10
100
1000
10000
Collector Current (mA)
Switching Time & Collector Current
Capacitance & Reverse-Biased Voltage
10
100
Switching Time (us)
Capacitance (Pf)
VCC=100V, IC=5IB1=5IB2
Cob
10
Ton
1
Tstg
Tf
1
0.1
1
10
Reverse Biased Voltage (V)
HLB124E
100
0.1
1
10
Collector Current (A)
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6727
Issued Date : 1998.07.01
Revised Date : 2002.01.07
Page No. : 3/4
Safe Operating Area
Collector Current (mA)
10000
1000
PT=1 ms
100
PT=100 ms
PT=1 s
10
1
1
10
100
1000
Forward Voltage (V)
HLB124E
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE6727
Issued Date : 1998.07.01
Revised Date : 2002.01.07
Page No. : 4/4
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
B
A
D
E
C
HSMC Logo
Part Number
Date Code
Product Series
Rank
H
K
M
I
Style: Pin 1.Base 2.Collector 3.Emitter
3
G
N
2
1
4
P
O
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
*: Typical
Inches
Min.
Max.
0.2197
0.2949
0.3299
0.3504
0.1732
0.185
0.0453
0.0547
0.0138
0.0236
0.3803
0.4047
*0.6398
DIM
A
B
C
D
E
G
H
Millimeters
Min.
Max.
5.58
7.49
8.38
8.90
4.40
4.70
1.15
1.39
0.35
0.60
9.66
10.28
*16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
*0.1508
0.0295
0.0374
0.0449
0.0551
*0.1000
0.5000
0.5618
0.5701
0.6248
Millimeters
Min.
Max.
*3.83
0.75
0.95
1.14
1.40
*2.54
12.70
14.27
14.48
15.87
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB124E
HSMC Product Specification
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