ON MCR218-6 Silicon controlled rectifiers reverse blocking thyristor Datasheet

MCR218−2, MCR218−4,
MCR218−6
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half-wave silicon gate-controlled, solid-state devices are needed.
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SCRs
8 AMPERES RMS
50 thru 400 VOLTS
Features
• Glass-Passivated Junctions
• Blocking Voltage to 400 Volts
• TO-220 Construction − Low Thermal Resistance, High Heat
•
G
A
Dissipation and Durability
Pb−Free Packages are Available*
C
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = *40 to 125°C, Gate Open)
MCR218−2
MCR218−4
MCR218−6
VDRM,
VRRM
On-State RMS Current
(180° Conduction Angles; TC = 70°C)
IT(RMS)
8.0
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
ITSM
100
A
Circuit Fusing Considerations (t = 8.3 ms)
I2t
26
A2s
PGM
5.0
W
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, TC = 70°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to +150
°C
Forward Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 70°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 70°C)
Value
Unit
50
200
400
A
1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 4
4
V
1
2
TO−220AB
CASE 221A−07
STYLE 3
3
A
Y
WW
MCR218x
G
AKA
AY WW
MCR218x−G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
x = 2, 4 or 6
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MCR218−2
TO220AB
500 Units/Bulk
MCR218−2G
TO220AB
(Pb−Free)
500 Units/Bulk
MCR218−4
TO220AB
500 Units/Bulk
MCR218−4G
TO220AB
(Pb−Free)
500 Units/Bulk
MCR218−6
TO220AB
500 Units/Bulk
MCR218−6G
TO220AB
(Pb−Free)
500 Units/Bulk
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR218/D
MCR218−2, MCR218−4, MCR218−6
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction−to−Case
Max
Unit
RqJC
2.0
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
10
2.0
mA
mA
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
TJ = 25°C
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 125°C
IDRM, IRRM
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 2)
(ITM = 16 A Peak)
VTM
−
1.5
1.8
V
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ohms)
IGT
−
10
25
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ohms)
VGT
−
−
1.5
V
Gate Non−Trigger Voltage
(Rated 12 V, RL = 100 Ohms, TJ = 125°C)
VGD
0.2
−
−
V
IH
−
16
30
mA
dv/dt
−
100
−
V/ms
Holding Current
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. Pulse Test: Pulse Width = 1.0 ms, Duty Cycle ≤ 2%.
Voltage Current Characteristic of SCR
+ Current
Anode +
VTM
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
on state
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
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2
IH
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
°
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (C)
MCR218−2, MCR218−4, MCR218−6
115
α
α = CONDUCTION ANGLE
105
95
dc
85
α = 30°
75
0
60°
90° 120°
180°
12
α
dc
α = Conduction Angle
9.0
180°
120°
60°
6.0
90°
α = 30°
3.0
0
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
Figure 1. Current Derating
Figure 2. On−State Power Dissipation
2
3
4
5
6
7
8
V GT , NORMALIZED GATE TRIGGER VOLTAGE
3.0
2.0
VD = 12 Vdc
1.5
1.0
0.9
0.7
0.5
0.4
0.3
−60
15
2.0
3.0
4.0
5.0
6.0
IT(AV), AVG. ON-STATE CURRENT (AMPS)
1
−40
−20
0
20
40
60
80
100
120
140
1.0
0
VD = 12 Vdc
1.0
0.9
0.7
0.5
0.4
0.3
−60
−40
−20
0
20
60
80
100
Figure 4. Typical Gate Trigger Voltage
versus Temperature
3.0
2.0
VD = 12 Vdc
1.5
1.0
0.9
0.7
0.5
−20
40
TJ, JUNCTION TEMPERATURE (°C)
4.0
−40
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Holding Current
versus Temperature
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3
8.0
1.2
Figure 3. Typical Gate Trigger Current
versus Temperature
0.4
−60
7.0
1.3
TJ, JUNCTION TEMPERATURE (°C)
I H , NORMALIZED HOLDING CURRENT (mA)
I GT , NORMALIZED GATE TRIGGER CURRENT (mA)
P(AV), AVERAGE ON-STATE POWER DISSIPATION
(WATTS)
125
120
140
120
140
MCR218−2, MCR218−4, MCR218−6
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
−T−
B
F
T
SEATING
PLANE
C
S
4
Q
A
1 2 3
U
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
CATHODE
ANODE
GATE
ANODE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MCR218/D
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