CYStech Electronics Corp. Spec. No. : C930N6 Issued Date : 2013.11.06 Revised Date : Page No. : 1/8 Dual N-Channel Enhancement Mode MOSFET MTA17A02CDN6 BVDSS ID Features • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package RDSON (TYP.) VGS=4.5V VGS=4.5V, ID=6A VGS=4.0V, ID=6A VGS=3.0V, ID=6A VGS=2.5V, ID=6A 20V 6A 16.1mΩ 16.7mΩ 18.4 mΩ 20.2 mΩ Equivalent Circuit MTA17A02CDN6 G：Gate S：Source D：Drain Ordering Information Device MTA17A02CDN6-0-T1-G Package SOT-26 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTA17A02CDN6 CYStek Product Specification Spec. No. : C930N6 Issued Date : 2013.11.06 Revised Date : Page No. : 2/8 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS Continuous Drain Current @ VGS=4.5V TA=25 °C TA=70 °C (Note 1) (Note 1) Pulsed Drain Current (Note 2, 3) ID IDM TA=25 °C TA=70 °C Operating Junction Temperature and Storage Temperature Range Total Power Dissipation (Note 1) PD Tj, Tstg Limits 20 ±10 6 4.8 24 1.25 0.8 -55~+150 Unit V A W °C Thermal Data Parameter Thermal Resistance, Junction-to-ambient, max Symbol Value Unit (Note 1) RθJA 100 °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤10sec. 156℃/W when mounted on minimum copper pad. 2.Pulse width limited by maximum junction temperature. 3.Pulse Width ≤300μs, Duty Cycle≤2% Electrical Characteristics (Ta=25°C, unless otherwise noted) Symbol Static BVDSS ΔBVDSS/ΔTj VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd MTA17A02CDN6 Min. Typ. Max. Unit 20 0.5 - 0.2 0.63 16.1 16.7 18.4 20.2 15 1.0 ±10 1 10 26 27 30 32 - V V/℃ V - 365 75 30 260 670 3850 1800 7 1.5 1.5 - Test Conditions S VGS=0, ID=250μA Reference to 25℃, ID=250μA VDS=VGS, ID=250μA VGS=±10V, VDS=0 VDS=16V, VGS=0, Tj=25℃ VDS=16V, VGS=0, Tj=55℃ ID=6A, VGS=4.5V ID=6A, VGS=4V ID=6A, VGS=3V ID=6A, VGS=2.5V VDS=5V, ID=6A pF VDS=10V, VGS=0, f=1MHz ns VDS=10V, ID=1A, VGS=4.5V, RG=6Ω nC VDS=16V, ID=6A, VGS=4.5V μA mΩ CYStek Product Specification CYStech Electronics Corp. Source-Drain Diode *IS *ISM *VSD - 0.8 1.7 5 1.2 Spec. No. : C930N6 Issued Date : 2013.11.06 Revised Date : Page No. : 3/8 A V IS=3A,VGS=0V *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTA17A02CDN6 CYStek Product Specification Spec. No. : C930N6 Issued Date : 2013.11.06 Revised Date : Page No. : 4/8 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.6 30 BVDSS, Normalized Drain-Source Breakdown Voltage VGS=2V ID, Drain Current(A) 25 5V, 4.5V,4V,3.5V,3V 20 15 V GS=1.5V 10 1.4 1.2 1 0.8 ID=250μA, VGS=0V 0.6 5 0.4 0 0 1 2 3 4 VDS , Drain-Source Voltage(V) -75 -50 -25 5 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 100 VGS=1.5V VGS=1.8V VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(mΩ) 1000 2.5V 3V 4V 10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 700 2.4 600 R DS(ON), Normalized Static DrainSource On-State Resistance R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=6A 500 400 300 200 100 VGS=4.5V, ID=6A 2 1.6 1.2 0.8 RDS(ON) @ Tj=25°C : 15 mΩ 0.4 0 0 MTA17A02CDN6 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C930N6 Issued Date : 2013.11.06 Revised Date : Page No. : 5/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss C oss 100 Crss 1.6 ID=250μA 1.4 1.2 1 0.8 0.6 0.4 10 0.1 1 10 VDS , Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current 75 100 125 150 175 VDS=16V ID=6A 10 1 8 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 50 Gate Charge Characteristics VDS=5V VDS=10V 0.1 Pulsed Ta=25°C 0.01 0.001 6 4 2 0 0.01 0.1 1 ID, Drain Current(A) 0 10 4 8 12 16 Total Gate Charge---Qg(nC) 20 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 7 RDS(ON) Limit 100μs 1ms 10ms 1 100ms 1s 0.1 TA=25°C, Tj(max)=150°C, VGS=4.5V, RθJA=100°C/W Single Pulse 0.01 DC ID, Maximum Drain Current(A) 100 ID, Drain Current(A) 25 10 100 10 0 Tj, Junction Temperature(°C) 6 5 4 3 2 1 TA=25°C, VGS=4.5V, RθJA=100°C/W 0 0.001 0.01 MTA17A02CDN6 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C930N6 Issued Date : 2013.11.06 Revised Date : Page No. : 6/8 Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 500 24 VDS=5V 450 Peak Transient Power (W) ID, Drain Current (A) 20 16 12 8 4 TJ(MAX) =150°C TA=25°C θJA=100°C/W 400 350 300 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 VGS, Gate-Source Voltage(V) 3 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 1000 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.01 0.1 0.05 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=100 °C/W 0.02 0.01 0.001 Single Pulse 0.0001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) Recommended Soldering Footprint MTA17A02CDN6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C930N6 Issued Date : 2013.11.06 Revised Date : Page No. : 7/8 Reel Dimension Carrier Tape Dimension MTA17A02CDN6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C930N6 Issued Date : 2013.11.06 Revised Date : Page No. : 8/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTA17A02CDN6 CYStek Product Specification Spec. No. : C930N6 Issued Date : 2013.11.06 Revised Date : Page No. : 9/8 CYStech Electronics Corp. SOT-26 Dimension Marking: Device Name ● 17A02 □□□□ ● Date Code 6-Lead SOT-26 Plastic Surface Mounted Package CYStek Package Code: N6 Style: Pin 1. Source 1 Pin 2. Drain 1 / Drain 2 Pin 3. Source 2 Pin 4. Gate 2 Pin 5. Drain 1 / Drain 2 Pin 6. Gate 1 Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 DIM A A1 A2 b c D Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 DIM E E1 e e1 L θ Millimeters Min. Max. 1.500 1.700 2.650 2.950 0.950 (BSC) 1.800 2.000 0.300 0.600 0° 8° (S1) (D1 / D2) (S2) (G2) (D 1 / D2) (G1) Inches Min. Max. 0.059 0.067 0.104 0.116 0.037 (BSC) 0.071 0.079 0.012 0.024 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTA17A02CDN6 CYStek Product Specification