DSK BYT56B High efficiency ectifier Datasheet

Diode Semiconductor Korea BYT56A(Z)--- BYT56M(Z)
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 3.0 A
HIGH EFFICIENCY ECTIFIERS
FEATURES
Fast recovery times
Ul 90V0 flame retardant epoxy molding compound
Diffused junction
Low cost
DO - 27
High surge current capability
Bevel round chip, aualanche operation
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Dimensions in millimeters
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYT
56A
BYT
56B
BYT
56D
BYT
56G
BYT
56J
BYT
56K
BYT
56M
UNITS
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
IF(AV)
3.0
A
IFSM
150.0
A
VF
1.4
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ=125
Maximum instantaneous forw ard voltage
@ 3.0A
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance
(Note2)
CJ
Typical thermal resistance
(Note3)
Operating junction temperature range
Storage temperature range
10.0
IR
A
150.0
100
75
ns
50
RθJA
30
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 150
pF
/W
NOTE: 1. Measured with IF=0.5A, IR=1A, I rr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
BYT56A(Z)--- BYT56M(Z)
FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
t rr
10
N 1.
50
N 1.
+0.5A
D.U.T.
(+)
0
PULSE
GENERATOR
(NOTE2)
(+)
25VDC
(approx)
(-)
OSCILLOSCOPE
(NOTE 1)
1
NONINDUCTIVE
-0.25A
(-)
-1.0A
1 cm
NOTES:1.RISETIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF
2.RISETIME=10ns MAX.source IMPEDANCE=50Ω.
SET TIME BASEFOR 20/30 ns/cm
B YT56J - BY T56M
100
70
50
BYT56A - BYT56G
TJ=25
10
1
.1
.2
.4
1 .0
2
1
40
20
40
REVERSE VOLTAGE,VOLTS
AVERAGE FORWARD CURRENT.
AMPERES
FIG.4 -- TYPICAL FORWARD CURRENT
DERATING CURVE
6
S ig le p h a s e h a lf
w ave 60 H z
R e s is tiv e o r
In d u c tiv e lo a d
5
4
3
2
0
25
50
75
100
125
150 175
AMBIENT TEMPERATURE( )
100
INSTANTANEOUS FORWARD CURRENT
AMPERES
JUNCTION CAPACITANCE,pF
200
FIG.3 --PEAK FORWARD SURGE CURRENT
PEAKFORWARD SURGE CURRENT
FIG.2 -- TYPICAL JUNCTION CAPACTTANCE
200
TJ=25
8 .3 m s S in gle h alf sine w a ve
150
100
50
0
1
10
100
1000
NUMBER OF CYCLES AT 60Hz
FIG.5--TYPICAL FORWARD CHARACTERISTIC
100
10
T J=25
Pulse Width=300
s
1
0.1
0.01
0.4
0.6
1.2
1.4
1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
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