Diode Semiconductor Korea BYT56A(Z)--- BYT56M(Z) VOLTAGE RANGE: 50 --- 1000 V CURRENT: 3.0 A HIGH EFFICIENCY ECTIFIERS FEATURES Fast recovery times Ul 90V0 flame retardant epoxy molding compound Diffused junction Low cost DO - 27 High surge current capability Bevel round chip, aualanche operation MECHANICAL DATA Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Dimensions in millimeters Weight: 0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BYT 56A BYT 56B BYT 56D BYT 56G BYT 56J BYT 56K BYT 56M UNITS Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 3.0 A IFSM 150.0 A VF 1.4 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ=125 Maximum instantaneous forw ard voltage @ 3.0A Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 Maximum reverse recovery time (Note1) trr Typical junction capacitance (Note2) CJ Typical thermal resistance (Note3) Operating junction temperature range Storage temperature range 10.0 IR A 150.0 100 75 ns 50 RθJA 30 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 pF ／Ｗ NOTE: 1. Measured with IF=0.5A, IR=1A, I rr=0.25A. 2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea BYT56A(Z)--- BYT56M(Z) FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC t rr 10 N 1. 50 N 1. +0.5A D.U.T. (+) 0 PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -0.25A (-) -1.0A 1 cm NOTES:1.RISETIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF 2.RISETIME=10ns MAX.source IMPEDANCE=50Ω. SET TIME BASEFOR 20/30 ns/cm B YT56J - BY T56M 100 70 50 BYT56A - BYT56G TJ=25 10 1 .1 .2 .4 1 .0 2 1 40 20 40 REVERSE VOLTAGE,VOLTS AVERAGE FORWARD CURRENT. AMPERES FIG.4 -- TYPICAL FORWARD CURRENT DERATING CURVE 6 S ig le p h a s e h a lf w ave 60 H z R e s is tiv e o r In d u c tiv e lo a d 5 4 3 2 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE( ) 100 INSTANTANEOUS FORWARD CURRENT AMPERES JUNCTION CAPACITANCE,pF 200 FIG.3 --PEAK FORWARD SURGE CURRENT PEAKFORWARD SURGE CURRENT FIG.2 -- TYPICAL JUNCTION CAPACTTANCE 200 TJ=25 8 .3 m s S in gle h alf sine w a ve 150 100 50 0 1 10 100 1000 NUMBER OF CYCLES AT 60Hz FIG.5--TYPICAL FORWARD CHARACTERISTIC 100 10 T J=25 Pulse Width=300 s 1 0.1 0.01 0.4 0.6 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE,VOLTS www.diode.kr