This product complies with the RoHS Directive (EU 2002/95/EC). DSA7003 Silicon PNP epitaxial planar type For low frequency output amplification Complementary to DSC7003 DSA8003 in MiniP3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Code MiniP3-F2-B Package dimension clicks here.→ Click! Packaging DSA7003×0L Embossed type (Thermo-compression sealing): 1000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO –60 V Collector-emitter voltage (Base open) VCEO –50 V Emitter-base voltage (Collector open) VEBO –5 V Collector current IC –1 A Peak collector current ICP –1.5 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Pin Name 1. Base 2. Collector 3. Emitter Marking Symbol: 4A cm2 Note) *: Printed circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion Absolute maximum rating without heat sink for PC is 0.5 W Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = –10 mA, IE = 0 –60 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Emitter-base voltage (Collector open) VEBO IE = –10 mA, IC = 0 –5 V Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0 hFE1 Forward current transfer ratio *1 *2 hFE2 – 0.1 VCE = –10 V, IC = –500 mA 120 VCE = –5 V, IC = –1 A 50 340 mA Collector-emitter saturation voltage *1 VCE(sat) IC = –500 mA, IB = –50 mA – 0.4 V Base-emitter saturation voltage *1 VBE(sat) IC = –500 mA, IB = –50 mA –1.2 V fT VCE = –10 V, IC = –50 mA 120 VCB = –10 V, IE = 0, f = 1 MHz 14.5 Transition frequency Collector output capacitance (Common base, input open circuited) Cob MHz 30 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Code R S 0 Rank R S No-rank hFE1 120 to 240 170 to 340 120 to 340 Marking Symbol 4AR 4AS 4A Product of no-rank is not classified and have no marking symbol for rank. Publication date: May 2012 Ver. EED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DSA7003 −1 200 −9 mA −8 mA Ta = 25°C −7 mA −6 mA IB = −10 mA −1 000 Collector current IC (mA) 1 000 750 500 250 0 −5 mA −800 −4 mA −3 mA −600 −2 mA −400 −1 mA −200 0 40 80 120 160 0 200 Ambient temperature Ta (°C) 0 −2 −4 VCE = −10 V −1 Ta = 85°C −800 Ta = 85°C −400 −102 −103 0 0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 Base-emitter voltage VBE (V) DSA7003_fT-IC fT IC 250 Transition frequency fT (MHz) −30°C −600 −200 Collector current IC (mA) VCE = −10 V Ta = 25°C 150 100 50 0 −10−1 −1 50 0 −1 −10 −10 −102 Collector current IC (mA) Ver. EED −102 −103 Collector current IC (mA) Cob VCB −30°C 200 100 DSA7003_Cob-VCB 25°C −1 000 −10 −30°C 150 −12 −1 200 Collector current IC (mA) Collector-emitter saturation voltage VCE(sat) (V) IC / IB = 10 −10−2 −1 25°C 200 IC VBE −10−1 2 −10 250 DSA7003_IC-VBE VCE(sat) IC 25°C −8 VCE = −10 V Ta = 85°C 300 Collector-emitter voltage VCE (V) DSA7003_VCEsat-IC −10 −6 hFE IC 350 −1.2 Collector output capacitance (Common base, input open circuited) Cob (pF) Collector power dissipation PC (mW) IC VCE Forward current transfer ratio hFE PC Ta 1 250 DSA7003_hFE-IC DSA7003_IC-VCE DSA7003_PC-Ta 30 IE = 0 f = 1 MHz Ta = 25°C 25 20 15 10 5 0 −1 −10 −100 Collector-base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. 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