Hittite HMC-XTB110 Gaas mmic passive x3 frequency multiplier, 24 - 30 ghz input Datasheet

HMC-XTB110
v00.1008
FREQUency MULTIPLIERS - Passive - CHIP
2
GaAs MMIC PASSIVE x3 FREQUENCY
MULTIPLIER, 24 - 30 GHz INPUT
Typical Applications
Features
This HMC-XTB110 is ideal for:
Conversion Loss: 19 dB
• FCC E-Band Communication Systems
Input Drive: +13 dBm
• Short-Haul / High Capacity Radios
Passive: No DC Bias Required
• Automotive Radar
Die Size: 1.1 x 1.4 x 0.1 mm
• Test & Measurement Equipment
General Description
Functional Diagram
The HMC-XTB110 is a monolithic X3 Passive
Frequency Multiplier which utilizes GaAs Shottky
Diode technology, and exhibits low conversion loss
and high Fo isolation. This wideband X3 multiplier
requires no DC power, and is targeted to high volume
applications where frequency X3 of a lower frequency
is more economical than directly generating a higher
frequency. All bond pads and the die backside are
Ti/Au metallized and the Shottky diode devices are
fully passivated for reliable operation. The HMC-XTB110
Passive X3 MMIC is compatible with conventional
die attach methods, as well as thermocompression
and
thermosonic
wire
bonding,
making
it ideal for MCM and hybrid microcircuit applications.
All data shown herein is measured with the chip in a
50 Ohm environment and contacted with RF probes.
Electrical Specifications*, TA = 25 °C, Pin = +13 dBm
Parameter
Min.
Typ.
Max.
Units
Frequency Range Input
24 - 30
GHz
Frequency Range Output
72 - 90
GHz
19
dB
Conversion Loss
*Unless otherwise indicated, all measurements are from probed die
2-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-XTB110
v00.1008
GaAs MMIC PASSIVE x3 FREQUENCY
MULTIPLIER, 24 - 30 GHz INPUT
Output Power
0
2
-1
-18
X3 OUPUT POWER (dBm)
X3 CONVERSION LOSS (dB)
-17
-19
-20
-21
-22
-23
-2
-3
-4
-5
-6
-7
-8
-9
-24
24
25
26
27
28
29
30
31
INPUT FREQUENCY (GHz)
24
25
26
27
28
29
30
31
INPUT FREQUENCY (GHz)
Absolute Maximum Ratings
RF Input Level
+18 dBm
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
FREQUency MULTIPLIERS - Passive - CHIP
x3 Conversion Loss
2-2
HMC-XTB110
v00.1008
GaAs MMIC PASSIVE x3 FREQUENCY
MULTIPLIER, 24 - 30 GHz INPUT
Pad Descriptions
FREQUency MULTIPLIERS - Passive - CHIP
2
Pad Number
Function
Description
1
RFIN
This pad is DC coupled
and matched to 50 Ohms.
2
RFOUT
This pad is DC coupled
and matched to 50 Ohms.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Outline Drawing
Die Packaging Information
[1]
Standard
Alternate
WP-2 (Waffle Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
2-3
Interface Schematic
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. BACKSIDE METALLIZATION: GOLD.
3. BACKSIDE METAL IS GROUND.
4. BOND PAD METALLIZATION: GOLD.
5. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
6. OVERALL DIE SIZE ±.002”
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-XTB110
GaAs MMIC PASSIVE x3 FREQUENCY
MULTIPLIER, 24 - 30 GHz INPUT
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
0.150mm (0.005”) Thick
Moly Tab
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have
fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
2
FREQUency MULTIPLIERS - Passive - CHIP
v00.1008
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2-4
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