PHILIPS BU2525DX Silicon diffused power transistor Datasheet

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to
32 kHz.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCESM
IC
ICM
Ptot
VCEsat
VCEO
ICsat
ts
Collector-emitter voltage peak value
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector-emitter voltage (open base)
Collector saturation current
Storage time
VBE = 0 V
PINNING - SOT399
PIN
base
2
collector
3
emitter
ICsat = 8.0 A; IB(end) = 1.1 A
PIN CONFIGURATION
DESCRIPTION
1
Ths ≤ 25 ˚C
IC = 8.0 A; IB = 1.6 A
case isolated
TYP.
MAX.
UNIT
8.0
3.0
1500
12
30
45
5.0
800
4.0
V
A
A
W
V
V
A
µs
SYMBOL
case
c
b
Rbe
e
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-55
-
1500
800
12
30
8
12
200
9
45
150
150
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
MAX.
UNIT
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
Rth j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
Rth j-a
Junction to ambient
in free air
35
-
K/W
1 Turn-off current.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all
three terminals to external
heatsink
R.H. ≤ 65 % ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
-
MAX.
UNIT
2500
V
-
22
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
72
7.5
800
110
55
13.5
-
218
-
mA
Ω
V
V
5
-
11
7
1.6
5.0
1.1
9.5
2.0
V
V
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
IEBO
REB
BVEBO
VCEOsust
Emitter cut-off current
Base-emitter resistance
Emitter-base breakdown voltage
Collector emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
VF
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 6.0 V; IC = 0 A
VEB = 6.0 V
IB = 600 mA
IB = O A;IC = 1OO mA;
L= 25 mH
IC = 8.0 A; IB = 1.6 A
IC = 8.0 A; IB = 1.6 A
IC = 1 A; VCE = 5 V
IC = 8 A; VCE = 5 V
IF = 8 A
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
145
-
pF
Switching times (32 kHz line
deflection circuit)
ICsat = 8.0 A; LC = 260 µH; Cfb = 13 nF;
IB(end) = 1.1 A; LB = 2.5 µH; -VBB = 4 V;
(-dIB/dt = 1.6 A/µs)
3.0
0.2
4.0
0.35
µs
µs
IF = 8 A; dIF/dt = 50 A/µs
16
-
V
VF = 5 V
410
-
ns
ts
tf
Turn-off storage time
Turn-off fall time
Vfr
Anti-parallel diode forward recovery
voltage
Anti-parallel diode forward recovery
time
tfr
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
ICsat
TRANSISTOR
IC
BU2525DX
+ 150 v nominal
adjust for ICsat
DIODE
t
Lc
IBend
IB
t
10us
D.U.T.
13us
LB
IBend
Cfb
32us
VCE
-VBB
Rbe
t
Fig.1. Switching times waveforms.
Fig.4. Switching times test circuit.
ICsat
BU2525DF
hFE
100
90 %
IC
Tj = 25 C
Tj = 125 C
5V
10 %
tf
10
t
ts
1V
IB
IBend
t
1
0.1
1
10
- IBM
Fig.2. Switching times definitions.
I
I
F
100
IC / A
Fig.5. Typical DC current gain. hFE = f (IC)
parameter VCE
1.2
F
VBESAT / V
BU2525AF
Tj = 25 C
1.1
Tj = 125 C
1
10%
0.9
time
t fr
V
0.8
IC/IB=
0.7
F
3
0.6
V
5V
V
fr
4
0.5
F
5
0.4
0.1
time
Fig.3. Definition of anti-parallel diode Vfr and tfr
September 1997
1
IC / A
10
Fig.6. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
1
VCESAT / V
BU2525DX
BU2525AF
Eoff / uJ
1000
IC = 8 A
IC/IB =
0.9
BU2525AF
5
0.8
4
0.7
7A
3
0.6
100
0.5
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0
1
0.1
10
100
10
0.1
1
IB / A
IC / A
Fig.7. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
1.2
VBESAT / V
Fig.10. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; f = 32 kHz
BU2525AF
Tj = 125 C
1
0.9
IC=
0.8
6A
5A
4A
0.6
0
1
2
IB / A
3
4
VCESAT / V
32 kHz
ts
IC =
8A
7A
0.1
Fig.8. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
10
BU2525AF
4
3
2
1
0
8A
0.7
ts, tf / us
12
11
10
9
8
7
6
5
Tj = 25 C
1.1
10
tf
1
IB / A
10
Fig.11. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
BU2525AF
120
Tj = 25 C
110
Tj = 125 C
100
90
Normalised Power Derating
PD%
with heatsink compound
80
70
8A
60
1
50
6A
40
5A
30
IC = 4 A
20
10
0
0.1
0.1
1
IB / A
0
10
40
60
80
Ths / C
100
120
140
Fig.12. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Ths)
Fig.9. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
September 1997
20
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
10
Zth / (K/W)
BU2525DX
BU2525AF
IC / A
BU2525AF
100
tp =
0.5
1
0.1
0.2
0.1
0.05
ICM
0.02
ICDC
40 us
PD
0.01
D=0
0.001
1E-06
= 0.01
tp
D=
1E-02
t/s
100 us
t
T
1E-04
10
tp
T
1E+00
Ptot
Fig.13. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
1
1 ms
0.1
10 ms
DC
0.01
1
10
100
1000 VCE / V
Fig.14. Forward bias safe operating area. Ths = 25 ˚C
ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
September 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DX
MECHANICAL DATA
Dimensions in mm
5.8 max
16.0 max
Net Mass: 5.88 g
3.0
0.7
4.5
3.3
10.0
27
max
25
25.1
25.7
22.5
max
5.1
2.2 max
18.1
min
4.5
1.1
0.4 M
2
0.95 max
5.45
5.45
3.3
Fig.15. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.200
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