Data sheet, BGA416, June 2002 BGA 416 R F C a s c o d e A m p l i f ie r MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2002-06-14 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA416 Data sheet Revision History: 2002-06-14 Previous Version: 2001-10-30 Page Subjects (major changes since last revision) Preliminary status removed For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] RF Cascode Amplifier BGA416 Features 3 • GMA = 23dB at 900MHz • Ultra high reverse isolation, 62 dB at 900MHz • Low noise figure, F50Ω = 1.3dB at 900MHz • On chip bias circuitry, 5.5 mA bias current at VCC = 3V • Typical supply voltage: 2.5 to 5.0V • SIEGET®-25 technology 4 2 1 VPS05178 Applications • Buffer amplifiers • LNAs • Oscillator active devices Description GND, 1 BGA416 is a monolithic silicon cascode amplifier with high reverse isolation. A bias network is integrated for simplified biasing. Bias RFout, 4 RFin, 2 GND, 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Marking Chip BGA416 SOT143 C1s T0553 Data sheet 4 BGA416 Maximum Ratings Parameter Symbol Value Unit Voltage at pin RFout VOUT 6 V Current into pin RFin IIN 0.5 mA Device current 1) ID 20 mA Input power PIN 8 dBm Total power dissipation, TS < 123°C 2) Ptot 100 mW Junction temperature Tj 150 °C Ambient temperature range TA -65 ... +150 °C Storage temperature range TSTG -65 ... +150 °C Thermal resistance: junction-soldering point Rth JS 270 K/W Notes: All Voltages refer to GND-Node 1) Device current is equal to current into pin RFout 2) TS is measured on the ground lead at the soldering point Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 1) VCC=3V, unless otherwise specified Parameter Symbol min. typ. max. Unit Maximum available power gain f=0.9GHz f=1.8GHz GMA 23 14 dB Insertion power gain f=0.9GHz f=1.8GHz |S21|2 17 11 dB Reverse isolation f=0.9GHz f=1.8GHz |S12| 62 40 dB Noise figure (ZS=50Ω) f=0.9GHz f=1.8GHz F50Ω 1.3 1.6 dB Output power at 1dB gain compression f=0.9GHz (ZS=ZL=50Ω) f=1.8GHz P-1dB Output third order intercept point f=0.9GHz (ZS=ZL=50Ω) f=1.8GHz OIP3 dBm 14 14 Device current Data sheet dBm -3 -3 ID 5 5.5 mA BGA416 Reference Plane In GND Bias-T RFin VCC N.C. ID Bias-T RFout GND Out Reference Plane Top View Fig. 1: Test Circuit for Electrical Characteristics and S-Parameter S-Parameter VCC=3V, ID=5.5mA (see Electrical Characteristics for conditions) Frequency S11 [GHz] Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.1 0.7881 -6.9 12.1310 166.8 0.0017 10.9 0.8974 -4.9 0.2 0.7832 -13.3 11.9280 156.0 0.0004 -16.6 0.8895 -9.0 0.4 0.6986 -23.8 10.3940 134.3 0.0009 41.6 0.8708 -17.5 0.6 0.6335 -31.4 8.9867 116.3 0.0016 20.7 0.8489 -25.7 0.8 0.5666 -37.3 7.5805 100.8 0.0006 -5.4 0.8143 -34.2 1.0 0.5158 -41.6 6.4187 87.7 0.0006 -7.2 0.7776 -42.1 1.2 0.4744 -44.5 5.4350 76.6 0.0014 -103.4 0.7257 -49.6 1.4 0.4503 -47.4 4.6957 66.2 0.0034 -132.9 0.6850 -56.7 1.6 0.4272 -50.4 4.0607 57.5 0.0059 -143.2 0.6530 -64.0 1.8 0.4204 -53.3 3.5686 49.2 0.0092 -152.6 0.6195 -71.1 2.0 0.4056 -56.4 3.1353 41.0 0.0129 -156.9 0.5867 -78.2 2.4 0.4071 -63.5 2.4957 26.7 0.0233 -170.1 0.5298 -92.9 3.0 0.4168 -78.1 1.7687 6.0 0.0465 171.9 0.4562 -117.4 4.0 0.4615 -110.1 0.9839 -24.7 0.1017 143.4 0.3892 -163.8 5.0 0.5467 -148.7 0.4451 -46.1 0.1758 113.0 0.3894 152.0 6.0 0.6187 176.8 0.1983 -21.9 0.2483 84.2 0.4008 120.6 Data sheet 6 BGA416 2 Power Gain |S | , G = f(f) 21 ma V = 3V, I = 5.5mA CC Matching |S |, |S | = f(f) 11 22 V = 3V, I = 5.5mA D CC 40 D 0 S22 −1 35 G ma −2 30 22 |S |, |S | [dB] 20 |S21|2 15 −4 S11 −5 11 |S21|2, Gma [dB] −3 25 −6 −7 10 −8 5 −9 0 −10 0 1 2 3 4 0 1 Frequency [GHz] Reverse Isolation |S12| = f(f) V = 3V, I = 5.5mA CC 2 3 4 Frequency [GHz] Noise figure F = f(f) V = 3V, I = 5.5mA CC D Z =50Ω D S 0 3 −10 2.5 −20 2 F [dB] |S12| [dB] −30 −40 1.5 −50 1 −60 0.5 −70 −80 0 0 1 2 3 4 0 Frequency [GHz] Data sheet 0.5 1 1.5 2 Frequency [GHz] 7 2.5 3 BGA416 Device Current I = f(V D ) CC 12 11 10 9 8 I D [mA] 7 6 5 4 3 2 1 0 0 1 2 3 V CC 4 5 [V] Package Outline 1.1 MAX. 2.9 ±0.1 B 1.9 10˚ MAX. 1.3 ±0.1 2.6 MAX. +0.2 acc. to DIN 6784 10˚ MAX. 0.1 MAX. A +0.1 0.8 -0.05 0.55 -0.1 0.4 +0.1 -0.05 0.08...0.15 1.7 0.25 M B 2˚... 30˚ 0.20 Data sheet M A 8