Diode Semiconductor Korea MBR1020CT - - - MBR1060CT VOLTAGE RANGE: 20 - 60 V CURRENT: 10 A DUAL SCHOTTKY RECTIFIERS FEATURES TO-220AB 2.8± 0.1 High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . 4.5± 0.2 10.2± 0.2 1.4± 0.2 φ 3.8± 0.15 19.0± 0.5 High current capacity, low forward voltage drop. Guard ring for over voltage protection. 1 8.9± 0.2 Metal s ilicon junction, m ajority carrier conduction. PIN 2 3 2.6± 0.2 3.5± 0.3 13.8± 0.5 MECHANICAL DATA Cas e:JEDEC TO-220AB,m olded plas tic body 0.9± 0.1 Term inals :Leads, s olderable per MIL-STD-750, 1 1 0.5± 0.1 2.5± 0.1 Method 2026 Polarity: As m arked Weight: 0.071 ounce, 2.006 gram s PIN 1 PIN 1 PIN 1 PIN 3 Positive CT CASE PIN 2 PIN 3 Negative CT Suffix "A" Pos ition: Any CASE PIN 2 PIN 3 Doubler Suffix "D" CASE PIN 2 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. MBR MBR MBR MBR MBR MBR MBR UNITS 1020CT 1030CT 1035CT 1040CT 1045CT 1050CT 1060CT Maximum recurrent peak reverse voltage V RRM 20 30 35 40 45 50 60 V Maximum RMS V oltage V RMS 14 21 25 28 32 35 42 V Maximum DC blocking voltage V DC 20 30 35 40 45 50 60 V Maximum average forw ard total device11111111 m rectified current @TC = 120°C IF(AV) 10 A Peak forw ard surge current 8.3ms single half b sine-w ave superimposed on rated load IFSM 125 A Maximum forw ard voltage per leg (NOTE 1) (I F=5.0A,TC=125 ) VF (I F=5.0A ,TC=25 ) (I F=10 A ,TC=25 Maximum reverse current at rated DC blocking voltage ) @TC =25 @TC =125 Maximum thermal resistance per leg Operating junction temperature range Storage temperature range IR 0.57 0.70 0.70 0.80 0.84 0.95 0.1 15 RθJC 3.0 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 V mA K/W NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle. 2. 2.0µ s pulse width, f =1.0KH Z 3. Thermal resistance f rom junction to case. www.diode.kr Diode Semiconductor Korea FIG.1 -- FORWARD CURRENT DERATING CURVE PEAK FORWARD SURGE CURRENT,AMPERES Resistive or inductive Load AVERAGE FORWARD CURRENT,AMPERES cc FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PERLEG 150 12.5 10 7.5 5.0 2.5 0 MBR1020CT - - - MBR1060CT 0 50 100 150 125 100 75 50 25 0 CASE TEMPERATURE 40 10 Pulse Width=300µs 1% Duty Cycle 1 TJ=25 0.1 MBR1020CT-MBR1045CT MBR1050CT&MBR1060CT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.11.2 INSTANTANEOUS REVERSE CURRENT,MILLIAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES 10 100 FIG.4 -- TYPICAL REVERSE CHARACTERISTICS bn 111 40 10 TJ =125 1 TJ=75 0.1 0.01 MBR1020CT-MBR1045CT MBR1050CT&MBR1060CT TJ =25 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.6--TYPICAL TRANSIENT THERMAL IMPEDANCE PERLEG cc c 1FIG.5--TYPICAL JUNCTION CAPACITANCE PERLEG 4000 100 TJ=25 f=1.0MHz Vsig=50MVp-p 1000 100 10 0.1 MBR1020CT-MBR1045CT MBR1050CT&MBR1060CT 1 10 REVERSE VOLTAGE,VOLTS 100 TRANSIENT THERMAL IMPEDANCE, /W JUNCTION CAPACITANCE, pF 1 NUMBER OF CYCLES AT 60Hz FIG.3 -- TYPICAL INSTANTANEOUS FORWARD 11111vCHARACTERISTIC PERLEG TJ=125 TJ =TJmax. 8.3ms Single Half Sine Wave (JEDEC Method) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATON,Sec. www.diode.kr