Hynix HY5PS1G821M 1gb ddr2 sdram(ddp) Datasheet

HY5PS1G421(L)M
HY5PS1G821(L)M
1Gb DDR2 SDRAM(DDP)
HY5PS1G421(L)M
HY5PS1G821(L)M
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.2 / Oct. 2005
1
1HY5PS12421(L)M
HY5PS12821(L)M
Revision History
Revision No.
0.1
0.2
History
Draft Date
Remark
Initial Release
Mar.2003
Preliminary
Changed IDD Spec.(IDD2P & IDD6)
Feb. 2005
Preliminary
Corrected typo, Removed 667 speed bin
Oct. 2005
Rev. 0.2 / Oct. 2005
2
1HY5PS12421(L)M
HY5PS12821(L)M
Contents
1. Description
1.1 Device Features and Ordering Information
1.1.1 Key Feaures
1.1.2 Ordering Information
1.1.3 Ordering Frequency
1.2 Pin configuration
1.2.1 256M x4 DDR2 DDP Pin Configuration
1.2.2 128M x8 DDR2 DDP Pin Configuration
1.3 Pin Description
2. Functioanal Description
2.1 Simplified State Diagram
2.2 Functional Block Diagram
2.2.1 Functional Block Diagram(256M x4)
2.2.2 Functional Block Diagram(128M x8)
2.3 Basic Function & Operation of DDR2 SDRAM
2.3.1 Power up and Initialization
2.3.2 Programming the Mode and Extended Mode Registers
2.3.2.1 DDR2 SDRAM Mode Register Set(MRS)
2.3.2.2 DDR2 SDRAM Extended Mode Register Set
2.3.2.3 Off-Chip Driver(OCD) Impedance Adjustment
2.3.2.4 ODT(On Die Termination)
2.4 Bank Activate Command
2.5 Read and Write Command
2.5.1 Posted CAS
2.5.2 Burst Mode Operation
2.5.3 Burst Read Command
2.5.4 Burst Write Operation
2.5.5 Write Data Mask
2.6 Precharge Operation
2.7 Auto Precharge Operation
2.8 Refresh Commands
2.8.1 Auto Refresh Command
2.8.2 Self Refresh Command
2.9 Power Down
2.10 Asynchronous CKE Low Event
2.11 No Operation Command
2.12 Deselect Command
3. Truth Tables
3.1 Command Truth Table
3.2 Clock Enable(CKE) Truth Table for Synchronous Transistors
3.3 Data Mask Truth Table
4. Operating Conditions
4.1 Absolute Maximum DC Ratings
4.2 Operating Temperature Condition
Rev. 0.2 / Oct. 2005
3
1HY5PS12421(L)M
HY5PS12821(L)M
5. AC & DC Operating Conditions
5.1 DC Operation Conditions
5.1.1 Recommended DC Operating Conditions(SSTL_1.8)
5.1.2 ODT DC Electrical Characteristics
5.2 DC & AC Logic Input Levels
5.2.1 Input DC Logic Level
5.2.2 Input AC Logic Level
5.2.3 AC Input Test Conditions
5.2.4 Differential Input AC Logic Level
5.2.5 Differential AC output parameters
5.2.6 Overshoot / Undershoot Specification
5.3 Output Buffer Levels
5.3.1 Output AC Test Conditions
5.3.2 Output DC Current Drive
5.3.3 OCD default chracteristics
5.4 Default Output V-I Characteristics
5.4.1 Full Strength Default Pulldown Driver Characteristics
5.4.2 Full Strength Default Pullup Driver Chracteristics
5.4.3 Calibrated Output Driver V-I Characteristics
5.5 Input/Output Capacitance
6. IDD Specifications & Measurement Conditions
7. AC Timing Specifications
7.1 Timing Parameters by Speed Grade
7.2 General Notes for all AC Parameters
7.3 Specific Notes for dedicated AC parameters.
8 Package Dimensions
8.1 Package Dimension(x4, x8)
Rev. 0.2 / Oct. 2005
4
1HY5PS12421(L)M
HY5PS12821(L)M
1. Description
1.1 Device Features & Ordering Information
1.1.1 Key Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Dual Die Package( 512Mb DDR2 * 2)
VDD, VDDQ=1.8V +/- 0.1V
All inputs and outputs are compatible with SSTL_18 interface
Fully differential clock inputs (CK, /CK) operation
Double data rate interface
Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)
Differential Data Strobe (DQS, DQS)
Data outputs on DQS, DQS edges when read (edged DQ)
Data inputs on DQS centers when write(centered DQ)
On chip DLL align DQ, DQS and DQS transition with CK transition
DM mask write data-in at the both rising and falling edges of the data strobe
All addresses and control inputs except data, data strobes and data masks latched on the rising
edges of the clock
Programmable CAS latency 3, 4, 5 supported
Programmable additive latency 0, 1, 2, 3, 4 supported
Programmable burst length 4/8 with both nibble sequential and interleave mode
Internal 4bank operations with single pulsed RAS
Auto refresh and self refresh supported
tRAS lockout supported
8K refresh cycles /64ms
JEDEC standard 60ball FBGA(x4/x8)
Full strength driver option controlled by EMRS
On Die Termination supported
Off Chip Driver Impedance Adjustment supported
Read Data Strobe supported (x8 only)
Self-Refresh High Temperature Entry
Operating Frequency
Ordering Information
Part No.
HY5PS1G421(L)M-X*
HY5PS1G821(L)M-X*
Configuration Package
256Mx4
Grade
tCK(ns)
CL
tRCD
tRP
Unit
-E3
5
3
3
3
Clk
-C4
3.75
4
4
4
Clk
63Ball
128Mx8
Note: -X* is the speed bin, refer to the Operation
Frequency table for complete Part No.
Rev. 0.2 / Oct. 2005
5
1HY5PS12421(L)M
HY5PS12821(L)M
1.2 Pin Configuration
1.2.1 256Mx4 DDR2 DDP Pin Configuration
7
8
9
A
VSSQ
DQS
VDDQ
DM
B
DQS
VSSQ
NC
DQ1
VDDQ
C
VDDQ
DQ0
VDDQ
NC
VSSQ
DQ3
D
DQ2
VSSQ
NC
VDDL
VREF
VSS
E
VSSDL
CK
VDD
CKE0
WE
F
RAS
CK
ODT0
NC
BA0
BA1
G
CAS
CS0
CS1
CKE1
A10/AP
A1
H
A2
A0
VDD
VSS
A3
A5
J
A6
A4
ODT1
A7
A9
K
A11
A8
VSS
A12
NC
L
NC
A13
1
2
3
VDD
NC
VSS
NC
VSSQ
VDDQ
VDD
ROW AND COLUMN ADDRESS TABLE
Rev. 0.2 / Oct. 2005
ITEMS
256Mx4
# of Bank
4
Bank Address
BA0, BA1
Auto Precharge Flag
A10/AP
Row Address
A0 - A13
Column Address
A0-A9, A11
Page size
1 KB
6
1HY5PS12421(L)M
HY5PS12821(L)M
1.2.2 128Mx8 DDR2 DDP PIN CONFIGURATION
7
8
9
A
VSSQ
DQS
VDDQ
DM, RDQS
B
DQS
VSSQ
DQ7
DQ1
VDDQ
C
VDDQ
DQ0
VDDQ
DQ4
VSSQ
DQ3
D
DQ2
VSSQ
DQ5
VDDL
VREF
VSS
E
VSSDL
CK
VDD
CKE0
WE
F
RAS
CK
ODT0
NC
BA0
BA1
G
CAS
CS0
CS1
CKE1
A10
A1
H
A2
A0
VDD
VSS
A3
A5
J
A6
A4
ODT1
A7
A9
K
A11
A8
VSS
A12
NC
L
NC
A13
1
2
3
VDD
NU, RDQS
VSS
DQ6
VSSQ
VDDQ
VDD
ROW AND COLUMN ADDRESS TABLE
Rev. 0.2 / Oct. 2005
ITEMS
128Mx8
# of Bank
4
Bank Address
BA0, BA1
Auto Precharge Flag
A10/AP
Row Address
A0 - A13
Column Address
A0-A9
Page size
1 KB
7
1HY5PS12421(L)M
HY5PS12821(L)M
1.3 PIN DESCRIPTION
PIN
TYPE
DESCRIPTION
CK, CK
Input
Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK. Output (read) data
is referenced to the crossings of CK and CK (both directions of crossing).
CKE
Input
Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and
device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER
DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row
ACTIVE in any bank). CKE is synchronous for POWER DOWN entry and exit, and for SELF
REFRESH entry. CKE is asynchronous for SELF REFRESH exit, and for output disable. CKE
must be maintained high throughout READ and WRITE accesses. Input buffers, excluding
CK, CK and CKE are disabled during POWER DOWN. Input buffers, excluding CKE are disabled during SELF REFRESH. CKE is an SSTL_18 input, but will detect an LVCMOS LOW level
after Vdd is applied.
CS
Input
Chip Select : Enables or disables all inputs except CK, CK, CKE, DQS and DM. All commands
are masked when CS is registered high. CS provides for external bank selection on systems
with multiple banks. CS is considered part of the command code.
ODT
Input
On Die Termination Control : ODT enables on die termination resistance internal to the
DDR2 SDRAM. When enabled, on die termination is only applied to DQ, DQS, DQS, RDQS,
RDQS, and DM.
RAS, CAS, WE
Input
Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.
DM
(LDM, UDM)
Input
Input Data Mask : DM is an input mask signal for write data. Input Data is masked when DM
is sampled High coincident with that input data during a WRITE access. DM is sampled on
both edges of DQS, Although DM pins are input only, the DM loading matches the DQ and
DQS loading. For x8 device, the function of DM or RDQS/ RDQS is enabled by EMRS command.
BA0, BA1
Input
Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read, Write or PRECHARGE command is being applied. Bank address also determines if the mode register or
extended mode register is to be accessed during a MRS or EMRS cycle.
A0 ~ A13
Input
Address Inputs: Provide the row address for ACTIVE commands, and the column address
and AUTO PRECHARGE bit for READ/WRITE commands to select one location out of the
memory array in the respective bank. A10 is sampled during a precharge command to determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If
only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs
also provide the op code during MODE REGISTER SET commands.
DQ
Input/Output
Data input / output : Bi-directional data bus
Input/Output
Data Strobe : Output with read data, input with write data. Edge aligned with read data,
centered in write data. For the x16, LDQS correspond to the data on DQ0~DQ7; UDQS corresponds to the data on DQ8~DQ15. For the x8, an RDQS option using DM pin can be
enabled via the EMRS(1) to simplify read timing. The data strobes DQS, LDQS, UDQS, and
RDQS may be used in single ended mode or paired with optional complementary signals
DQS, LDQS,UDQS and RDQS to provide differential pair signaling to the system during both
reads and wirtes. An EMRS(1) control bit enables or disables all complementary data strobe
signals.
DQS, (DQS)
(UDQS),(UDQS)
(LDQS),(LDQS)
(RDQS),(RDQS)
No Connect : No internal electrical connection is present.
NC
VDDQ
Supply
DQ Ground
VDDL
Supply
DLL Power Supply : 1.8V +/- 0.1V
VSSDL
Supply
DLL Ground
VDD
Supply
Power Supply : 1.8V +/- 0.1V
VSS
Supply
Ground
VREF
Supply
Reference voltage for inputs for SSTL interface.
Rev. 0.2 / Oct. 2005
8
1HY5PS12421(L)M
HY5PS12821(L)M
-ContinuePIN
TYPE
DESCRIPTION
VDD
Supply
Power Supply : 1.8V +/- 0.1V
VSS
Supply
Ground
VREF
Supply
Reference voltage for inputs for SSTL interface.
In this data sheet, "differential DQS signals" refers to any of the following with A10 = 0 of EMRS(1)
x4 DQS/DQS
x8 DQS/DQS
if EMRS(1)[A11] = 0
if EMRS(1)[A11] = 1
x8 DQS/DQS, RDQS/RDQS,
"single-ended DQS signals" refers to any of the following with A10 = 1 of EMR
x4 DQS
x8 DQS
if EMRS(1)[A11] = 0
x8 DQS, RDQS, if EMRS(1)[A11] = 1
Rev. 0.2 / Oct. 2005
9
1HY5PS12421(L)M
HY5PS12821(L)M
2. Functional Description
2.1 Simplified State Diagram
Initialization
Sequence
CKEL
OCD
calibration
Self
Refreshing
SRF
CKEH
PR
Setting
MRS
EMRS
Idle
MRS
REF
All banks
precharged
Refreshing
CKEL
ACT
CKEL
CKEH
Precharge
Power
Down
Activating
CKEL
CKEL
CKEL
Automatic Sequence
Active
Power
Down
Command Sequence
CKEH
CKEL
Bank
Active
Read
Write
Write
Read
WRA
Writing
RDA
Read
Reading
RDA
WRA
RDA
Writing
with
Autoprecharge
PR, PRA
PR, PRA
PR, PRA
Precharging
Reading
with
Autoprecharge
CKEL = CKE low, enter Power Down
CKEH = CKE high, exit Power Down, exit Self Refresh
ACT = Activate
WR(A) = Write (with Autoprecharge)
RD(A) = Read (with Autoprecharge)
PR(A) = Precharge (All)
MRS = (Extended) Mode Register Set
SRF = Enter Self Refresh
REF = Refresh
Note: Use caution with this diagram. It is indented to provide a floorplan of the possible state transitions
and the commands to control them, not all details. In particular situations involving more than one bank,
enabling/disabling on-die termination, Power Down enty/exit - among other things - are not captured
in full detail.
Rev. 0.2 / Oct. 2005
10
1HY5PS12421(L)M
HY5PS12821(L)M
2.2 Functional Block Diagram
2.2.1 Block Diagram(DDP. 256Mx4)
CLK, /RAS, /CAS
/WE, DM
128Mx4
CKE1
/CS1
ODT1
CKE0
/CS0
ODT0
128Mx4
DQ0 ~ DQ3
A0~A13,BA0,BA1
2.2.2 Block Diagram(DDP. 128Mx8)
CLK, /RAS, /CAS
/WE, DM
64Mx8
CKE1
/CS1
ODT1
CKE0
/CS0
ODT0
64Mx8
DQ0 ~ DQ7
A0~A13,BA0,BA1
Rev. 0.2 / Oct. 2005
11
1HY5PS12421(L)M
HY5PS12821(L)M
2.3 Basic Function & Operation of DDR2 SDRAM
Read and write accesses to the DDR2 SDRAM are burst oriented; accesses start at a selected location and
continue for a burst length of four or eight in a programmed sequence. Accesses begin with the registration of
an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the active command are used to select the bank and row to be accessed (BA0-BA2 select the bank;
A0-A15 select the row). The address bits registered coincident with the Read or Write command are used to
select the starting column location for the burst access and to determine if the auto precharge command is to
be issued.
Prior to normal operation, the DDR2 SDRAM must be initialized. The following sections provide detailed information covering device initialization, register definition, command descriptions and device operation.
2.3.1 Power up and Initialization
DDR2 SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other
than those specified may result in undefined operation.
Power-up and Initialization Sequence
The following sequence is required for POWER UP and Initialization.
1. Apply power and attempt to maintain CKE below 0.2*VDDQ and ODT*1 at a low state (all other inputs
may be undefined.)
- VDD, VDDL and VDDQ are driven from a single power converter output, AND
- VTT is limited to 0.95 V max, AND
- Vref tracks VDDQ/2.
or
- Apply VDD before or at the same time as VDDL.
- Apply VDDL before or at the same time as VDDQ.
- Apply VDDQ before or at the same time as VTT & Vref.
at least one of these two sets of conditions must be met.
2. Start clock and maintain stable condition.
3. For the minimum of 200 us after stable power and clock(CK, CK), then apply NOP or deselect & take
CKE high.
4. Wait minimum of 400ns then issue precharge all command. NOP or deselect applied during 400ns
period.
5. Issue EMRS(2) command. (To issue EMRS(2) command, provide “Low” to BA0 and BA2, “High” to
BA1.)*2
6. Issue EMRS(3) command. (To issue EMRS(3) command, provide “Low” to BA2, “High” to BA0 and
BA1.)*2
7. Issue EMRS to enable DLL. (To issue "DLL Enable" command, provide "Low" to A0, "High" to BA0 and
"Low" to BA1-2 and A13~A15.)
8. Issue a Mode Register Set command for “DLL reset”.
(To issue DLL reset command, provide "High" to A8 and "Low" to BA0-2, and A13~15.)
9. Issue precharge all command.
10. Issue 2 or more auto-refresh commands.
11. Issue a mode register set command with low to A8 to initialize device operation. (i.e. to program operating
parameters without resetting the DLL.)
12. At least 200 clocks after step 8, execute OCD Calibration ( Off Chip Driver impedance adjustment ).
Rev. 0.2 / Oct. 2005
12
1HY5PS12421(L)M
HY5PS12821(L)M
1. If OCD calibration is not used, EMRS OCD Default command (A9=A8= A7=1) followed by EMRS OCD
Calibration Mode Exit command (A9=A8=A7=0) must be issued with other operating parameters of
EMRS.
2. The DDR2 SDRAM is now ready for normal operation.
*1) To guarantee ODT off, VREF must be valid and a low level must be applied to the ODT pin.
*2) Sequence 5 and 6 may be performed between 8 and 9.
Initialization Sequence after Power Up
tCH tCL
CK
/CK
tIS
CKE
ODT
Command
PRE
ALL
NOP
400ns
tMRD
tMRD
tRP
DLL
ENABLE
PRE
ALL
MRS
EMRS
DLL
RESET
REF
tRP
MRS
REF
tRFC
tRFC
EMRS
tMRD
ANY
CMD
EMRS
Follow OCD
Flowchart
tOIT
min. 200 Cycle
OCD
Default
OCD
CAL. MODE
EXIT
2.3.2 Programming the Mode and Extended Mode Registers
For application flexibility, burst length, burst type, CAS latency, DLL reset function, write recovery time(tWR)
are user defined variables and must be programmed with a Mode Register Set (MRS) command. Additionally, DLL disable function, driver impedance, additive CAS latency, ODT(On Die Termination), single-ended
strobe, and OCD(off chip driver impedance adjustment) are also user defined variables and must be programmed with an Extended Mode Register Set (EMRS) command. Contents of the Mode Register(MR) or
Extended Mode Registers(EMR(#)) can be altered by re-executing the MRS and EMRS Commands. If the
user chooses to modify only a subset of the MRS or EMRS variables, all variables must be redefined when
the MRS or EMRS commands are issued.
MRS, EMRS and Reset DLL do not affect array contents, which means reinitialization including those can be
executed any time after power-up without affecting array contents.
Rev. 0.2 / Oct. 2005
13
1HY5PS12421(L)M
HY5PS12821(L)M
2.3.2.1 DDR2 SDRAM Mode Register Set (MRS)
The mode register stores the data for controlling the various operating modes of DDR2 SDRAM. It controls
CAS latency, burst length, burst sequence, test mode, DLL reset, tWR and various vendor specific options to
make DDR2 SDRAM useful for various applications. The default value of the mode register is not defined,
therefore the mode register must be written after power-up for proper operation. The mode register is written
by asserting low on CS, RAS, CAS, WE, BA0 and BA1, while controlling the state of address pins A0 ~ A15.
The DDR2 SDRAM should be in all bank precharge with CKE already high prior to writing into the mode register. The mode register set command cycle time (tMRD) is required to complete the write operation to the
mode register. The mode register contents can be changed using the same command and clock cycle
requirements during normal operation as long as all banks are in the precharge state. The mode register is
divided into various fields depending on functionality. Burst length is defined by A0 ~ A2 with options of 4 and
8 bit burst lengths. The burst length decodes are compatible with DDR SDRAM. Burst address sequence type
is defined by A3, CAS latency is defined by A4 ~ A6. The DDR2 doesn’t support half clock latency mode. A7
is used for test mode. A8 is used for DLL reset. A7 must be set to low for normal MRS operation. Write recovery time tWR is defined by A9 ~ A11. Refer to the table for specific codes.
BA1
0*1
0
BA0 A15 ~ A13
0*1
0
A8
A12 A11
PD
No
1
Yes
Active power
down exit time
A9
WR
DLL Reset
0
A12
A10
A8
A7
DLL
TM
A6
A5
CAS Latency
A0
Burst Length
Address Field
Mode Register
Burst Length
Burst Type
0
Normal
0
Sequential
A2
A1
A0
BL
Test
1
Interleave
0
1
0
4
0
1
1
8
1
Write recovery for autoprecharge
A11
A1
A3
A10
A9
WR(cycles)
0
0
0
Reserved
1
Slow exit(use tXARDS)
0
0
1
2
0
1
0
3
MRS mode
BT
A2
mode
Fast exit(use tXARD)
BA0
A3
A7
0
BA1
A4
*2
DDR400
DDR533
DDR667
DDR800
BA2
CAS Latency
A6
A5
A4
Latency
0
0
0
Reserved
0
0
1
Reserved
0
1
0
2(optional)
0
1
1
3
1
0
0
4
0
1
1
4
0
0
MRS
1
0
0
5
0
1
EMRS(1)
1
0
1
6
1
0
1
5
1
0
EMRS(2): Reserved
1
1
0
Reserved
1
1
0
6
1
1
EMRS(3): Reserved
1
1
1
Reserved
1
1
1
Reserved
*1 : BA2 and A13~A15 are reserved for future use and must be programmed to 0 when setting the mode register.
* 2: WR(write recovery for autoprecharge) min is determined by tCK max and WR max is determined by tCK min.
WR in clock cycles is calculated by dividing tWR (in ns) by tCK (in ns) and rounding up to the next integer
(WR[cycles] = tWR(ns)/tCK(ns)). The mode register must be programmed to this value. This is also used with
tRP to determine tDAL.
Rev. 0.2 / Oct. 2005
14
1HY5PS12421(L)M
HY5PS12821(L)M
2.3.2.2 DDR2 SDRAM Extended Mode Register Set
EMRS(1)
The extended mode register(1) stores the data for enabling or disabling the DLL, output driver strength, additive latency,
ODT, DQS disable, OCD program, RDQS enable. The default value of the extended mode register(1) is not defined,
therefore the extended mode register(1) must be written after power-up for proper operation. The extended mode register(1) is written by asserting low on CS, RAS, CAS, WE, high on BA0 and low on BA1, while controlling the states of
address pins A0 ~ A15. The DDR2 SDRAM should be in all bank precharge with CKE already high prior to writing into the
extended mode register(1). The mode register set command cycle time (tMRD) must be satisfied to complete the write
operation to the extended mode register(1). Mode register contents can be changed using the same command and clock
cycle requirements during normal operation as long as all banks are in the precharge state. A0 is used for DLL enable or
disable. A1 is used for enabling a half strength output driver. A3~A5 determines the additive latency, A7~A9 are used for
OCD control, A10 is used for DQS disable and A11 is used for RDQS enable. A2 and A6 are used for ODT setting.
DLL Enable/Disable
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and
upon returning to normal operation after having the DLL disabled. The DLL is automatically disabled when
entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any time
the DLL is enabled (and subsequently reset), 200 clock cycles must occur before a Read command can be
issued to allow time for the internal clock to be synchronized with the external clock. Failing to wait for synchronization to occur may result in a violation of the tAC or tDQSCK parameters.
Rev. 0.2 / Oct. 2005
15
1HY5PS12421(L)M
HY5PS12821(L)M
EMRS(1) Programming
BA2 BA1 BA0 A15 ~ A13
A12
0*1 0
Qoff RDQS DQS
0*1
1
BA1
A11
A10
A9
A8
A6
A5
Rtt
OCD program
MRS mode
BA0
A7
A6
A2
A4
A2
A1
A0
Additive latency
Rtt
D.I.C
DLL
0
MRS
0
0
ODT Disabled
0
1
EMRS(1)
0
1
75 ohm
1
0
EMRS(2): Reserved
1
0
150 ohm
1
1
EMRS(3): Reserved
1
1
Reserved
A8
A7
0
0
0
0
0
0
Extended Mode Register
Rtt (NOMINAL)
0
A9
Address Field
A3
OCD Calibration Program
A0
DLL Enable
0
Enable
1
Disable
A5
A4
A3
OCD Calibration mode exit; maintain setting
0
0
0
0
1
Drive(1)
0
0
1
1
1
0
Drive(0)
0
1
0
2
1
0
0
Adjust modea
0
1
1
3
1
1
1
OCD Calibration default b
1
0
0
4
1
0
1
5
1
1
0
Reserved
1
1
1
Reserved
a: When Adjust mode is issued, AL from previously set value must be applied.
b: After setting to default, OCD mode needs to be exited by setting A9-A7 to
000. Refer to the following 2.2.2.3 section for detailed information
A12
Qoff (Optional)a
Additive Latency
Output Driver
Impedence Control
Driver
Size
0
Output buffer enabled
A1
1
Output buffer disabled
0
Normal
100%
1
Half
60%
a. Outputs disabled - DQs, DQSs, DQSs,
RDQS, RDQS. This feature is used in
conjunction with DIMM IDD meaurements when
IDDQ is not desired to be included.
A10
DQS
0
Enable
1
Disable
A11
RDQS Enable
0
1
Disable
Enable
* If RDQS is enabled, the
DM function is disabled. RDQS
is active for reads and don’t
care for writes.
Strobe Function Matrix
A11
(RDQS Enable)
A10
(DQS Disable)
RDQS/DM
RDQS
DQS
DQS
0 (Disable)
0 (Enable)
DM
Hi-z
DQS
DQS
0 (Disable)
1 (Disable)
DM
Hi-z
DQS
Hi-z
1 (Enable)
0 (Enable)
RDQS
RDQS
DQS
DQS
1 (Enable)
1 (Disable)
RDQS
Hi-z
DQS
Hi-z
*1 : BA2 and A13~A15 are reserved for future use and must be programmed to 0 when setting the mode register.
Rev. 0.2 / Oct. 2005
16
1HY5PS12421(L)M
HY5PS12821(L)M
EMRS(2)
The extended mode register(2) controls refresh related features. The default value of the extended mode register(2) is not defined, therefore the extended mode register(2) must be written after power-up for proper
operation. The extended mode register(2) is written by asserting low on /CS,/RAS,/CAS,/WE, high on BA1
and low on BA0, while controling the states of address pins A0~A15. The DDR2 SDRAM should be in all bank
precharge with CKE already high prior to writing into the extended mode register(2). Mode register contents
can be changed using the same command and clock cycle requirements during normal operation as long as
all bank are in the precharge state.
EMRS(2) Programming:
BA2 BA1 BA0 A15 ~ A13
0*1 1
A12
A11
A10
A9
A8
A7
0*1
0
A6
A5
A4
A1
Address Field
A0
Extended Mode
Register(2)
Hign Temp Self-refresh
Rate Enable
BA1
BA0
0
0
MRS
0
1
EMRS(1)
1
Enable
1
0
EMRS(2)
0
Disable
1
1
EMRS(3):Reserved
A7
A2
0*1
SRF
MRS mode
A3
*1 : The rest bits in EMRS(2) is reserved for future use and all bits except A7, BA0 and BA1 must be
programmed to 0 when setting the mode register during initialization.
Due to the migration natural, user needs to ensure the DRAM part supports higher than 85℃ Tcase temperature self-refresh entry. JEDEC standard DDR2 SDRAM Module user can look at DDR2 SDRAM Module SPD
fileld Byte 49 bit[0]. If the high temperature self-refresh mode is supported then controller can set the EMRS2
[A7] bit to enable the self-refresh rate in case of higher than 85℃ temperature self-refresh operation. For the
lose part user, please refer to the Hynix web site(www.hynix.com) to check the high temperature self-refresh
rate availability.
EMRS(3) Programming: Reserved*1
BA2 BA1 BA0 A15 ~ A13
0*1 1
1
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
0*1
*1 : EMRS(3) is reserved for future use and all bits except BA0 and BA1 must be programmed to 0 when setting
the mode register during initialization.
Rev. 0.2 / Oct. 2005
17
1HY5PS12421(L)M
HY5PS12821(L)M
2.3.2.3 Off-Chip Driver (OCD) Impedance Adjustment
DDR2 SDRAM supports driver calibration feature and the flow chart below is an example of sequence. Every
calibration mode command should be followed by “OCD calibration mode exit” before any other command
being issued. MRS should be set before entering OCD impedance adjustment and ODT (On Die Termiantion) should be carefully controlled depending on system environment.
MRS shoud be set before entering OCD impedance adjustment and ODT should
be carefully controlled depending on system environment
Start
EMRS: OCD calibration mode exit
EMRS: Drive(1)
DQ & DQS High; DQS Low
EMRS: Drive(0)
DQ & DQS Low; DQS High
ALL OK
ALL OK
Test
Test
Need Calibration
Need Calibration
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS :
Enter Adjust Mode
EMRS :
Enter Adjust Mode
BL=4 code input to all DQs
Inc, Dec, or NOP
BL=4 code input to all DQs
Inc, Dec, or NOP
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
End
Rev. 0.2 / Oct. 2005
18
1HY5PS12421(L)M
HY5PS12821(L)M
Extended Mode Register Set for OCD impedance adjustment
OCD impedance adjustment can be done using the following EMRS mode. In drive mode all outputs are
driven out by DDR2 SDRAM and drive of RDQS is depedent on EMRS bit enabling RDQS operation. In
Drive(1) mode, all DQ, DQS (and RDQS) signals are driven high and all DQS signals are driven low. In
drive(0) mode, all DQ, DQS (and RDQS) signals are driven low and all DQS signals are driven high. In
adjust mode, BL = 4 of operation code data must be used. In case of OCD calibration default, output driver
characteristics have a nominal impedance value of 18 ohms during nominal temperature and voltage conditions. Output driver characteristics for OCD calibration default are specified in Table x. OCD applies only
to normal full strength output drive setting defined by EMRS(1) and if half strength is set, OCD default output driver
characteristics are not applicable. When OCD calibration adjust mode is used, OCD default output driver
characteristics are not applicable. After OCD calibration is completed or driver strength is set to default,
subsequent EMRS commands not intended to adjust OCD characteristics must specify A9-A7 as '000' in
order to maintain the default or calibrated value.
Off- Chip-Driver program
A9
A8
A7
Operation
0
0
0
OCD calibration mode exit
0
0
1
Drive(1) DQ, DQS, (RDQS) high and DQS low
0
1
0
Drive(0) DQ, DQS, (RDQS) low and DQS high
1
0
0
Adjust mode
1
1
1
OCD calibration default
OCD impedance adjust
To adjust output driver impedance, controllers must issue the ADJUST EMRS command along with a 4bit
burst code to DDR2 SDRAM as in table X. For this operation, Burst Length has to be set to BL = 4 via MRS
command before activating OCD and controllers must drive this burst code to all DQs at the same time.
DT0 in table X means all DQ bits at bit time 0, DT1 at bit time 1, and so forth. The driver output impedance
is adjusted for all DDR2 SDRAM DQs simultaneously and after OCD calibration, all DQs of a given DDR2
SDRAM will be adjusted to the same driver strength setting. The maximum step count for adjustment is 16
and when the limit is reached, further increment or decrement code has no effect. The default setting may
be any step within the 16 step range. When Adjust mode command is issued, AL from previously set value
must be applied
Table X : Off- Chip-Driver Program
4bit burst code inputs to all DQs
Operation
DT0
DT1
DT2
DT3
0
0
0
0
NOP (No operation)
NOP (No operation)
0
0
0
1
Increase by 1 step
NOP
0
0
1
0
Decrease by 1 step
NOP
0
1
0
0
NOP
Increase by 1 step
1
0
0
0
NOP
Decrease by 1 step
0
1
0
1
Increase by 1 step
Increase by 1 step
0
1
1
0
Decrease by 1 step
Increase by 1 step
1
0
0
1
Increase by 1 step
Decrease by 1 step
Rev. 0.2 / Oct. 2005
Pull-up driver strength
Pull-down driver strength
19
1HY5PS12421(L)M
HY5PS12821(L)M
1
0
1
0
Decrease by 1 step
Decrease by 1 step
Other Combinations
Reserved
For proper operation of adjust mode, WL = RL - 1 = AL + CL - 1 clocks and tDS/tDH should be met as the
following timing diagram. For input data pattern for adjustment, DT0 - DT3 is a fixed order and "not affected
by
MRS addressing mode (ie. sequential or interleave).
OCD adjust mode
CMD
EMRS
OCD calibration mode exit
NOP
NOP
NOP
NOP
NOP
EMRS
NOP
CK
CK
WL
WR
DQS
DQS_in
tDS
DQ_in
tDH
DT0
DT1
DT2
DT3
DM
Drive Mode
Drive mode, both Drive(1) and Drive(0), is used for controllers to measure DDR2 SDRAM Driver
impedance. In this mode, all outputs are driven out tOIT after “enter drive mode” command and all output
drivers are turned-off tOIT after “OCD calibration mode exit” command as the following timing diagram.
OCD calibration mode exit
Enter Drive mode
CMD
EMRS
NOP
NOP
NOP
EMRS
CK
CK
DQS
DQS
Hi-Z
Hi-Z
DQS high & DQS low for Drive(1), DQS low & DQS high for Drive(0)
DQs high for Drive(1)
DQ
DQs low for Drive(0)
tOIT
Rev. 0.2 / Oct. 2005
tOIT
20
1HY5PS12421(L)M
HY5PS12821(L)M
2.3.2.4 ODT (On Die Termination)
On Die Termination (ODT) is a feature that allows a DRAM to turn on/off termination resistance for each DQ,
DQS/DQS, RDQS/RDQS, and DM signal for x4x8 configurations via the ODT control pin. For x16 configuration ODT is applied to each DQ, UDQS/UDQS, LDQS/LDQS, UDM, and LDM signal via the ODT control pin.
The ODT feature is designed to improve signal integrity of the memory channel by allowing the DRAM controller to independently turn on/off termination resistance for any or all DRAM devices.
The ODT function is supported for ACTIVE and STANDBY modes. ODT is turned off and not supported in
SELF REFRESH mode.
FUNCTIONAL REPRESENTATION OF ODT
VDDQ
sw1
Rval1
VDDQ
sw2
Rval2
DRAM
Input
Buffer
Input
Pin
Rval1
sw1
VSSQ
Rval2
sw2
VSSQ
Switch sw1 or sw2 is enabled by ODT pin.
Selection between sw1 or sw2 is determined by “Rtt (nominal)” in EMRS
Termination included on all DQs, DM, DQS, DQS, RDQS, and RDQS pins.
Target Rtt (ohm) = (Rval1) / 2 or (Rval2) / 2
Rev. 0.2 / Oct. 2005
21
1HY5PS12421(L)M
HY5PS12821(L)M
ODT timing for active/standby mode
T0
T1
T2
T3
T4
T5
T6
CK
CK
CKE
tIS
tIS
ODT
tAOFD
tAOND
Internal
Term Res.
RTT
tAOF,min
tAON,max
tAON,min
tAOF,max
ODT timing for powerdown mode
T0
T1
T2
T3
T4
T5
T6
CK
CK
CKE
tIS
tIS
ODT
tAOFPD,max
tAOFPD,min
Internal
Term Res.
RTT
tAONPD,min
tAONPD,max
Rev. 0.2 / Oct. 2005
22
1HY5PS12421(L)M
HY5PS12821(L)M
ODT timing mode switch at entering power down mode
T-5
T-4
T-3
T-2
CK
CK
T-1
T0
T2
T1
T3
T4
tANPD
tIS
CKE
Entering Slow Exit Active Power Down Mode
or Precharge Power Down Mode.
tIS
ODT
Active & Standby
mode timings to
be applied.
tAOFD
Internal
Term Res.
RTT
tIS
ODT
Power Down
mode timings to
be applied.
tAOFPDmax
Internal
Term Res.
RTT
tIS
ODT
tAOND
Internal
Term Res.
RTT
Active & Standby
mode timings to
be applied.
tIS
ODT
tAONPDmax
Internal
Term Res.
Rev. 0.2 / Oct. 2005
RTT
Power Down
mode timings to
be applied.
23
1HY5PS12421(L)M
HY5PS12821(L)M
ODT timing mode switch at exiting power down mode
T0
T1
T4
T5
T6
T7
T8
T9
T10
T11
CK
CK
tIS
tAXPD
CKE
Exiting from Slow Active Power Down Mode
or Precharge Power Down Mode.
tIS
Active & Standby
mode timings to
be applied.
ODT
tAOFD
Internal
Term Res.
RTT
tIS
Power Down
mode timings to
be applied.
ODT
tAOFPDmax
Internal
Term Res.
RTT
tIS
Active & Standby
mode timings to
be applied.
ODT
tAOND
Internal
Term Res.
RTT
tIS
Power Down
mode timings to
be applied.
ODT
tAONPDmax
Internal
Term Res.
Rev. 0.2 / Oct. 2005
RTT
24
1HY5PS12421(L)M
HY5PS12821(L)M
2.4 Bank Activate Command
The Bank Activate command is issued by holding CAS and WE high with CS and RAS low at the rising edge
of the clock. The bank addresses BA0 ~ BA2 are used to select the desired bank. The row address A0
through A15 is used to determine which row to activate in the selected bank. The Bank Activate command
must be applied before any Read or Write operation can be executed. Immediately after the bank active
command, the DDR2 SDRAM can accept a read or write command on the following clock cycle. If a R/W
command is issued to a bank that has not satisfied the tRCDmin specification, then additive latency must be
programmed into the device to delay when the R/W command is internally issued to the device. The additive
latency value must be chosen to assure tRCDmin is satisfied. Additive latencies of 0, 1, 2, 3 and 4 are supported. Once a bank has been activated it must be precharged before another Bank Activate command can
be applied to the same bank. The bank active and precharge times are defined as tRAS and tRP, respectively. The minimum time interval between successive Bank Activate commands to the same bank is determined by the RAS cycle time of the device (tRC). The minimum time interval between Bank Activate
commands is tRRD.
Bank Activate Command Cycle: tRCD = 3, AL = 2, tRP = 3, tRRD = 2, tCCD = 2
T0
T1
T2
T3
Tn
Tn+1
Tn+2
Tn+3
..........
CK / CK
Internal RAS-CAS delay (>= tRCDmin)
ADDRESS
Bank B
Bank A
Bank B
Col. Addr.
Col. Addr.
Row Addr.
CAS-CAS delay time (tCCD)
tRCD =1
additive latency delay (AL)
Bank A
Row Addr.
A
. . . . . . . . .Bank
.
Addr.
Bank B
Addr.
Bank A
Row Addr.
Bank B
Precharge
Bank A
Activate
Read Begins
RAS - RAS delay time (>= tRRD)
COMMAND
Bank A
Activate
: “H” or “L”
Bank A
Post CAS
Read
Bank B
Activate
Bank B
Post CAS
Read
A
. . . . . . . . Bank
..
Precharge
Bank Active (>= tRAS)
Bank Precharge time (>= tRP)
RAS Cycle time (>= tRC)
Rev. 0.2 / Oct. 2005
25
1HY5PS12421(L)M
HY5PS12821(L)M
2.5 Read and Write Access Modes
After a bank has been activated, a read or write cycle can be executed. This is accomplished by setting RAS
high, CS and CAS low at the clock’s rising edge. WE must also be defined at this time to determine whether
the access cycle is a read operation (WE high) or a write operation (WE low).
The DDR2 SDRAM provides a fast column access operation. A single Read or Write Command will initiate a
serial read or write operation on successive clock cycles. The boundary of the burst cycle is strictly restricted
to specific segments of the page length. For example, the 32Mbit x 4 I/O x 4 Bank chip has a page length of
2048 bits (defined by CA0-CA9, CA11). The page length of 2048 is divided into 512 or 256 uniquely addressable boundary segments depending on burst length, 512 for 4 bit burst, 256 for 8 bit burst respectively. A 4bit or 8 bit burst operation will occur entirely within one of the 512 or 256 groups beginning with the column
address supplied to the device during the Read or Write Command (CA0-CA9, CA11). The second, third and
fourth access will also occur within this group segment, however, the burst order is a function of the starting
address, and the burst sequence.
A new burst access must not interrupt the previous 4 bit burst operation in case of BL = 4 setting. However,
in case of BL = 8 setting, two cases of interrupt by a new burst access are allowed, one reads interrupted by
a read, the other writes interrupted by a write with 4 bit burst boundry respectively. The minimum CAS to
CAS delay is defined by tCCD, and is a minimum of 2 clocks for read or write cycles.
Rev. 0.2 / Oct. 2005
26
1HY5PS12421(L)M
HY5PS12821(L)M
2.5.1 Posted CAS
Posted CAS operation is supported to make command and data bus efficient for sustainable bandwidths in DDR2
SDRAM. In this operation, the DDR2 SDRAM allows a CAS read or write command to be issued immediately after the
RAS bank activate command (or any time during the RAS-CAS-delay time, tRCD, period). The command is held for the
time of the Additive Latency (AL) before it is issued inside the device. The Read Latency (RL) is controlled by the sum of
AL and the CAS latency (CL). Therefore if a user chooses to issue a R/W command before the tRCDmin, then AL (greater
than 0) must be written into the EMRS(1). The Write Latency (WL) is always defined as RL - 1 (read latency -1) where
read latency is defined as the sum of additive latency plus CAS latency (RL=AL+CL). Read or Write operations using AL
allow seamless bursts (refer to semaless operation timing diagram examples in Read burst and Wirte burst section)
Examples of posted CAS operation
Example 1
Read followed by a write to the same bank
[AL = 2 and CL = 3, RL = (AL + CL) = 5, WL = (RL - 1) = 4, BL = 4]
-1
0
1
2
3
4
5
6
7
8
9
10
11
12
11
12
CK/CK
Active
A-Bank
CMD
Write
A-Bank
Read
A-Bank
DQS/DQS
> = tRCD
DQ
WL = RL -1 = 4
CL = 3
AL = 2
RL = AL + CL = 5
Dout0
Dout1
Dout2
Dout3
Din0
Din1
Din2
Din3
> = tRAC
Example 2 Read followed by a write to the same bank
[AL = 0 and CL = 3, RL = (AL + CL) = 3, WL = (RL - 1) = 2, BL = 4]
-1
0
1
2
3
4
5
6
7
8
9
10
CK/CK
AL = 0
CMD
DQS/DQS
DQ
Rev. 0.2 / Oct. 2005
Active
A-Bank
Write
A-Bank
Read
A-Bank
WL = RL -1 = 2
CL = 3
> = tRCD
RL = AL + CL = 3
Dout0
Dout1
Dout2
Dout3
Din0
Din1
Din2
Din3
> = tRAC
27
1HY5PS12421(L)M
HY5PS12821(L)M
2.5.2 Burst Mode Operation
Burst mode operation is used to provide a constant flow of data to memory locations (write cycle), or from
memory locations (read cycle). The parameters that define how the burst mode will operate are burst
sequence and burst length. DDR2 SDRAM supports 4 bit burst and 8 bit burst modes only. For 8 bit burst
mode, full interleave address ordering is supported, however, sequential address ordering is nibble based for
ease of implementation. The burst type, either sequential or interleaved, is programmable and defined by the
address bit 3 (A3) of the MRS, which is similar to the DDR SDRAM operation. Seamless burst read or write
operations are supported. Unlike DDR devices, interruption of a burst read or write cycle during BL = 4 mode
operation is prohibited. However in case of BL = 8 mode, interruption of a burst read or write operation is limited to two cases, reads interrupted by a read, or writes interrupted by a write. Therefore the Burst Stop command is not supported on DDR2 SDRAM devices.
Burst Length and Sequence
Burst Length
Starting Address (A2 A1 A0)
Sequential Addressing (decimal)
Interleave Addressing (decimal)
000
0, 1, 2, 3
0, 1, 2, 3
001
1, 2, 3, 0
1, 0, 3, 2
010
2, 3, 0, 1
2, 3, 0, 1
011
3, 0, 1, 2
3, 2, 1, 0
000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 0, 5, 6, 7, 4
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 0, 1, 6, 7, 4, 5
2, 3, 0, 1, 6, 7, 4, 5
011
3, 0, 1, 2, 7, 4, 5, 6
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 4, 1, 2, 3, 0
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 4, 5, 2, 3, 0, 1
6, 7, 4, 5, 2, 3, 0, 1
111
7, 4, 5, 6, 3, 0, 1, 2
7, 6, 5, 4, 3, 2, 1, 0
4
8
Note: Page length is a function of I/O organization and column addressing
Rev. 0.2 / Oct. 2005
28
1HY5PS12421(L)M
HY5PS12821(L)M
2.5.3 Burst Read Command
The Burst Read command is initiated by having CS and CAS low while holding RAS and WE high at the
rising edge of the clock. The address inputs determine the starting column address for the burst. The delay
from the start of the command to when the data from the first cell appears on the outputs is equal to the
value of the read latency (RL). The data strobe output (DQS) is driven low 1 clock cycle before valid data
(DQ) is driven onto the data bus. The first bit of the burst is synchronized with the rising edge of the data
strobe (DQS). Each subsequent data-out appears on the DQ pin in phase with the DQS signal in a source
synchronous manner. The RL is equal to an additive latency (AL) plus CAS latency (CL). The CL is defined
by the Mode Register Set (MRS), similar to the existing SDR and DDR SDRAMs. The AL is defined by the
Extended Mode Register Set (1)(EMRS(1)).
DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on
the setting of the EMRS(1) “Enable DQS” mode bit; timing advantages of differential mode are realized in
system design. The method by which the DDR2 SDRAM pin timings are measured is mode dependent. In
single
ended mode, timing relationships are measured relative to the rising or falling edges of DQS crossing at
VREF. In differential mode, these timing relationships are measured relative to the crosspoint of DQS and
its complement, DQS. This distinction in timing methods is guaranteed by design and characterization.
Note that when differential data strobe mode is disabled via the EMRS, the complementary pin, DQS, must
be tied externally to VSS through a 20 ohm to 10 Kohm resistor to insure proper operation.
tCH
tCL
CK
CK
CK
DQS
DQS/DQS
DQS
tRPRE
tRPST
DQ
Q
Q
Q
tDQSQmax
Q
tDQSQmax
tQH
tQH
Figure YY-- Data output (read) timing
Burst Read Operation: RL = 5 (AL = 2, CL = 3, BL = 4)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK/CK
CMD
Posted CAS
READ A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
=< tDQSCK
DQS/DQS
AL = 2
CL =3
RL = 5
DQs
Rev. 0.2 / Oct. 2005
DOUT A0
DOUT A1
DOUT A2
DOUT A3
29
1HY5PS12421(L)M
HY5PS12821(L)M
Burst Read Operation: RL = 3 (AL = 0 and CL = 3, BL = 8)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK/CK
READ A
CMD
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
=< tDQSCK
DQS/DQS
CL =3
RL = 3
DQs
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A4
DOUT A5
DOUT A6
DOUT A7
Burst Read followed by Burst Write: RL = 5, WL = (RL-1) = 4, BL = 4
T0
T1
Tn-1
Tn
Tn+1
Tn+2
Tn+3
Tn+4
Tn+5
NOP
NOP
NOP
NOP
CK/CK
CMD
Post CAS
READ A
NOP
Post CAS
NOP
WRITE A
tRTW (Read to Write turn around time)
NOP
DQS/DQS
RL =5
WL = RL - 1 = 4
DQ’s
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DIN A0
DIN A1
DIN A2
DIN A3
The minimum time from the burst read command to the burst write command is defined by a read-to-writeturn-around-time, which is 4 clocks in case of BL = 4 operation, 6 clocks in case of BL = 8 operation.
Rev. 0.2 / Oct. 2005
30
1HY5PS12421(L)M
HY5PS12821(L)M
Seamless Burst Read Operation: RL = 5, AL = 2, and CL = 3, BL = 4
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK/CK
CMD
Post CAS
READ A
NOP
Post CAS
READ B
NOP
NOP
NOP
NOP
NOP
NOP
DQS/DQS
CL =3
AL = 2
RL = 5
DQs
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT B0
DOUT B1
DOUT B2
The seamless burst read operation is supported by enabling a read command at every other clock for BL = 4
operation, and every 4 clock for BL = 8 operation. This operation is allowed regardless of same or different
banks as long as the banks are activated.
Rev. 0.2 / Oct. 2005
31
1HY5PS12421(L)M
HY5PS12821(L)M
Reads interrupted by a read
Burst read can only be interrupted by another read with 4 bit burst boundary. Any other case of read interrupt is not allowed.
Read Burst Interrupt Timing Example: (CL=3, AL=0, RL=3, BL=8)
CK/CK
CMD
Read A
NOP
Read B
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS/DQS
DQs
A0
A1
A2
A3
B0
B1
B2
B3
B4
B5
B6
B7
Note
1. Read burst interrupt function is only allowed on burst of 8. Burst interrupt of 4 is prohibited.
2. Read burst of 8 can only be interrupted by another Read command. Read burst interruption by Write
command or Precharge command is prohibited.
3. Read burst interrupt must occur exactly two clocks after previous Read command. Any other Read
burst interrupt timings are prohibited.
4. Read burst interruption is allowed to any bank inside DRAM.
5. Read burst with Auto Precharge enabled is not allowed to interrupt.
6. Read burst interruption is allowed by another Read with Auto Precharge command.
7. All command timings are referenced to burst length set in the mode register. They are not referenced
to actual burst. For example, Minimum Read to Precharge timing is AL + BL/2 where BL is the burst
length set in the mode register and not the actual burst (which is shorter because of interrupt).
Rev. 0.2 / Oct. 2005
32
1HY5PS12421(L)M
HY5PS12821(L)M
2.5.4 Burst Write Operation
The Burst Write command is initiated by having CS, CAS and WE low while holding RAS high at the rising
edge of the clock. The address inputs determine the starting column address. Write latency (WL) is defined
by a read latency (RL) minus one and is equal to (AL + CL -1). A data strobe signal (DQS) should be driven
low (preamble) one clock prior to the WL. The first data bit of the burst cycle must be applied to the DQ pins
at the first rising edge of the DQS following the preamble. The tDQSS specification must be satisfied for write
cycles. The subsequent burst bit data are issued on successive edges of the DQS until the burst length is
completed, which is 4 or 8 bit burst. When the burst has finished, any additional data supplied to the DQ pins
will be ignored. The DQ Signal is ignored after the burst write operation is complete. The time from the completion of the burst write to bank precharge is the write recovery time (WR).
DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the
setting of the EMRS “Enable DQS” mode bit; timing advantages of differential mode are realized in system
design. The method by which the DDR2 SDRAM pin timings are measured is mode dependent. In single
ended mode, timing relationships are measured relative to the rising or falling edges of DQS crossing at VREF.
In differential mode, these timing relationships are measured relative to the crosspoint of DQS and its complement, DQS. This distinction in timing methods is guaranteed by design and characterization. Note that
when differential data strobe mode is disabled via the EMRS, the complementary pin, DQS, must be tied
externally to VSS through a 20 ohm to 10 Kohm resistor to insure proper operation.
tDQSH
DQS
DQS/
DQS
tDQSL
DQS
tWPRE
tWPST
DQ
D
D
tDS
DM
tDH
tDS
DMin
D
D
DMin
DMin
tDH
DMin
Data input (write) timing
Burst Write Operation: RL = 5, WL = 4, tWR = 3 (AL=2, CL=3), BL = 4
T0
T1
T2
T3
T4
T5
T6
T7
Tn
CK/CK
CMD
Posted CAS
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Precharge
Completion of
the Burst Write
< = tDQSS
DQS/DQS
WL = RL - 1 = 4
DQs
Rev. 0.2 / Oct. 2005
> = WR
DIN A0
DIN A1
DIN A2
DIN A3
33
1HY5PS12421(L)M
HY5PS12821(L)M
Burst Write Operation: RL = 3, WL = 2, tWR = 2 (AL=0, CL=3), BL = 4
T0
T1
T2
T3
T4
T5
T6
T7
Tn
CK/CK
NOP
WRITE A
CMD
NOP
NOP
NOP
NOP
Precharge
NOP
Bank A
Activate
Completion of
the Burst Write
< = tDQSS
DQS/
DQS
WL = RL - 1 = 2
> = tRP
> = WR
DQs
DIN A0
DIN A1
DIN A2
DIN A3
Burst Write followed by Burst Read: RL = 5 (AL=2, CL=3), WL = 4, tWTR = 2, BL = 4
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
CK/CK
Write to Read = CL - 1 + BL/2 + tWTR
CMD
NOP
NOP
NOP
Post CAS
READ A
NOP
NOP
NOP
NOP
NOP
DQS
DQS/
DQS
DQS
CL = 3
AL = 2
WL = RL - 1 = 4
RL =5
> = tWTR
DQ
DIN A0
DIN A1
DIN A2
DOUT A0
DIN A3
The minimum number of clock from the burst write command to the burst read command is [CL - 1 + BL/2 +
tWTR]. This tWTR is not a write recovery time (tWR) but the time required to transfer the 4bit write data from
the input buffer into sense amplifiers in the array. tWTR is defined in AC spec table of this data sheet.
Rev. 0.2 / Oct. 2005
34
1HY5PS12421(L)M
HY5PS12821(L)M
Seamless Burst Write Operation: RL = 5, WL = 4, BL = 4
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK/CK
CMD
Post CAS
Write A
NOP
Post CAS
Write B
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQS/
DQS
DQS
WL = RL - 1 = 4
DQ’s
DIN A0
DIN A1
DIN A2
DIN A3
DIN B0
DIN B1
DIN B2
DIN B3
The seamless burst write operation is supported by enabling a write command every other clock for BL = 4
operation, every four clocks for BL = 8 operation. This operation is allowed regardless of same or different
banks as long as the banks are activated
Rev. 0.2 / Oct. 2005
35
1HY5PS12421(L)M
HY5PS12821(L)M
Writes interrupted by a write
Burst write can only be interrupted by another write with 4 bit burst boundary. Any other case of write interrupt is not allowed.
Write Burst Interrupt Timing Example: (CL=3, AL=0, RL=3, WL=2, BL=8)
CK/CK
CMD
NOP
Write A
NOP
NOP
Write B
NOP
NOP
NOP
NOP
NOP
DQS/DQS
DQs
A0
A1
A2
A3
B0
B1
B2
B3
B4
B5
B6
B7
Notes:
1. Write burst interrupt function is only allowed on burst of 8. Burst interrupt of 4 is prohibited.
2. Write burst of 8 can only be interrupted by another Write command. Write burst interruption by Read
command or Precharge command is prohibited.
3. Write burst interrupt must occur exactly two clocks after previous Write command. Any other Write
burst interrupt timings are prohibited.
4. Write burst interruption is allowed to any bank inside DRAM.
5. Write burst with Auto Precharge enabled is not allowed to interrupt.
6. Write burst interruption is allowed by another Write with Auto Precharge command.
7. All command timings are referenced to burst length set in the mode register. They are not referenced
to actual burst. For example, minimum Write to Precharge timing is WL+BL/2+tWR where tWR starts
with the rising clock after the un-interrupted burst end and not from the end of actual burst end.
Rev. 0.2 / Oct. 2005
36
1HY5PS12421(L)M
HY5PS12821(L)M
2.5.5 Write data mask
One write data mask (DM) pin for each 8 data bits (DQ) will be supported on DDR2 SDRAMs, Consistent
with the implementation on DDR SDRAMs. It has identical timings on write operations as the data bits, and
though used in a uni-directional manner, is internally loaded identically to data bits to insure matched system timing. DM of x4 and x16 bit organization is not used during read cycles. However DM of x8 bit organization can be used as RDQS during read cycles by EMRS(1) settng.
Data Mask Timing
DQS/
DQS
DQ
DM
tDS tDH
tDS tDH
Data Mask Function, WL=3, AL=0, BL = 4 shown
Case 1 : min tDQSS
CK
CK
COMMAND
Write
tDQSS
tWR
DQS/DQS
DQ
DM
Case 2 : max tDQSS
tDQSS
DQS/DQS
DQ
DM
Rev. 0.2 / Oct. 2005
37
1HY5PS12421(L)M
HY5PS12821(L)M
2.6 Precharge Operation
The Precharge Command is used to precharge or close a bank that has been activated. The Precharge Command is triggered when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The Precharge Command can be used to precharge each bank independently or all banks simultaneously. Three
address bits A10, BA0 and BA1 for 512Mb are used to define which bank to precharge when the command is
issued.
Bank Selection for Precharge by Address Bits
A10
BA1
BA0
Precharged Bank(s)
LOW
LOW
LOW
Bank 0 only
LOW
LOW
HIGH
Bank 1 only
LOW
HIGH
LOW
Bank 2 only
LOW
HIGH
HIGH
Bank 3 only
HIGH
DON’T CARE
DON’T CARE
All Banks
Remarks
Burst Read Operation Followed by Precharge
Minium Read to precharge command spacing to the same bank = AL + BL/2 clocks
For the earliest possible precharge, the precharge command may be issued on the rising edge which is
“Additive latency(AL) + BL/2 clocks” after a Read command. A new bank active (command) may be issued to
the same bank after the RAS precharge time (tRP). A precharge command cannot be issued until tRAS is satisfied.
The minimum Read to Precharge spacing has also to satisfy a minimum analog time from the rising clock
egde that initiates the last 4-bit prefetch of a Read to Precharge command. This time is called tRTP (Read to
Precharge). For BL = 4 this is the time from the actual read (AL after the Read command) to Precharge command. For BL = 8 this is the time from AL + 2 clocks after the Read to the Precharge command.
Rev. 0.2 / Oct. 2005
38
1HY5PS12421(L)M
HY5PS12821(L)M
Example 1: Burst Read Operation Followed by Precharge:
RL = 4, AL = 1, CL = 3, BL = 4, tRTP <= 2 clocks
T0
T1
T2
T3
T4
T5
T6
T7
T8
NOP
Bank A
Active
NOP
T6
T7
T8
NOP
NOP
NOP
CK/CK
CMD
Post CAS
READ A
NOP
NOP
Precharge
NOP
NOP
AL + BL/2 clks
DQS/DQS
> = tRP
CL = 3
AL = 1
RL =4
DQ’s
DOUT A0
> = tRAS
DOUT A1
DOUT A2
DOUT A3
CL =3
> = tRTP
Example 2: Burst Read Operation Followed by Precharge:
RL = 4, AL = 1, CL = 3, BL = 8, tRTP <= 2 clocks
T0
T1
T2
T3
T4
T5
CK/CK
CMD
Post CAS
READ A
NOP
NOP
NOP
NOP
Precharge A
AL + BL/2 clks
DQS/DQS
CL = 3
AL = 1
RL =4
DQ’s
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A4
DOUT A5
DOUT A6
DOUT A7
> = tRTP
first 4-bit prefetch
Rev. 0.2 / Oct. 2005
second 4-bit prefetch
39
1HY5PS12421(L)M
HY5PS12821(L)M
Example 3: Burst Read Operation Followed by Precharge:
RL = 5, AL = 2, CL = 3, BL = 4, tRTP <= 2 clocks
T0
T1
T2
T3
T4
T5
T6
T7
T8
Bank A
Activate
NOP
CK/CK
CMD
Posted CAS
READ A
NOP
NOP
NOP
Precharge A
NOP
NOP
AL + BL/2 clks
DQS/DQS
> = tRP
AL = 2
CL =3
RL =5
DQ’s
DOUT A0
> = tRAS
DOUT A1
DOUT A2
DOUT A3
CL =3
> = tRTP
Example 4: Burst Read Operation Followed by Precharge:
RL = 6, AL = 2, CL = 4, BL = 4, tRTP <= 2 clocks
T0
T1
T2
T3
T4
T5
T6
T7
T8
Bank A
Activate
NOP
CK/CK
CMD
Post CAS
READ A
NOP
NOP
NOP
Precharge A
NOP
NOP
AL + BL/2 Clks
DQS/DQS
> = tRP
AL = 2
CL =4
RL = 6
DQ’s
DOUT A0
> = tRAS
DOUT A1
DOUT A2
DOUT A3
CL =4
> = tRTP
Rev. 0.2 / Oct. 2005
40
1HY5PS12421(L)M
HY5PS12821(L)M
Example 5: Burst Read Operation Followed by Precharge:
RL = 4, AL = 0, CL = 4, BL = 8, tRTP > 2 clocks
T0
T1
T2
T3
T4
T5
T6
T7
T8
NOP
Bank A
Activate
CK/CK
CMD
Post CAS
READ A
NOP
NOP
NOP
NOP
NOP
Precharge A
AL + 2 Clks + max{tRTP;2 tCK}*
DQS/DQS
AL = 0
> = tRP
CL =4
RL = 4
DQ’s
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A4
DOUT A5
DOUT A6
DOUT A7
> = tRAS
> = tRTP
first 4-bit prefetch
second 4-bit prefetch
* : rounded to next interger
Rev. 0.2 / Oct. 2005
41
1HY5PS12421(L)M
HY5PS12821(L)M
Burst Write followed by Precharge
Minium Write to Precharge Command spacing to the same bank = WL + BL/2 clks + tWR
For write cycles, a delay must be satisfied from the completion of the last burst write cycle until the Precharge
Command can be issued. This delay is known as a write recovery time (tWR) referenced from the completion
of the burst write to the precharge command. No Precharge command should be issued prior to the tWR delay.
Example 1: Burst Write followed by Precharge: WL = (RL-1) =3
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK/CK
CMD
Posted CAS
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Precharge A
Completion of the Burst Write
> = WR
DQS/DQS
WL = 3
DQs
DIN A0
DIN A1
DIN A2
DIN A3
Example 2: Burst Write followed by Precharge: WL = (RL-1) = 4
T0
T1
T2
T3
T4
T5
T6
T7
T9
CK/CK
CMD
Posted CAS
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Precharge A
Completion of the Burst Write
> = tWR
DQS/DQS
WL = 4
DQs
Rev. 0.2 / Oct. 2005
DIN A0
DIN A1
DIN A2
DIN A3
42
1HY5PS12421(L)M
HY5PS12821(L)M
2.7 Auto Precharge Operation
Before a new row in an active bank can be opened, the active bank must be precharged using either the
Precharge command or the auto-precharge function. When a Read or a Write command is given to the
DDR2 SDRAM, the CAS timing accepts one extra address, column address A10, to allow the active bank
to automatically begin precharge at the earliest possible moment during the burst read or write cycle. If
A10 is low when the READ or WRITE command is issued, then normal Read or Write burst operation is
executed and the bank remains active at the completion of the burst sequence. If A10 is high when the
Read or Write command is issued, then the auto-precharge function is engaged. During auto-precharge, a
Read command will execute as normal with the exception that the active bank will begin to precharge on
the rising edge which is CAS latency (CL) clock cycles before the end of the read burst.
Auto-precharge is also implemented during Write commands. The precharge operation engaged by the
Auto precharge command will not begin until the last data of the burst write sequence is properly stored in
the memory array.
This feature allows the precharge operation to be partially or completely hidden during burst read cycles
(dependent upon CAS latency) thus improving system performance for random data access. The RAS
lockout circuit internally delays the Precharge operation until the array restore operation has been completed (tRAS satisfied) so that the auto precharge command may be issued with any read or write command.
Burst Read with Auto Precharge
If A10 is high when a Read Command is issued, the Read with Auto-Precharge function is engaged. The
DDR2 SDRAM starts an Auto Precharge operation on the rising edge which is (AL + BL/2) cycles later than
the read with AP command if tRAS(min) and tRTP are satisfied.
If tRAS(min) is not satisfied at the edge, the start point of auto-precharge operation will be delayed until
tRAS(min) is satisfied.
If tRTP(min) is not satisfied at the edge, the start point of auto-precharge operation will be delayed until
tRTP(min) is satisfied.
In case the internal precharge is pushed out by tRTP, tRP starts at the point where the internal precharge
happens (not at the next rising clock edge after this event). So for BL = 4 the minimum time from Read_AP
to the next Activate command becomes AL + (tRTP + tRP)* (see example 2) for BL = 8 the time from
Read_AP to the next Activate is AL + 2 + (tRTP + tRP)*, where “*” means: “rounded up to the next integer”.
In any event internal precharge does not start earlier than two clocks after the last 4-bit prefetch.
A new bank activate (command) may be issued to the same bank if the following two conditions are satisfied simultaneously.
(1) The RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins.
(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.
Rev. 0.2 / Oct. 2005
43
1HY5PS12421(L)M
HY5PS12821(L)M
Example 1: Burst Read Operation with Auto Precharge:
RL = 4, AL = 1, CL = 3, BL = 8, tRTP <= 2 clocks
T0
T1
T2
T3
T4
T5
T6
T7
NOP
NOP
NOP
T8
CK/CK
Post CAS
CMD
READ A
NOP
NOP
NOP
NOP
Bank A
Activate
Autoprecharge
AL + BL/2 clks
> = tRP
DQS/DQS
CL = 3
AL = 1
RL =4
DQ’s
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A4
DOUT A5
DOUT A6
DOUT A7
> = tRTP
second 4-bit prefetch
first 4-bit prefetch
tRTP
Precharge begins here
Example 2: Burst Read Operation with Auto Precharge:
RL = 4, AL = 1, CL = 3, BL = 4, tRTP > 2 clocks
T0
T1
T2
T3
T4
T5
T6
T7
T8
NOP
NOP
Bank A
Activate
NOP
CK/CK
CMD
Post CAS
READ A
NOP
NOP
NOP
NOP
Autoprecharge
> = AL + tRTP + tRP
DQS/DQS
CL = 3
AL = 1
RL =4
DQ’s
DOUT A0
DOUT A1
DOUT A2
DOUT A3
4-bit prefetch
tRTP
Rev. 0.2 / Oct. 2005
Precharge begins here
tRP
44
1HY5PS12421(L)M
HY5PS12821(L)M
Example 3: Burst Read with Auto Precharge Followed by an activation to the Same
Bank(tRC Limit):
RL = 5 (AL = 2, CL = 3, internal tRCD = 3, BL = 4, tRTP <= 2 clocks)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK/CK
A10 = 1
CMD
Post CAS
READ A
NOP
NOP
NOP
> = tRAS(min)
NOP
NOP
NOP
NOP
Bank A
Activate
Auto Precharge Begins
DQS/DQS
> = tRP
AL = 2
CL =3
RL = 5
DQ’s
DOUT A0
DOUT A1
DOUT A2
DOUT A3
CL =3
> = tRC
Example 4: Burst Read with Auto Precharge Followed by an Activation to the Same
Bank(tRP Limit):
RL = 5 (AL = 2, CL = 3, internal tRCD = 3, BL = 4, tRTP <= 2 clocks)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK/CK
A10 = 1
CMD
Post CAS
READ A
NOP
NOP
NOP
> = tRAS(min)
NOP
NOP
Bank A
Activate
NOP
NOP
Auto Precharge Begins
DQS/DQS
> = tRP
AL = 2
CL =3
RL = 5
DQ’s
DOUT A0
> = tRC
Rev. 0.2 / Oct. 2005
DOUT A1
DOUT A2
DOUT A3
CL =3
45
1HY5PS12421(L)M
HY5PS12821(L)M
Burst Write with Auto-Precharge
If A10 is high when a Write Command is issued, the Write with Auto-Precharge function is engaged. The
DDR2 SDRAM automatically begins precharge operation after the completion of the burst write plus write
recovery time (tWR). The bank undergoing auto-precharge from the completion of the write burst may be
reactivated if the following two conditions are satisfied.
(1) The data-in to bank activate delay time (WR + tRP) has been satisfied.
(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.
Burst Write with Auto-Precharge (tRC Limit): WL = 2, tWR =2, BL = 4, tRP=3
T0
T1
T2
T3
T4
T5
T6
T7
Tm
CK/CK
A10 = 1
CMD
Post CAS
WRA BankA
NOP
NOP
NOP
NOP
NOP
Completion of the Burst Write
NOP
NOP
Bank A
Active
Auto Precharge Begins
DQS/DQS
DQs
> = tRP
> = WR
WL =RL - 1 = 2
DIN A0
DIN A1
DIN A2
DIN A3
> = tRC
Burst Write with Auto-Precharge (tWR + tRP): WL = 4, tWR =2, BL = 4, tRP=3
T0
T3
T4
T5
T6
T7
T8
T9
T12
CK/CK
A10 = 1
Post CAS
CMD WRA
Bank A
NOP
NOP
NOP
NOP
NOP
Completion of the Burst Write
NOP
NOP
Bank A
Active
Auto Precharge Begins
DQS/DQS
> = WR
WL =RL - 1 = 4
DQs
DIN A0
DIN A1
DIN A2
> = tRP
DIN A3
> = tRC
Rev. 0.2 / Oct. 2005
46
1HY5PS12421(L)M
HY5PS12821(L)M
2.8 Refresh Commands
DDR2 SDRAMs require a refresh of all rows in any rolling 64 ms interval. Each refresh is generated in one of
two ways: by an explicit Auto-Refresh command, or by an internally timed event in SELF REFRESH mode.
Dividing the number of device rows into the rolling 64ms interval, tREFI, which is a guideline to controllers for
distributed refresh timing. For example, a 512Mb DDR2 SDRAM has 8192 rows resulting in a tREFI of 7.8㎲.
To avoid excessive interruptions to the memory controller, higher density DDR2 SDRAMS maintain 7.8㎲
average refresh time and perform multiple internal refresh bursts. In these cases, the refresh recovery times,
tRFC an tXSNR are extended to accomodate these internal operations.
2.8.1 Auto Refresh Command
AUTO REFRESH is used during normal operation of the DDR2 SDRAM. This command is nonpersistent, so
it must be issued each time a refresh is required. The refresh addressing is generated by the internal refresh
controller. This makes the address bits “Don’t Care” during an AUTO REFRESH command.
When CS, RAS and CAS are held low and WE high at the rising edge of the clock, the chip enters the
Refresh mode (REF). All banks of the DDR2 SDRAM must be precharged and idle for a minimum of the Precharge time (tRP) before the Refresh command (REF) can be applied. An address counter, internal to the
device, supplies the bank address during the refresh cycle. No control of the external address bus is required
once this cycle has started.
When the refresh cycle has completed, all banks of the DDR2 SDRAM will be in the precharged (idle) state. A
delay between the Refresh command (REF) and the next Activate command or subsequent Refresh command must be greater than or equal to the Refresh cycle time (tRFC).
To allow for improved efficiency in scheduling andswitching between tasks, some flexibility in the absolute
refresh interval is provided. A maximum of eight Refresh commands can be posted to any given DDR2
SDRAM, meaning that the maximum absolute interval between any Refresh command and the next Refresh
command is 9 * tREFI.
T0
T1
T2
T3
Tm
Tn
Tn + 1
CK/CK
High
CKE
CMD
Precharge
NOP
> = tRFC
> = tRFC
> = tRP
NOP
REF
REF
NOP
ANY
2.8.2 Self Refresh Operation
The Self Refresh command can be used to retain data in the DDR2 SDRAM, even if the rest of the system is
powered down. When in the Self Refresh mod, the DDR2 SDRAM retains data without external clocking.
The DDR2 SDRAM device has a built-in timer to accommodate Self Refresh operation. The Self Refresh
Command is defined by having CS, RAS, CAS and CKE held low with WE high at the rising edge of the clock.
ODT must be turned off before issuing Self Refresh command, by either driving ODT pin low or using EMRS
command. Once the Command is registered, CKE must be held low to keep the device in Self Refresh mode.
The DLL is automatically disabled upon entering Self Refresh and is automatically enabled upon existing Self
Refresh. When the DDR2 SDRAM has entered Self Refresh mode all of the external signals except CKE, are
“don’t care”. The DRAM initiates a minimum of one Auto Refresh command internally within tCKE period once
it enters Self Refresh mode.The clock is internally disabled during Self Refresh Operation to save power. The
minimum time that the DDR2 SDRAM must remain in Self Refresh mode is tCKE. The user may change the
external clock frequency or halt the external clock one clock after Self-Refresh entry is registered, however,
the clock must be restarted and stable before the device can exit Self Refresh operation.
Rev. 0.2 / Oct. 2005
47
1HY5PS12421(L)M
HY5PS12821(L)M
The procedure for existing Self Refresh requires a sequence of commands. First, the clock must be stable
prior to CKE going back HIGH. Once Self Refresh Exit command is registered, a delay equal or longer than
the tXSNR or tXSRD must be satisfied before a valid command can be issued to the device. CKE must
remain high for the entire Self Refresh exit period tXSRD for proper operation. Upon exit from Self Refresh,
the DDR2 SDRAM can be put back into Self Refresh mode after tXSRD expires.NOP or deselect commands
must be registered on each positive clock edge during the Self Refresh exit interval. ODT should also be
turned off during tXSRD.
The Use of Self Refresh mode introduce the possibility that an internally timed refresh event can be missed
when CKE is raised for exit from Self Refresh mode. Upon exit from Self Refresh, the DDR2 SDRAM requires
a minimum of one extra auto refresh command before it is put back into Self Refresh mode.
T0
T1
T2
T3
T4
T5
T6
Tm
Tn
tCK
tCH tCL
CK
CK
> = tXSNR
tRP*
> = tXSRD
CKE
tIS
tIS
tAOFD
ODT
tIS
tIS tIH
CMD
Self
Refresh
NOP
NOP
NOP
Valid
- Device must be in the “All banks idle” state prior to entering Self Refresh mode.
- ODT must be turned off tAOFD before entering Self Refresh mode, and can be turned on again
when tXSRD timing is satisfied.
- tXSRD is applied for a Read or a Read with autoprecharge command
- tXSNR is applied for any command except a Read or a Read with autoprecharge command.
Rev. 0.2 / Oct. 2005
48
1HY5PS12421(L)M
HY5PS12821(L)M
2.9 Power-Down
Power-down is synchronously entered when CKE is registered low (along with Nop or Deselect command). CKE
is not allowed to go low while mode register or extended mode register command time, or read or write operation
is in progress. CKE is allowed to go low while any of other operations such as row activation, precharge or autoprecharge, or auto-refresh is in progress, but power-down IDD spec will not be applied until finishing those operations. Timing diagrams are shown in the following pages with details for entry into power down.
The DLL should be in a locked state when power-down is entered. Otherwise DLL should be reset after exiting
power-down mode for proper read operation.
If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down
occurs when there is a row active in any bank, this mode is referred to as active power-down. Entering powerdown deactivates the input and output buffers, excluding CK, CK, ODT and CKE. Also the DLL is disabled upon
entering precharge power-down or slow exit active power-down, but the DLL is kept enabled during fast exit
active power-down. In power-down mode, CKE low and a stable clock signal must be maintained at the inputs of
the DDR2 SDRAM, and ODT should be in a valid state but all other input signals are “Don’t Care”. CKE low must
be maintained until tCKE has been satisfied. Power-down duration is limited by 9 times tREFI of the device.
The power-down state is synchronously exited when CKE is registered high (along with a Nop or Deselect command). CKE high must be maintained until tCKE has been satisfied. A valid, executable command can be applied
with power-down exit latency, tXP, tXARD, or tXARDS, after CKE goes high. Power-down exit latency is defined
at AC spec table of this data sheet.
Basic Power Down Entry and Exit timing diagram
CK/CK
tIS
tIH
tIH
tIS tIH
tIH
tIS
tIS tIH
CKE
Command
VALID
NOP
tCKE
NOP
tCKE
VALID
VALID
tXP, tXARD,
tXARDS
tCKE
Enter Power-Down mode
Exit Power-Down mode
Rev. 0.2 / Oct. 2005
VALID
Don’t Care
49
1HY5PS12421(L)M
HY5PS12821(L)M
Read to power down entry
T0
T1
T2
Tx
Tx+1
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+7
Tx+8
Tx+9
CK
CK
CMD
Read operation starts with a read command and
CKE should be kept high until the end of burst operation.
RD
BL=4
CKE
AL + CL
DQ
Q
Q
Q
Q
DQS
DQS
T0
CMD
T1
T2
Tx
Tx+1
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+7
Tx+8
Tx+9
RD
CKE should be kept high until the end of burst operation.
BL=8
CKE
AL + CL
DQ
Q
Q
Q
Q
Q
Q
Q
Q
DQS
DQS
Read with Autoprecharge to power down entry
T0
T1
T2
Tx
Tx+1
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+7
Tx+8
Tx+9
CK
CK
CMD
RDA
PRE
BL=4
AL + BL/2
with tRTP = 7.5ns
& tRAS min satisfied
CKE
CKE should be kept high
until the end of burst operation.
AL + CL
DQ
Q
Q
Q
Q
DQS
DQS
T0
T1
T2
Tx
Tx+1
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+7
Tx+8
Tx+9
Start internal precharge
CMD
RDA
BL=8
AL + BL/2
with tRTP = 7.5ns
& tRAS min satisfied
PRE
CKE should be kept high
until the end of burst operation.
CKE
AL + CL
DQ
Q
Q
Q
Q
Q
Q
Q
Q
DQS
DQS
Rev. 0.2 / Oct. 2005
50
1HY5PS12421(L)M
HY5PS12821(L)M
Write to power down entry
T0
T1
Tm
Tm+1
Tm+2
Tm+3
Tx
Tx+1
Tx+2
Ty
Ty+1
Ty+2
Ty+3
Tm+5
Tx
Tx+1
Tx+2
Tx+3
Tx+4
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx
Tx+1
Tx+2
Tx+3
Tx+4
CK
CK
CMD
WR
BL=4
CKE
WL
DQ
D
D
D
D
tWTR
DQS
DQS
T0
CMD
T1
Tm
Tm+1
Tm+2
Tm+3
Tm+4
D
D
D
D
WR
BL=8
CKE
WL
DQ
D
D
D
D
tWTR
DQS
DQS
Write with Autoprecharge to power down entry
T0
T1
Tm
Tm+1
Tm+2
Tm+3
Tx
Tx+1
CK
CK
CMD
WRA
PRE
BL=4
CKE
WL
DQ
D
D
D
D
WR*1
DQS
DQS
T0
T1
Tm
Tm+1
Tm+2
Tm+3
Tm+4
Tm+5
CK
CK
CMD
WRA
PRE
BL=8
CKE
DQ
WL
D
D
D
D
D
D
D
D
WR*1
DQS
DQS
* 1: WR is programmed through MRS
Rev. 0.2 / Oct. 2005
51
1HY5PS12421(L)M
HY5PS12821(L)M
Refresh command to power down entry
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
CK
CMD
REF
CKE can go to low one clock after an Auto-refresh command
CKE
Active command to power down entry
CMD
ACT
CKE can go to low one clock after an Active command
CKE
Precharge/Precharge all command to power down entry
CMD
PR or
PRA
CKE can go to low one clock after a Precharge or Precharge all command
CKE
MRS/EMRS command to power down entry
CMD
MRS or
EMRS
CKE
tMRD
Rev. 0.2 / Oct. 2005
52
1HY5PS12421(L)M
HY5PS12821(L)M
2.10 Asynchronous CKE Low Event
DRAM requires CKE to be maintained “HIGH” for all valid operations as defined in this data sheet. If CKE asynchronously drops “LOW” during any valid operation DRAM is not guaranteed to preserve the contents of array. If
this event occurs, memory controller must satisfy DRAM timing specification tDelay before turning off the clocks.
Stable clocks must exist at the input of DRAM before CKE is raised “HIGH” again. DRAM must be fully re-initialized (steps 4 thru 13) as described in initializaliation sequence. DRAM is ready for normal operation after the initialization sequence. See AC timing parametric table for tDelay specification
Stable clocks
tCK
CK#
CK
tDelay
CKE
CKE asynchronously drops low
Rev. 0.2 / Oct. 2005
Clocks can be turned
off after this point
53
1HY5PS12421(L)M
HY5PS12821(L)M
Input Clock Frequency Change during Precharge Power Down
DDR2 SDRAM input clock frequency can be changed under following condition:
DDR2 SDRAM is in precharged power down mode. ODT must be turned off and CKE must be at logic LOW level.
A minimum of 2 clocks must be waited after CKE goes LOW before clock frequency may change. SDRAM input
clock frequency is allowed to change only within minimum and maximum operating frequency specified for the
particular speed grade. During input clock frequency change, ODT and CKE must be held at stable LOW levels.
Once input clock frequency is changed, stable new clocks must be provided to DRAM before precharge power
down may be exited and DLL must be RESET via EMRS after precharge power down exit. Depending on new
clock frequency an additional MRS command may need to be issued to appropriately set the WR, CL etc.. During
DLL re-lock period, ODT must remain off. After the DLL lock time, the DRAM is ready to operate with new clock
frequency.
Clock Frequency Change in Precharge Power Down Mode
T0
T1
T2
NOP
NOP
T4
Tx
Tx+1
Ty
Ty+1
Ty+2
Ty+3
Ty+4
Tz
CK
CK
CMD
CKE
NOP
NOP
Frequency Change
Occurs here
DLL
RESET
NOP
Valid
200 Clocks
ODT
tRP
tXP
ODT is off during
DLL RESET
tAOFD
Minmum 2 clocks
required before
changing frequency
Rev. 0.2 / Oct. 2005
Stable new clock
before power down exit
54
1HY5PS12421(L)M
HY5PS12821(L)M
2.11 No Operation Command
The No Operation command should be used in cases when the DDR2 SDRAM is in an idle or a wait state.
The purpose of the No Operation command (NOP) is to prevent the DDR2 SDRAM from registering any
unwanted commands between operations. A No Operation command is registered when CS is low with
RAS, CAS, and WE held high at the rising edge of the clock. A No Operation command will not terminate a
previous operation that is still executing, such as a burst read or write cycle.
2.12 Deselect Command
The Deselect command performs the same function as a No Operation command. Deselect command
occurs when CS is brought high at the rising edge of the clock, the RAS, CAS, and WE signals become
don’t cares.
Rev. 0.2 / Oct. 2005
55
1HY5PS12421(L)M
HY5PS12821(L)M
3. Truth Tables
3.1 Command truth table.
CKE
Function
CS
RAS
CAS
WE
BA0
BA1
BA2
A15-A11
A10
A9 - A0
Notes
Previous
Cycle
Current
Cycle
(Extended) Mode Register Set
H
H
L
L
L
L
BA
Refresh (REF)
H
H
L
L
L
H
X
X
X
X
1
Self Refresh Entry
H
L
L
L
L
H
X
X
X
X
1
H
X
X
X
Self Refresh Exit
L
H
X
X
X
X
1,7
L
H
H
H
OP Code
1,2
Single Bank Precharge
H
H
L
L
H
L
BA
X
L
X
1,2
Precharge all Banks
H
H
L
L
H
L
X
X
H
X
1
Bank Activate
H
H
L
L
H
H
BA
Write
H
H
L
H
L
L
BA
Column
L
Column
1,2,3,
Write with Auto Precharge
H
H
L
H
L
L
BA
Column
H
Column
1,2,3,
Read
H
H
L
H
L
H
BA
Column
L
Column
1,2,3
Read with Auto-Precharge
H
H
L
H
L
H
BA
Column
H
Column
1,2,3
No Operation
H
X
L
H
H
H
X
X
X
X
1
Device Deselect
H
X
H
X
X
X
X
X
X
X
1
H
X
X
X
Power Down Entry
H
L
X
X
X
X
1,4
L
H
H
H
H
X
X
X
X
X
X
X
1,4
L
H
H
H
Power Down Exit
L
H
Row Address
1,2
1. All DDR2 SDRAM commands are defined by states of CS, RAS, CAS , WE and CKE at the rising edge of the clock.
2. Bank addesses BA0, BA1, BA2 (BA) determine which bank is to be operated upon. For (E)MRS BA selects an (Extended) Mode
Register.
3. Burst reads or writes at BL=4 cannot be terminated or interrupted. See sections "Reads interrupted by a Read" and "Writes interrupted by a Write" in section 2.2.4 for details.
4. The Power Down Mode does not perform any refresh operations. The duration of Power Down is therefore limited by the refresh
requirements outlined in section 2.2.7.
5. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh. See
section 2.2.2.4.
6. “X” means “H or L (but a defined logic level)”.
7. Self refresh exit is asynchronous.
Rev. 0.2 / Oct. 2005
56
1HY5PS12421(L)M
HY5PS12821(L)M
3.2 Clock Enable (CKE) Truth Table for Synchronous Transitions
CKE
Current State 2
Previous Cycle
(N-1)
1
Command (N) 3
Current Cycle
(N)
1
Action (N) 3
Notes
RAS, CAS, WE, CS
L
L
X
Maintain Power-Down
11, 13, 15
L
H
DESELECT or NOP
Power Down Exit
4, 8, 11,13
L
L
X
Maintain Self Refresh
11, 15
L
H
DESELECT or NOP
Self Refresh Exit
4, 5,9
H
L
DESELECT or NOP
Active Power Down Entry
4,8,10,11,13
H
L
DESELECT or NOP
Precharge Power Down Entry
4, 8, 10,11,13
H
L
REFRESH
Self Refresh Entry
6, 9, 11,13
H
H
Power Down
Self Refresh
Bank(s) Active
All Banks Idle
Refer to the Command Truth Table
7
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
CKE (N) is the logic state of CKE at clock edge N; CKE (N–1) was the state of CKE at the previous clock edge.
Current state is the state of the DDR SDRAM immediately prior to clock edge N.
COMMAND (N) is the command registered at clock edge N, and ACTION (N) is a result of COMMAND (N).
All states and sequences not shown are illegal or reserved unless explicitely described elsewhere in this document.
On Self Refresh Exit DESELECT or NOP commands must be issued on every clock edge occurring during the tXSNR period.
Read commands may be issued only after tXSRD (200 clocks) is satisfied.
Self Refresh mode can only be entered from the All Banks Idle state.
Must be a legal command as defined in the Command Truth Table.
Valid commands for Power Down Entry and Exit are NOP and DESELECT only.
Valid commands for Self Refresh Exit are NOP and DESELECT only.
Power Down and Self Refresh can not be entered while Read or Write operations, (Extended) Mode Register Set operations or
Precharge operations are in progress. See section 2.2.9 "Power Down" and 2.2.8 "Self Refresh Command" for a detailed list of
restrictions.
Minimum CKE high time is three clocks.; minimum CKE low time is three clocks.
The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh. See
section 2.2.2.4.
The Power Down does not perform any refresh operations. The duration of Power Down Mode is therefore limited by the refresh
requirements outlined in section 2.2.7.
CKE must be maintained high while the SDRAM is in OCD calibration mode .
“X” means “don’t care (including floating around VREF)” in Self Refresh and Power Down. However ODT must be driven high or
low in Power Down if the ODT fucntion is enabled (Bit A2 or A6 set to “1” in EMRS(1) ).
3.3 DM Truth Table
Name (Functional)
DM
DQs
Note
Write enable
L
Valid
1
Write inhibit
H
X
1
1. Used to mask write data, provided coinsident with the corresponding data
Rev. 0.2 / Oct. 2005
57
1HY5PS12421(L)M
HY5PS12821(L)M
4. Operating Conditions
4.1 Absolute Maximum DC Ratings
Symbol
Rating
Units
Notes
Voltage on VDD pin relative to Vss
- 1.0 V ~ 2.3 V
V
1
VDDQ
Voltage on VDDQ pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
VDDL
Voltage on VDDL pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
Voltage on any pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
-55 to +100
°C
1
VDD
VIN, VOUT
TSTG
1.
Parameter
Storage Temperature
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
4.2 Operating Temperature Condition
Symbol
Toper
Parameter
Operating Temperature
Rating
Units
Notes
0 to 85
°C
1,2
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions,
please refer to JESD51-2 standard.
2. The operatin temperature range are the temperature where all DRAM specification will be supported. Outside of this temperature
rang, even it is still within the limit of stress condition, some deviation on portion of operation specification may be required. During
operation, the DRAM case temperature must be maintained between 0 ~ 85°C under all other specification parameters. However,
in some applications, it is desirable to operate the DRAM up to 95°C case temperature. Therefore 2 spec options may exist.
1) Supporting 0 - 85°C with full JEDEC AC & DC specifications. This is the minimum requirements for all oprating temperature options.
2) Supporting 0 - 85°C and being able to extend to 95°C with doubling auto-refresh commands in frequency to a 32 ms
period(tRFI=3.9us).
Note; Self-refresh period within the above DRAM is hard coded at 64ms(tREFI= 7.8us). Therfore, it is imperative that the system ensures
the DRAM is at or below 85°C case temperature before initiating self-refresh operation.
Rev. 0.2 / Oct. 2005
58
1HY5PS12421(L)M
HY5PS12821(L)M
5. AC & DC Operating Conditons
5.1 DC Operation Conditions
5.1.1 Recommended DC Operating Conditions (SSTL_1.8)
Rating
Symbol
Parameter
Units
Min.
Typ.
Max.
Notes
VDD
Supply Voltage
1.7
1.8
1.9
V
VDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
4
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
4
VREF
Input Reference Voltage
0.49*VDDQ
0.50*VDDQ
0.51*VDDQ
mV
1, 2
Termination Voltage
VREF-0.04
VREF
VREF+0.04
V
3
VTT
There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must
be less than or equal to VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is
expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
2. Peak to peak ac noise on VREF may not exceed +/-2% VREF (dc).
3. VTT of transmitting device must track VREF of receiving device.
4. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDDL tied together
5.1.2 ODT DC electrical characteristics
PARAMETER/CONDITION
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm
Deviation of VM with respect to VDDQ/2
SYMBOL
MIN
NOM
Rtt1(eff)
Rtt2(eff)
delta VM
60
120
-3.75
75
150
MAX
UNITS NOTES
90
ohm
180 ohm
+3.75 %
1
1
1
Note 1: Test condition for Rtt measurements
Measurement Definition for Rtt(eff): Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH
(ac)) and I( VIL (ac)) respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18
Rtt(eff) =
VIH (ac) - VIL (ac)
I(VIH (ac)) - I(VIL (ac))
Measurement Definition for VM : Measurement Voltage at test pin(mid point) with no load.
2 x Vm
delta VM =
Rev. 0.2 / Oct. 2005
VDDQ
-1
x 100%
59
1HY5PS12421(L)M
HY5PS12821(L)M
5.2 DC & AC Logic Input Levels
5.2.1 Input DC Logic Level
Symbol
Parameter
Min.
Max.
Units
VIH(dc)
dc input logic high
VREF + 0.125
VDDQ + 0.3
V
VIL(dc)
dc input logic low
- 0.3
VREF - 0.125
V
Notes
5.2.2 Input AC Logic Level
Symbol
VIH (ac)
VIL (ac)
Parameter
Min.
Max.
Units
ac input logic high
VREF + 0.250
-
V
ac input logic low
-
VREF - 0.250
V
Value
Units
Notes
5.2.3 AC Input Test Conditions
Symbol
Condition
Notes
VREF
Input reference voltage
0.5 * VDDQ
V
1
VSWING(MAX)
Input signal maximum peak to peak swing
1.0
V
1
SLEW
Input signal minimum slew rate
1.0
V/ns
2, 3
Notes:
1.
2.
3.
Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device under test.
The input signal minimum slew rate is to be maintained over the range from VIL(dc) to VIH(ac) min for rising edges and the range
from VIH(dc) to VIL(ac) max for falling edges as shown in the below figure.
AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions and VIH(ac) to
VIL(ac) on the negative transitions.
VDDQ
VIH(ac) min
VIH(dc) min
VREF
VIL(dc) max
VIL(ac) max
VSS
VSWING(MAX)
delta TF
Falling Slew =
delta TR
VREF - VIL(ac) max
delta TF
Rising Slew =
VIH(ac)min - VREF
delta TR
< Figure : AC Input Test Signal Waveform>
Rev. 0.2 / Oct. 2005
60
1HY5PS12421(L)M
HY5PS12821(L)M
5.2.4 Differential Input AC logic Level
Symbol
Parameter
VID (ac)
ac differential input voltage
VIX (ac)
ac differential cross point voltage
Min.
Max.
Units
Notes
0.5
VDDQ + 0.6
V
1
0.5 * VDDQ - 0.175
0.5 * VDDQ + 0.175
V
2
1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS, LDQS, LDQS, UDQS and
UDQS.
2. VID(DC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input (such as CK, DQS, LDQS
or UDQS) level and VCP is the complementary input (such as CK, DQS, LDQS or UDQS) level. The minimum value is equal to VIH(DC) - V
IL(DC).
VDDQ
VTR
Crossing point
VID
VIX or VOX
VCP
VSSQ
< Differential signal levels >
Notes:
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS,
LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V IH(AC)
- V IL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to track variations in
VDDQ . VIX(AC) indicates the voltage at whitch differential input signals must cross.
5.2.5 Differential AC output parameters
Symbol
VOX (ac)
Parameter
ac differential cross point voltage
Min.
Max.
Units
Notes
0.5 * VDDQ - 0.125
0.5 * VDDQ + 0.125
V
1
Notes:
1. The typical value of VOX(AC) is expected to be about 0.5 * V DDQ of the transmitting device and VOX(AC) is expected to track variations
in VDDQ . VOX(AC) indicates the voltage at whitch differential output signals must cross.
Rev. 0.2 / Oct. 2005
61
1HY5PS12421(L)M
HY5PS12821(L)M
5.2.6 Overshoot/Undershoot Specification
AC Overshoot/Undershoot Specification for Address and Control Pins A0-A15, BA0-BA2, CS, RAS, CAS, WE,
CKE, ODT
Specification
Parameter
DDR2-400
DDR2-533
DDR2-667
Maximum peak amplitude allowed for overshoot area (See Figure 1):
0.9V
0.9V
0.9V
Maximum peak amplitude allowed for undershoot area (See Figure 1):
0.9V
0.9V
0.9V
Maximum overshoot area above VDD (See Figure1).
0.75 V-ns
0.56 V-ns
0.45 V-ns
Maximum undershoot area below VSS (See Figure 1).
0.75 V-ns
0.56 V-ns
0.45 V-ns
Maximum Amplitude
Overshoot Area
Volts
(V)
VDD
VSS
Undershoot Area
Maximum Amplitude
Time (ns)
Figure 1: AC Overshoot and Undershoot Definition for Address and Control Pins
AC Overshoot/Undershoot Specification for Clock, Data, Strobe, and Mask Pins DQ, DQS, DM, CK, CK
Specification
Parameter
DDR2-400
DDR2-533
DDR2-667
Maximum peak amplitude allowed for overshoot area (See Figure 2):
0.9V
0.9V
0.9V
Maximum peak amplitude allowed for undershoot area (See Figure 2):
0.9V
0.9V
0.9V
Maximum overshoot area above VDDQ (See Figure 2).
0.38 V-ns
0.28 V-ns
0.23 V-ns
Maximum undershoot area below VSSQ (See Figure 2).
0.38 V-ns
0.28 V-ns
0.23 V-ns
Maximum Amplitude
Overshoot Area
Volts
(V)
VDDQ
VSSQ
Undershoot Area
Maximum Amplitude
Time (ns)
Figure 2: AC Overshoot and Undershoot Definition for Clock, Data, Strobe, and Mask Pins
Rev. 0.2 / Oct. 2005
62
1HY5PS12421(L)M
HY5PS12821(L)M
Power and ground clamps are required on the following input only pins:
1. BA0-BA2
2. A0-A15
3. RAS
4. CAS
5. WE
6. CS
7. ODT
8. CKE
V-I Characteristics table for input only pins with clamps
Voltage across
clamp(V)
Minimum Power Minimum Ground
Clamp Current (mA) Clamp Current (mA)
0.0
0
0
0.1
0
0
0.2
0
0
0.3
0
0
0.4
0
0
0.5
0
0
0.6
0
0
0.7
0
0
0.8
0.1
0.1
0.9
1.0
1.0
1.0
2.5
2.5
1.1
4.7
4.7
1.2
6.8
6.8
1.3
9.1
9.1
1.4
11.0
11.0
1.5
13.5
13.5
1.6
16.0
16.0
1.7
18.2
18.2
1.8
21.0
21.0
Rev. 0.2 / Oct. 2005
63
1HY5PS12421(L)M
HY5PS12821(L)M
5.3 Output Buffer Levels
5.3.1 Output AC Test Conditions
Symbol
SSTL_18 Class II
Units
VOH
Minimum Required Output Pull-up under AC Test Load
Parameter
VTT + 0.603
V
Notes
VOL
Maximum Required Output Pull-down under AC Test Load
VTT - 0.603
V
VOTR
Output Timing Measurement Reference Level
0.5 * VDDQ
V
SSTl_18 Class II
Units
Notes
- 13.4
mA
1, 3, 4
13.4
mA
2, 3, 4
1
1. The VDDQ of the device under test is referenced.
5.3.2 Output DC Current Drive
Symbol
1.
2.
3.
4.
Parameter
IOH(dc)
Output Minimum Source DC Current
IOL(dc)
Output Minimum Sink DC Current
VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ and VDDQ - 280
mV.
VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.
The dc value of VREF applied to the receiving device is set to VTT
The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device drive current
capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an SSTL_18 receiver. The
actual current values are derived by shifting the desired driver operating point (see Section 3.3) along a 21 ohm load line to define
a convenient driver current for measurement.
5.3.3 OCD defalut characteristics
Description
Parameter
Min
Output impedance
12.6
Pull-up and pulldown mismatch
0
Output slew rate
Sout
1.5
Nom
18
-
Max
Unit
Notes
23.4
ohms
1,2
4
ohms
1,2,3
5
V/ns
1,4,5,6,7
Note 1: Absolute Specifications (0°C ≤ TCASE ≤ +95°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)
Note 2: Impedance measurement condition for output source dc current: VDDQ = 1.7V; VOUT = 1420mV;
(VOUT-VDDQ)/Ioh must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ-280mV.
Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV; VOUT/Iol
must be less than 23.4 ohms for values of VOUT between 0V and 280mV.
Note 3: Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and
voltage.
Note 4: Slew rate measured from vil(ac) to vih(ac).
Note 5: The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew
rate as measured from AC to AC. This is guaranteed by design and characterization.
Note 6: DRAM output slew rate specification Table.
Note 7: DRAM output slew rate specification applies to 400MT/s & 533MT/s speed bins.
Rev. 0.2 / Oct. 2005
64
1HY5PS12421(L)M
HY5PS12821(L)M
5.4 Default Output V-I characteristics
DDR2 SDRAM output driver characteristics are defined for full strength default operation as selected by the
EMRS1 bits A7-A9 = ‘111’. The above Figures show the driver characteristics graphically, and tables show the
same data in tabular format suitable for input into simulation tools.
5.4.1 Full Strength Default Pulldown Driver Characteristics
Pulldow n Current (mA)
Voltage (V) Minimum (23.4 Ohms)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
Nominal Default
Low (18 ohms)
Nominal Default
High (18 ohms)
11.3
16.5
21.2
25.0
28.3
30.9
33.0
34.5
35.5
36.1
36.6
36.9
37.1
37.4
37.6
37.7
37.9
11.8
16.8
22.1
27.6
32.4
36.9
40.9
44.6
47.7
50.4
52.6
54.2
55.9
57.1
58.4
59.6
8.5
12.1
14.7
16.4
17.8
18.6
19.0
19.3
19.7
19.9
20.0
20.1
20.2
20.3
20.4
20.6
Maximum (12.6 Ohms)
15.9
23.8
31.8
39.7
47.7
55.0
62.3
69.4
75.3
80.5
84.6
87.7
90.8
92.9
94.9
97.0
99.1
101.1
60.9
120
Pulldown current (mA)
100
Maximum
80
Nominal
Default
High
60
Nominal
Default
Low
40
20
Minimum
0
0.2
0.4
0.3
0.6
0.5
0.8
0.7
1.0
0.9
1.2
1.1
1.4
1.3
1.6
1.5
1.8
1.7
1.9
VOUT to VSSQ (V)
Rev. 0.2 / Oct. 2005
65
1HY5PS12421(L)M
HY5PS12821(L)M
5.4.2 Full Strength Default Pullup Driver Characteristics
Pullup Current (mA)
Voltage (V) Minimum (23.4 Ohms)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
Nominal Default
Low (18 ohms)
Nominal Default
High (18 ohms)
-11.1
-16.0
-20.3
-24.0
-27.2
-29.8
-31.9
-33.4
-34.6
-35.5
-36.2
-36.8
-37.2
-37.7
-38.0
-38.4
-38.6
-11.8
-17.0
-22.2
-27.5
-32.4
-36.9
-40.8
-44.5
-47.7
-50.4
-52.5
-54.2
-55.9
-57.1
-58.4
-59.6
-60.8
-8.5
-12.1
-14.7
-16.4
-17.8
-18.6
-19.0
-19.3
-19.7
-19.9
-20.0
-20.1
-20.2
-20.3
-20.4
-20.6
Maximum (12.6 Ohms)
-15.9
-23.8
-31.8
-39.7
-47.7
-55.0
-62.3
-69.4
-75.3
-80.5
-84.6
-87.7
-90.8
-92.9
-94.9
-97.0
-99.1
-101.1
DDR2 Default Pullup Characteristics for Full Strength Output Driver
0
-20
Pullup current (mA)
Minimum
-40
Nominal
Default
Low
-60
Nominal
Default
High
-80
-100
Maximum
-120
0.2
0.4
0.3
0.6
0.5
0.8
0.7
1.0
0.9
1.2
1.1
1.4
1.3
1.6
1.5
1.8
1.7
1.9
VDDQ to VOUT (V)
Rev. 0.2 / Oct. 2005
66
1HY5PS12421(L)M
HY5PS12821(L)M
5.4.3 Calibrated Output Driver V-I Characteristics
DDR2 SDRAM output driver characteristics are defined for full strength calibrated operation as selected by
the procedure in OCD impedance adjustment. The below Tables show the data in tabular format suitable for
input into simulation tools. The nominal points represent a device at exactly 18 ohms. The nominal low and
nominal high values represent the range that can be achieved with a maximum 1.5 ohm step size with no
calibration error at the exact nominal conditions only (i.e. perfect calibration procedure, 1.5 ohm maximum
step size guaranteed by specification). Real system calibration error needs to be added to these values. It
must be understood that these V-I curves as represented here or in supplier IBIS models need to be
adjusted to a wider range as a result of any system calibration error. Since this is a system specific phenomena, it cannot be quantified here. The values in the calibrated tables represent just the DRAM portion
of uncertainty while looking at one DQ only. If the calibration procedure is used, it is possible to cause the
device to operate outside the bounds of the default device characteristics tables and figures. In such a situation, the timing parameters in the specification cannot be guaranteed. It is solely up to the system application to ensure that the device is calibrated between the minimum and maximum default values at all times.
If this can’t be guaranteed by the system calibration procedure, re-calibration policy, and uncertainty with
DQ to DQ variation, then it is recommended that only the default values be used. The nominal maximum
and minimum values represent the change in impedance from nominal low and high as a result of voltage
and temperature change from the nominal condition to the maximum and minimum conditions. If calibrated
at an extreme condition, the amount of variation could be as much as from the nominal minimum to the
nominal maximum or vice versa. The driver characteristics evaluation conditions are:
Nominal 25 oC (T case), VDDQ = 1.8 V, typical process
Nominal Low and Nominal High 25 oC (T case), VDDQ = 1.8 V, any process
Nominal Minimum TBD oC (T case), VDDQ = 1.7 V, any process
Nominal Maximum 0 oC (T case), VDDQ = 1.9 V, any process
Full Strength Calibrated Pulldown Driver Characteristics
Calibrated Pulldow n Current (mA)
Voltage (V)
Nominal Minimum Nominal Low (18.75
Nominal High (17.25 Nominal Maximum (15
Nominal (18 ohms)
(21 ohms)
ohms)
ohms)
ohms)
0.2
0.3
0.4
9.5
14.3
18.7
10.7
16.0
21.0
11.5
16.6
21.6
11.8
17.4
23.0
13.3
20.0
27.0
Full Strength Calibrated Pullup Driver Characteristics
Calibrated Pullup Current (mA)
Voltage (V)
0.2
0.3
0.4
Rev. 0.2 / Oct. 2005
Nominal Minimum Nominal Low (18.75
Nominal High (17.25Nominal Maximum (15
Nominal (18 ohms)
ohms)
(21 ohms)
ohms)
ohms)
-9.5
-14.3
-18.7
-10.7
-16.0
-21.0
-11.4
-16.5
-21.2
-11.8
-17.4
-23.0
-13.3
-20.0
-27.0
67
1HY5PS12421(L)M
HY5PS12821(L)M
5.5 Input/Output Capacitance(DDP)
Parameter
Input capacitance
(CK and CK)
Input capacitance, all other input-only pins
(A0~A13,BA0~BA1,RAS,CAS,WE,CS0, CS1,
ODT0, ODT1, CKE0,CKE1)
Input/output capacitance
(DQ, DM, DQS, DQS)
Rev. 0.2 / Oct. 2005
DDR2 400
DDR2 533
Symbol
Units
Min
Max
CCK
3.5
5.5
pF
CI
1.5
5
pF
CIO
5.5
7.5
pF
68
1HY5PS12421(L)M
HY5PS12821(L)M
6. IDD Specifications & Measurement Conditions
6.1 IDD Specifications(1Gb DDR2 DDP component)
E3
DDR2 400
C4
DDR2 533
Y5
DDR2 667
x4/x8
x4/x8
x4/x8
IDD0
135
155
175
mA
IDD1
145
165
185
mA
IDD2P
12
14
16
mA
IDD2Q
70
80
100
mA
IDD2N
80
90
110
mA
F
40
50
60
mA
S
10
12
14
mA
IDD3N
110
130
150
mA
IDD4W
205
245
305
mA
IDD4R
185
225
275
mA
IDD5
220
240
265
mA
Normal
11
11
11
mA
Low
power
8
8
8
mA
275
285
295
mA
Symbol
Units
IDD3P
IDD6
IDD7
Rev. 0.2 / Oct. 2005
69
1HY5PS12421(L)M
HY5PS12821(L)M
6.2 IDD Meauarement Conditions
Symbol
Conditions
Units
IDD0
Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD);CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCHING;Data bus
inputs are SWITCHING
mA
IDD1
Operating one bank active-read-precharge curren ; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD) ; CKE is HIGH, CS is HIGH
between valid commands ; Address bus inputs are SWITCHING ; Data pattern is same as IDD4W
mA
IDD2P
Precharge power-down current ; All banks idle ; tCK = tCK(IDD) ; CKE is LOW ; Other control and address
bus inputs are STABLE; Data bus inputs are FLOATING
mA
IDD2Q
Precharge quiet standby current;All banks idle; tCK = tCK(IDD);CKE is HIGH, CS is HIGH; Other control
and address bus inputs are STABLE; Data bus inputs are FLOATING
mA
IDD2N
Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and
address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD3P
Active power-down current; All banks open; tCK = tCK(IDD); CKE is
LOW; Other control and address bus inputs are STABLE; Data bus inputs
are FLOATING
Fast PDN Exit MRS(12) = 0
mA
Slow PDN Exit MRS(12) = 1
mA
IDD3N
Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP =tRP(IDD); CKE is
HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data
bus inputs are SWITCHING
mA
IDD4W
Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK =
tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD4R
Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD),
AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid
commands; Address bus inputs are SWITCHING;; Data pattern is same as IDD4W
mA
IDD5B
Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is
HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
mA
IDD6
Self refresh current; CK and CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are FLOATING;
Data bus inputs are FLOATING
mA
IDD7
Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL
= tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is
HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; - Refer to the following page for detailed timing conditions
mA
Note:
1. IDD specifications are tested after the device is properly initialized
2. Input slew rate is specified by AC Parametric Test Condition
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combinations of EMRS bits 10 and 11.
5. Definitions for IDD
LOW is defined as Vin ≤ VILAC(max)
HIGH is defined as Vin ≥ VIHAC(min)
STABLE is defined as inputs stable at a HIGH or LOW level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals, and
inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including masks or strobes.
Rev. 0.2 / Oct. 2005
70
1HY5PS12421(L)M
HY5PS12821(L)M
For purposes of IDD testing, the following parameters are to be utilized
DDR2-667
DDR2-533
DDR2-400
Parameter
5-5-5
6-6-6
4-4-4
5-5-5
3-3-3
4-4-4
Units
CL(IDD)
5
6
4
5
3
4
tCK
tRCD(IDD)
15
18
15
18.75
15
20
ns
tRC(IDD)
60
63
60
63.75
55
65
ns
tRRD(IDD)-x4/x8
7.5
7.5
7.5
7.5
7.5
7.5
ns
tRRD(IDD)-x16
9
9
10
10
10
10
ns
tCK(IDD)
3
3
3.75
3.75
5
5
ns
tRASmin(IDD)
45
45
45
45
40
45
ns
tRASmax(IDD)
70000
70000
70000
70000
70000
70000
ns
tRP(IDD)
15
18
15
18.75
15
20
ns
tRFC(IDD)-512Mb
105
105
105
105
105
105
ns
Detailed IDD7
The detailed timings are shown below for IDD7. Changes will be required if timing parameter changes are made to the specification.
Legend: A = Active; RA = Read with Autoprecharge; D = Deselect
IDD7: Operating Current: All Bank Interleave Read operation
All banks are being interleaved at minimum tRC(IDD) without violating tRRD(IDD) using a burst length of 4. Control and address bus
inputs are STABLE during DESELECTs. IOUT = 0mA
Timing Patterns for 4 bank devices x4/ x8/ x16
-DDR2-400 4/4/4: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D D D
-DDR2-400 3/3/3: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D D
-DDR2-533 5/4/4: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D
-DDR2-533 4/4/4: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D
Rev. 0.2 / Oct. 2005
71
1HY5PS12421(L)M
HY5PS12821(L)M
7. AC Timing Specifications
7.1 Timing Parameters by Speed Grade
Parameter
Symbol
DDR2-400 3-3-3
DDR2-533 4-4-4
min
max
min
max
Unit
Note
DQ output access time from
CK/CK
tAC
-600
+600
-500
+500
ps
DQS output access time from
CK/CK
tDQSCK
-500
+500
-450
+450
ps
CK high-level width
tCH
0.45
0.55
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
0.45
0.55
tCK
CK half period
tHP
min(tCL,
tCH)
-
min(tCL,
tCH)
-
ps
11,12
Clock cycle time, CL=x
tCK
5000
8000
3750
8000
ps
15
DQ and DM input hold time
tDH
400
-
350
-
ps
6,7,8
DQ and DM input setup time
tDS
400
-
350
-
ps
6,7,8
Control & Address input pulse
width for each input
tIPW
0.6
-
0.6
-
tCK
DQ and DM input pulse width for
each input
tDIPW
0.35
-
0.35
-
tCK
Data-out high-impedance time
from CK/CK
tHZ
-
tAC max
-
tAC max
ps
DQS low-impedance time from
CK/CK
tLZ
(DQS)
tAC min
tAC max
tAC min
tAC max
ps
DQ low-impedance time from
CK/CK
tLZ
(DQ)
2*tAC min
tAC max
2*tAC min
tAC max
ps
DQS-DQ skew for DQS and
associated DQ signals
tDQSQ
-
350
-
300
ps
13
DQ hold skew factor
tQHS
-
450
-
400
ps
12
DQ/DQS output hold time from
DQS
tQH
tHP - tQHS
-
tHP - tQHS
-
ps
Write command to first DQS
latching transition
tDQSS
WL - 0.25
WL + 0.25
WL - 0.25
WL + 0.25
tCK
DQS input high pulse width
tDQSH
0.35
-
0.35
-
tCK
DQS input low pulse width
tDQSL
0.35
-
0.35
-
tCK
DQS falling edge to CK setup time
tDSS
0.2
-
0.2
-
tCK
DQS falling edge hold time from
CK
tDSH
0.2
-
0.2
-
tCK
Mode register set command cycle
time
tMRD
2
-
2
-
tCK
Rev. 0.2 / Oct. 2005
72
1HY5PS12421(L)M
HY5PS12821(L)M
Parameter
Symbol
DDR2-400 3-3-3
DDR2-533 4-4-4
min
max
min
max
Unit
Note
10
Write postamble
tWPST
0.4
0.6
0.4
0.6
tCK
Write preamble
tWPRE
0.25
-
0.25
-
tCK
Address and control input hold
time
tIH
600
-
500
-
ps
5,7,9
Address and control input setup
time
tIS
600
-
500
-
ps
5,7,9
Read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
0.4
0.6
tCK
Active to precharge command
tRAS
40*
70000
45
70000
ns
Active to Read or Write
(with and without Auto-Precharge)
delay
tRCD
15
-
15
-
ns
Auto-Refresh to Active/AutoRefresh command period
tRFC
105
-
105
-
ns
Precharge Command Period
tRP
15
-
15
-
ns
Active to Active/Auto-Refresh
command period
tRC
55*
-
60
-
ns
Active to active command period
for 1KB page size(x4,x8)
tRRD
7.5
-
7.5
-
ns
4
Active to active command period
for 2KB page size(x16)
tRRD
10
-
10
-
ns
4
CAS to CAS command delay
tCCD
2
Write recovery time
tWR
15
-
15
-
ns
Auto precharge write recovery +
precharge time
tDAL
WR+tRP
-
WR+tRP
-
tCK
Internal write to read command
delay
tWTR
2
-
2
-
tCK
Internal read to precharge
command delay
tRTP
7.5
7.5
ns
Exit self refresh to a non-read
command
tXSNR
tRFC + 10
tRFC + 10
ns
Exit self refresh to a read
command
tXSRD
200
-
200
-
tCK
Exit precharge power down to any
non-read command
tXP
2
-
2
-
tCK
Rev. 0.2 / Oct. 2005
2
3
tCK
14
3
73
1HY5PS12421(L)M
HY5PS12821(L)M
Parameter
Symbol
DDR2-400 3-3-3
min
Exit active power down to read
command
tXARD
Exit active power down to read
command
(Slow exit, Lower power)
tXARDS
CKE minimum pulse width
(high and low pulse width)
t
Average periodic Refresh
Interval
tREFI
CKE
t
ODT turn-on delay
max
DDR2-533 4-4-4
min
Unit
Note
max
2
2
tCK
1
6 - AL
6 - AL
tCK
1, 2
3
3
7.8
tCK
7.8
us
AOND
2
2
2
2
tCK
tAON
tAC(min)
tAC(max)+1
tAC(min)
tAC(max)+
1
ns
AONPD
tAC(min)+2
2tCK+tAC
(max)+1
tAC(min)+2
2tCK+tAC
(max)+1
ns
AOFD
2.5
2.5
2.5
2.5
tCK
tAOF
tAC(min)
tAC(max)+
0.6
tAC(min)
tAC(max)+
0.6
ns
AOFPD
tAC(min)+2
2.5tCK+tAC
(max)+1
tAC(min)+2
2.5tCK+tA
C(max)+1
ns
ODT to power down entry
latency
tANPD
3
3
tCK
ODT power down exit latency
tAXPD
8
8
tCK
OCD drive mode output delay
tOIT
0
Minimum time clocks remains
ON after CKE asynchronously
drops LOW
tDelay
tIS+tCK+tIH
ODT turn-on
ODT turn-on(Power-Down
mode)
t
t
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down
mode)
t
12
0
tIS+tCK+tI
H
12
16
17
ns
ns
15
* : tRAS(min) , tRC(min) specification for DDR2-400 4-4-4 is 45ns, 60ns respectively.
Rev. 0.2 / Oct. 2005
74
1HY5PS12421(L)M
HY5PS12821(L)M
7.2 General notes, which may apply for all AC parameters
1. Slew Rate Measurement Levels
a. Output slew rate for falling and rising edges is measured between VTT - 250 mV and VTT + 250 mV for
single ended signals. For differential signals (e.g. DQS - DQS) output slew rate is measured between
DQS - DQS = -500 mV and DQS - DQS = +500mV. Output slew rate is guaranteed by design, but is not
necessarily tested on each device.
b. Input slew rate for single ended signals is measured from dc-level to ac-level: from VREF - 125 mV to
VREF + 250 mV for rising edges and from VREF + 125 mV and VREF - 250 mV for falling edges.
For differential signals (e.g. CK - CK) slew rate for rising edges is measured from CK - CK = -250 mV to
(250mV to -500 mV for falling egdes).
CK - CK = +500 mV
c. VID is the magnitude of the difference between the input voltage on CK and the input voltage on CK, or
between DQS and DQS for differential strobe.
2. DDR2 SDRAM AC timing reference load
The following fiture represents the timing reference load used in defining the relevant timing parameters of
the part. It is not intended to be either a precise representation of the typical system environment nor a depiction of the actual load presented by a production tester. System designers will use IBIS or other simulation
tools to correlate the timing reference load to a system environment. Manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the tester electronics).
VDDQ
DUT
DQ
DQS
DQS
RDQS
RDQS
Output
Timing
reference
point
VTT = VDDQ/2
25Ω
AC Timing Reference Load
The output timing reference voltage level for single ended signals is the crosspoint with VTT. The output timing reference voltage level for differential signals is the crosspoint of the true (e.g. DQS) and the complement
(e.g. DQS) signal.
3. DDR2 SDRAM output slew rate test load
Output slew rate is characterized under the test conditions as shown below.
VDDQ
DUT
DQ
DQS, DQS
RDQS, RDQS
Output
Test point
VTT = VDDQ/2
25Ω
Slew Rate Test Load
4. Differential data strobe
DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the
setting of the EMRS “Enable DQS” mode bit; timing advantages of differential mode are realized in system
design. The method by which the DDR2 SDRAM pin timings are measured is mode dependent. In single
Rev. 0.2 / Oct. 2005
75
1HY5PS12421(L)M
HY5PS12821(L)M
VREF. In differential mode, these timing relationships are measured relative to the crosspoint of DQS and
its complement, DQS. This distinction in timing methods is guaranteed by design and characterization.
Note that when differential data strobe mode is disabled via the EMRS, the complementary pin, DQS, must
be tied externally to VSS through a 20 ohm to 10 K ohm resistor to insure proper operation.
tDQSH
DQS
DQS/
DQS
tDQSL
DQS
tWPRE
tWPST
DQ
D
D
tDS
DM
tDH
tDS
DMin
D
D
DMin
DMin
tDH
DMin
Figure -- Data input (write) timing
tCH
tCL
CK
CK/CK
CK
DQS
DQS/DQS
DQS
tRPRE
tRPST
DQ
Q
Q
tDQSQmax
Q
Q
tDQSQmax
tQH
tQH
Figure -- Data output (read) timing
5. AC timings are for linear signal transitions. See System Derating for other signal transitions.
6. These parameters guarantee device behavior, but they are not necessarily tested on each device. They
may be guaranteed by device design or tester correlation.
7. All voltages referenced to VSS.
8. Tests for AC timing, IDD, and electrical (AC and DC) characteristics, may be conducted at nominal reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full
voltage range specified.
Rev. 0.2 / Oct. 2005
76
1HY5PS12421(L)M
HY5PS12821(L)M
7.3 Specific Notes for dedicated AC parameters
1. User can choose which active power down exit timing to use via MRS(bit 12). tXARD is expected to be
used for fast active power down exit timing. tXARDS is expected to be used for slow active power down
exit timing where a lower power value is defined by each vendor data sheet.
2. AL = Additive Latency
3. This is a minimum requirement. Minimum read to precharge timing is AL + BL/2 providing the tRTP and
tRAS(min) have been satisfied.
4. A minimum of two clocks (2 * tCK) is required irrespective of operating frequency
5. Timings are guaranteed with command/address input slew rate of 1.0 V/ns. See System Derating for
other slew rate values.
6. Timings are guaranteed with data, mask, and (DQS/RDQS in singled ended mode) input slew rate of 1.0
V/ns. See System Derating for other slew rate values.
7. Timings are guaranteed with CK/CK differential slew rate of 2.0 V/ns. Timings are guaranteed for DQS
signals with a differential slew rate of 2.0 V/ns in differential strobe mode and a slew rate of 1V/ns in single
ended mode. See System Derating for other slew rate values.
8. tDS and tDH (data setup and hold) derating
tbd
9. tIS and tIH (input setup and hold) derating
tbd
10. The maximum limit for this parameter is not a device limit. The device will operate with a greater value
for this parameter, but system performance (bus turnaround) will degrade accordingly.
11. MIN ( t CL, t CH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for t CL and t CH).
For example, t CL and t CH are = 50% of the period, less the half period jitter ( t JIT(HP)) of the clock
source, and less the half period jitter due to crosstalk ( t JIT(crosstalk)) into the clock traces.
12. t QH = t HP – t QHS, where:
tHP = minimum half clock period for any given cycle and is defined by clock high or clock low ( tCH,
tCL).
tQHS accounts for:
1) The pulse duration distortion of on-chip clock circuits; and
2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the
next transition, both of which are, separately, due to data pin skew and output pattern effects, and
pchannel to n-channel variation of the output drivers.
13. tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of
the output drivers for any given cycle.
14. t DAL = (nWR) + ( tRP/tCK):
For each of the terms above, if not already an integer, round to the next highest integer. tCK refers to the
Rev. 0.2 / Oct. 2005
77
1HY5PS12421(L)M
HY5PS12821(L)M
application clock period. nWR refers to the t WR parameter stored in the MRS.
Example: For DDR533 at t CK = 3.75 ns with t WR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns)
clocks =4 +(4)clocks=8clocks.
15. The clock frequency is allowed to change during self–refresh mode or precharge power-down mode. In
case of clock frequency change during precharge power-down, a specific procedure is required as
described in section 2.9.
16. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn
on.
ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND.
17. ODT turn off time min is when the device starts to turn off ODT resistance.
ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD.
Rev. 0.2 / Oct. 2005
78
1HY5PS12421(L)M
HY5PS12821(L)M
8. Package Dimensions
8.1 DDP Package Dimension(x4,x8)
63Ball Fine Pitch Ball Grid Array Outline
12.33 +/- 0.10
14.00 +/- 0.10
A1 Ball Mark
<Top View>
1.25 +/- 0.10.
H
A B C D
E F G
0.80
0.8 x 10 = 8.0
J
K
L
0.290 +/- 0.05
60 - φ 0.50
A1 Ball Mark
0.80
1
2
3
7
8
9
0.80 x 8 = 6.40
<Bottom View>
note: all dimension units are Millimeters.
Rev. 0.2 / Oct. 2005
79