Preliminary Technical Information IXGH90N60B3 GenX3TM 600V IGBT VCES IC110 VCE(sat) tfi(typ) Medium speed low Vsat PT IGBTs 5-40 kHz switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C (Limited by leads) TC = 110°C (Chip capability) TC = 25°C, 1ms 75 90 500 A A A SSOA VGE = 15V, TVJ = 125°C, RG = 2Ω ICM = 180 A (RBSOA) Clamped inductive load @ VCE ≤ 600V PC TC = 25°C 660 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 1.13 / 10 Nm/lb.in. z 300 260 °C °C z 6 g Md Mounting torque TL TSOLD Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Weight 600V 90A 1.8V 148ns TO-247 AD (IXGH) Symbol TJ = = ≤£ = G C C (TAB) E G = Gate E = Emitter C = Collector TAB = Collector Features z Optimized for low conduction and switching losses Square RBSOA International standard package Advantages z z High power density Low gate drive requirement Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES VGE(th) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE 600 3.0 ICES VCE = VCES VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 90A, VGE = 15V, Note 1 © 2008 IXYS CORPORATION, All rights reserved TJ = 125°C TJ = 125°C 1.55 1.62 z z 5.0 V V 75 750 μA μA z ±100 nA z 1.80 V V z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99994(05/08) IXGH90N60B3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 55 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 90A, VGE = 15V, VCE = 0.5 • VCES 90 S 8285 525 140 pF pF pF 172 28 63 nC nC nC 31 ns 47 1.32 ns mJ 150 ns td(on) tri Eon td(off) tfi Inductive load, TJ = 25°°C IC = 60A, VGE = 15V VCE = 480V, RG = 2Ω TO-247 AD Outline 148 250 ns Eoff 1.37 2.40 mJ td(on) tri Eon td(off) tfi Eoff 29 43 1.93 220 253 2.80 ns ns mJ ns ns mJ 0.21 0.19 °C/W °C/W Inductive load, TJ = 125°°C IC = 60A,VGE = 15V VCE = 480V,RG = 2Ω RthJC RthCS ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH90N60B3 Fig. 1. Output Characteristics @ 25ºC 180 350 VGE = 15V 13V 11V 160 VGE = 15V 11V 9V 300 140 9V 250 120 IC - Amperes IC - Amperes Fig. 2. Extended Output Characteristics @ 25ºC 100 7V 80 60 200 150 7V 100 40 50 20 5V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 1 2 3 5 6 7 8 9 10 125 150 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 180 1.5 VGE = 15V 13V 11V 160 VGE = 15V 1.4 140 9V VCE(sat) - Normalized IC - Amperes 4 VCE - Volts VCE - Volts 120 7V 100 80 60 I C = 180A 1.3 1.2 1.1 I C = 90A 1.0 0.9 40 0.8 5V 20 I C = 45A 0.7 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 2.4 -25 VCE - Volts 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 160 4.0 TJ = 25ºC 140 3.5 120 I 2.5 C = 180A 90A 45A IC - Amperes VCE - Volts 3.0 2.0 TJ = 150ºC 25ºC - 40ºC 100 80 60 40 1.5 20 1.0 0 5 6 7 8 9 10 11 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 IXGH90N60B3 Fig. 7. Transconductance Fig. 8. Gate Charge 140 16 TJ = - 40ºC VGE - Volts 125ºC 80 I C = 90A I G = 10 mA 12 25ºC 100 g f s - Siemens VCE = 300V 14 120 60 40 10 8 6 4 20 2 0 0 0 20 40 60 80 100 120 140 0 160 20 40 Fig. 9. Capacitance 80 100 120 140 160 180 Fig. 10. Reverse-Bias Safe Operating Area 100,000 200 f = 1 MHz 180 Cies 10,000 160 140 1,000 IC - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs IC - Amperes Coes 120 100 80 60 100 Cres 40 20 10 0 5 10 15 20 25 30 35 40 0 200 TJ = 125ºC RG = 2Ω dV / dt < 10V / ns 250 300 350 VCE - Volts 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXGH90N60B3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 7.0 8 6.0 --- 5.5 TJ = 125ºC , VGE = 15V 6.0 VCE = 480V 4.5 3.5 4.0 3.0 3.5 2.5 3.0 2.0 I C = 60A 2.5 3 4 5 6 7 8 9 10 11 12 13 14 5 4 2.0 3 1.5 2 1.0 0.0 30 15 40 50 290 2.5 3 2.0 2 1.5 I C = 60A 1 - MilliJoules 4 t f - Nanoseconds 3.0 45 55 65 75 85 95 105 115 280 500 I 400 260 300 C 200 240 0.5 125 100 2 3 4 5 6 td(off) - - - - 300 320 280 300 RG = 2Ω , VGE = 15V 220 TJ = 125ºC 200 150 180 TJ = 25ºC 160 50 0 40 50 60 70 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 80 90 t f - Nanoseconds t f - Nanoseconds 250 30 10 11 12 13 14 15 tf td(off) - - - - 220 RG = 2Ω , VGE = 15V 210 VCE = 480V 260 I C 200 = 90A, 60A 240 190 220 180 200 170 180 160 160 150 140 140 140 120 120 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 130 125 t d(off) - Nanoseconds 240 t d(off) - Nanoseconds 300 100 9 230 280 260 VCE = 480V 200 8 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 450 350 7 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf = 60A 250 TJ - Degrees Centigrade 400 C = 90A 270 I 1.0 0 600 VCE = 480V on 5 td(off) - - - - TJ = 125ºC, VGE = 15V 3.5 I C = 90A 35 700 tf 4.0 E Eoff - MilliJoules ---- RG = 2Ω , VGE = 15V 25 90 t d(off) - Nanoseconds 6 80 300 4.5 VCE = 480V 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 8 Eon 60 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 0.5 TJ = 25ºC RG - Ohms 7 2.5 TJ = 125ºC 0 1.0 2 3.0 1 1.5 2.0 VCE = 480V - MilliJoules 4.0 - MilliJoules 5.0 on Eoff - MilliJoules = 90A 3.5 on C E I ---- RG = 2Ω , VGE = 15V 6 4.5 Eon E 5.5 4.0 Eoff 7 5.0 Eoff - MilliJoules Eon - Eoff 6.5 IXGH90N60B3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 130 td(on) - - - - 90 TJ = 125ºC, VGE = 15V C = 90A 70 90 60 80 I C 50 = 60A 70 40 60 30 50 20 40 10 30 3 4 5 6 7 8 9 10 11 12 13 14 33 RG = 2Ω , VGE = 15V 70 0 2 td(on) - - - - 32 VCE = 480V 60 31 50 30 TJ = 25ºC 40 29 30 28 TJ = 125ºC 20 27 10 26 0 25 30 15 RG - Ohms t d(on) - Nanoseconds I t d(on) - Nanoseconds VCE = 480V 100 34 tr 80 80 t r - Nanoseconds 110 t r - Nanoseconds 90 100 tr 120 35 40 45 50 55 60 65 70 75 80 85 90 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 120 34 tr td(on) - - - - RG = 2Ω , VGE = 15V 100 33 I C = 90A 80 32 60 31 40 I C = 60A 20 30 t d(on) - Nanoseconds t r - Nanoseconds VCE = 480V 29 0 25 35 45 55 65 75 85 95 105 115 28 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_90N60B3(85) 4-24-08