Vishay BAV20WS-V Small signal switching diodes, high voltage Datasheet

BAV19WS-V, BAV20WS-V, BAV21WS-V
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
Features
• Silicon Epitaxial Planar Diodes
• For general purpose
• These diodes are also available in other
case styles including: the DO-35 case with
the type designation BAV19 - BAV21, the
MiniMELF case with the type designation
BAV100 - BAV103, the SOT-23 case with the type
designation BAS19 to BAS21 and the SOD-123
case with the type designation BAV19W-V to
BAV21W-V
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
20145
Mechanical Data
Case: SOD-323
Weight: approx. 5 mg
Packaging Codes/Options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/3K per 7" reel (8 mm tape), 15K/box
Parts Table
Part
Type differentiation
Ordering code
Type Marking
Remarks
BAV19WS-V
VR = 100 V
BAV19WS-V-GS18 or BAV19WS-V-GS08
A8
Tape and reel
BAV20WS-V
VR = 150 V
BAV20WS-V-GS18 or BAV20WS-V-GS08
A9
Tape and reel
BAV21WS-V
VR = 200 V
BAV21WS-V-GS18 or BAV21WS-V-GS08
AA
Tape and reel
Document Number 85726
Rev. 1.5, 26-Nov-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAV19WS-V, BAV20WS-V, BAV21WSVishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Continuous reverse voltage
Repetitive peak reverse voltage
Part
Symbol
Value
Unit
BAV19WS-V
VR
100
V
BAV20WS-V
VR
150
V
BAV21WS-V
VR
200
V
BAV19WS-V
VRRM
120
V
BAV20WS-V
VRRM
200
V
BAV21WS-V
VRRM
250
V
IF
250 1)
mA
IF(AV)
200 1)
mA
mA
Forward continuous current
Rectified current (average) half
wave rectification with resist.
load
Repetitive peak forward current
f ≥ 50 Hz, θ = 180°
IFRM
625 1)
Surge forward current
t < 1 s, Tj = 25 °C
IFSM
1
Ptot
Power dissipation
200
A
1)
mW
Note
1)
Valid provided that leads are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to
ambient air
Symbol
Value
Unit
RthJA
650 1)
K/W
Tj
150 1)
Junction temperature
Tstg
Storage temperature range
- 65 to + 150
°C
1)
°C
Note
1)
Valid provided that leads are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Leakage current
Max.
Unit
IF = 100 mA
VF
1
V
IF = 200 mA
VF
1.25
V
Diode capacitance
Reverse recovery time
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2
Symbol
Min.
Typ.
VR = 100 V
BAV19WS-V
IR
100
nA
VR = 100 V, Tj = 100 °C
BAV19WS-V
IR
15
µA
VR = 150 V
BAV20WS-V
IR
100
nA
VR = 150 V, Tj = 100 °C
BAV20WS-V
IR
15
µA
VR = 200 V
BAV21WS-V
IR
100
nA
BAV21WS-V
IR
15
µA
VR = 200 V, Tj = 100 °C
Dynamic forward resistance
Part
IF = 10 mA
rf
5
Ω
VR = 0, f = 1 MHz
CD
1.5
pF
IF = 30 mA, IR = 30 mA,
iR = 3 mA, RL = 100 Ω
trr
50
ns
For technical questions within your region, please contact one of the following: Document Number 85726
[email protected], [email protected], [email protected]
Rev. 1.5, 26-Nov-10
BAV19WS-V, BAV20WS-V, BAV21WSVishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Tj = 100 °C
100
10
25 °C
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
10
100
IF - Forward Current (mA)
Figure 4. Dynamic Forward Resistance vs. Forward Current
1000
IR(Tj)/IR (25 °C) - Leakage Current
0.3
I O , I F - Admissible Forward Current (A)
1
18861
Figure 1. Forward Current vs. Forward Voltage
0.2
DC current IF
Current (rectif.) I O
0.1
100
10
1
0
0
30
60
90
120
0.1
0
150
Tamb - Ambient Temperature (°C)
18859
Figure 2. Admissible Forward Current vs. Ambient Temperature
18862
250
200
150
100
50
Reverse Voltage
BAV19WS-V VR = 100 V
BAV20WS-V VR = 150 V
BAV21WS-V VR = 200 V
40
80
120
160
Tj - Junction Temperature (°C)
200
Figure 5. Leakage Current vs. Junction Temperature
CD - Diode Capacitance (pF)
Ptot - Admissible Power Dissipation (W)
10
1
VF - Forward Voltage (V)
18858
100
rf - Dynamic Forward Resistance (Ω)
I F - Forward Current (mA)
1000
2.0
1.8
T j = 25 ° C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0
0.1
20 40 60 80 100 120 140 160 180 200
18864
Tamb - Ambient Temperature (°C)
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Document Number 85726
Rev. 1.5, 26-Nov-10
18863
1
10
100
VR - Reverse Voltage (V)
Figure 6. Capacitance vs. Reverse Voltage
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
BAV19WS-V, BAV20WS-V, BAV21WSVishay Semiconductors
0.1 (0.004) max.
0° to 8
°
0.15 (0.006)
0.10 (0.004)
0.2 (0.008)
0.8 (0.031)
1.15 (0.045)
Package Dimensions in millimeters (inches): SOD-323
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
2.50 (0.098)
1.1 (0.043)
2.85 (0.112)
1.5 (0.059)
0.40 (0.016)
0.20 (0.008)
Cathode bar
Foot print recommendation:
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
17443
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4
1.6 (0.063)
0.6 (0.024)
0.6 (0.024)
0.6 (0.024)
For technical questions within your region, please contact one of the following: Document Number 85726
[email protected], [email protected], [email protected]
Rev. 1.5, 26-Nov-10
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www.vishay.com
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Revision: 12-Mar-12
1
Document Number: 91000
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