EC733339
-30V、
、-4.1A P-Channel MOSFET
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high
repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use
in power switching application and a wide variety of other applications.
Features and Benefits:
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Main Product Characteristics:
VDSS
-30V
RDS(on)
37mΩ (typ.)
ID
-4.1A ①
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
-4.1 ①
ID @ TC = 70°C
Continuous Drain Current, VGS @ 10V
-3.5 ①
IDM
Pulsed Drain Current ②
-20
PD @TC = 25°C
Power Dissipation ③
1.4
W
VDS
Drain-Source Voltage
-30
V
VGS
Gate-to-Source Voltage
± 20
V
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to +150
°C
A
Thermal Resistance
Symbol
Characterizes
RθJA
Junction-to-ambient (t ≤ 10s) ④
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
Typ.
Max.
Units
—
90
°C /W
4K27N-Rev.F001
EC733339
-30V、
、-4.1A P-Channel MOSFET
Electrical Characteristics (TA=25℃
℃ unless otherwise noted)
Symbol
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source breakdown voltage
-30
—
—
V
RDS(on)
Static Drain-to-Source on-resistance
—
37
52
—
54
87
-1
—
-3
—
-1.4
—
—
—
-1
—
—
-50
—
—
100
—
—
-100
VGS(th)
IDSS
IGSS
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Qg
Total gate charge
—
17
—
Qgs
Gate-to-Source charge
—
2.5
—
Qgd
Gate-to-Drain("Miller") charge
—
5.0
—
td(on)
Turn-on delay time
—
7.2
—
tr
Rise time
—
4.8
—
td(off)
Turn-Off delay time
—
24
—
tf
Fall time
—
11
—
Ciss
Input capacitance
—
665
—
Coss
Output capacitance
—
108
—
Crss
Reverse transfer capacitance
—
83
—
mΩ
Conditions
VGS = 0V, ID = -250µA
VGS=-10V,ID = -4.1A
VGS=-4.5V,ID = -3A
V
VDS = VGS, ID = -250µA
TJ = 125°C
µA
VDS = -24V,VGS = 0V
TJ = 125°C
nA
VGS =20V
VGS = -20V
ID = -6A,
nC
VDS=-25V,
VGS = -10V
ns
VGS=-10V, VDS =-25V,
RGEN=3Ω，
VGS = 0V,
pF
VDS =-15V,
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
Parameter
Continuous Source Current
Min.
Typ.
Max.
Units
—
—
-4.1 ①
A
(Body Diode)
ISM
Pulsed Source Current
Conditions
MOSFET symbol
showing the
—
—
-20
A
integral reverse
p-n junction diode.
(Body Diode)
VSD
Diode Forward Voltage
—
-0.79
-1.0
V
IS=1A, VGS=0V
trr
Reverse Recovery Time
—
9.7
—
ns
TJ = 25°C, IF =-6A,
Qrr
Reverse Recovery Charge
—
3.8
—
nC
di/dt = 100A/µs
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 6
4K27N-Rev.F001
-30V、
、-4.1A P-Channel MOSFET
EC733339
Test circuits and Waveforms
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 6
4K27N-Rev.F001
-30V、
、-4.1A P-Channel MOSFET
EC733339
Typical electrical and thermal characteristics
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 6
4K27N-Rev.F001
-30V、
、-4.1A P-Channel MOSFET
EC733339
Ordering and Marking Information
EC733339 B1 X
R：
：Tape & Reel
B1＝
＝SOT23 3L
E-CMOS Corp. (www.ecmos.com.tw)
Page 5 of 6
4K27N-Rev.F001
-30V、
、-4.1A P-Channel MOSFET
Part Number
Package
Marking
EC733339B1R
SOT23-3L
3339
EC733339
SOT23-3L Package Outline Dimension
E-CMOS Corp. (www.ecmos.com.tw)
Page 6 of 6
4K27N-Rev.F001